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Vibrational Characteristics of High-Quality MBE Grown GaAs 1−x−y Sb y N x /GaAs (001) Epilayers.

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Title: Vibrational Characteristics of High-Quality MBE Grown GaAs 1−x−y Sb y N x /GaAs (001) Epilayers.
Authors: Talwar, Devki N.1,2 (AUTHOR) devki.talwar@unf.edu, Lin, Hao-Hsiung2,3 (AUTHOR)
Source: Materials (1996-1944). Mar2026, Vol. 19 Issue 5, p923. 20p.
Subjects: Raman spectroscopy, Molecular beam epitaxy, Optoelectronic devices, Phonon-phonon interactions, Gallium arsenide semiconductors, Band gaps, Vibrational spectra
Abstract: The significant disparity between the size and electronegativity of N and group-V (P, As, Sb) atoms in dilute III–V-Ns remains a cornerstone for developing the next-generation electronics. Variations in the structural, optical, and phonon properties of the quaternary GaAs1−x−ySbyNx alloys are being used for improving the high-performance photovoltaic energy and optoelectronic technologies. Bandgap E g tunability has assisted efficient light emission/detection to cover the crucial optical fiber wavelengths for the low-cost integrated chips in data communications and sensing devices. The lattice dynamical properties of these materials are critical for assessing the reliability to evaluate the performance of long-wavelength lasers, photodetectors, and multi-junction solar cells. Our systematic Raman measurements on high-quality MBE grown G a A s 0.946 S b 0.032 N 0.022 /GaAs samples have detected ω T O (Γ) G a A s and ω T O (Γ) G a A s phonons along with a high frequency NAs local mode near ~476 cm−1. Weak phonon structures on both sides of the broad 476 cm−1 band are interpreted forming a complex NAs–Ga–SbAs defect center. Using a realistic rigid-ion model in the Green's function framework, the simulations of impurity modes for isolated and complex defects have provided corroboration to the experimental data. [ABSTRACT FROM AUTHOR]
Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Vibrational Characteristics of High-Quality MBE Grown GaAs 1−x−y Sb y N x /GaAs (001) Epilayers.
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  Data: <searchLink fieldCode="AR" term="%22Talwar%2C+Devki+N%2E%22">Talwar, Devki N.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> devki.talwar@unf.edu</i><br /><searchLink fieldCode="AR" term="%22Lin%2C+Hao-Hsiung%22">Lin, Hao-Hsiung</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. Mar2026, Vol. 19 Issue 5, p923. 20p.
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  Data: <searchLink fieldCode="DE" term="%22Raman+spectroscopy%22">Raman spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronic+devices%22">Optoelectronic devices</searchLink><br /><searchLink fieldCode="DE" term="%22Phonon-phonon+interactions%22">Phonon-phonon interactions</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+arsenide+semiconductors%22">Gallium arsenide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Vibrational+spectra%22">Vibrational spectra</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The significant disparity between the size and electronegativity of N and group-V (P, As, Sb) atoms in dilute III–V-Ns remains a cornerstone for developing the next-generation electronics. Variations in the structural, optical, and phonon properties of the quaternary GaAs1−x−ySbyNx alloys are being used for improving the high-performance photovoltaic energy and optoelectronic technologies. Bandgap E g tunability has assisted efficient light emission/detection to cover the crucial optical fiber wavelengths for the low-cost integrated chips in data communications and sensing devices. The lattice dynamical properties of these materials are critical for assessing the reliability to evaluate the performance of long-wavelength lasers, photodetectors, and multi-junction solar cells. Our systematic Raman measurements on high-quality MBE grown G a A s 0.946 S b 0.032 N 0.022 /GaAs samples have detected ω T O (Γ) G a A s and ω T O (Γ) G a A s phonons along with a high frequency NAs local mode near ~476 cm−1. Weak phonon structures on both sides of the broad 476 cm−1 band are interpreted forming a complex NAs–Ga–SbAs defect center. Using a realistic rigid-ion model in the Green's function framework, the simulations of impurity modes for isolated and complex defects have provided corroboration to the experimental data. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/ma19050923
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        Text: English
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      – SubjectFull: Raman spectroscopy
        Type: general
      – SubjectFull: Molecular beam epitaxy
        Type: general
      – SubjectFull: Optoelectronic devices
        Type: general
      – SubjectFull: Phonon-phonon interactions
        Type: general
      – SubjectFull: Gallium arsenide semiconductors
        Type: general
      – SubjectFull: Band gaps
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      – SubjectFull: Vibrational spectra
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      – TitleFull: Vibrational Characteristics of High-Quality MBE Grown GaAs 1−x−y Sb y N x /GaAs (001) Epilayers.
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            NameFull: Talwar, Devki N.
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            NameFull: Lin, Hao-Hsiung
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              M: 03
              Text: Mar2026
              Type: published
              Y: 2026
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              Value: 19
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