Influence of drying temperature on the pH performance of extended-gate field-effect transistor (EGFET) using sol–gel spin-coated Tio2 on a flexible substrate.
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| Title: | Influence of drying temperature on the pH performance of extended-gate field-effect transistor (EGFET) using sol–gel spin-coated Tio |
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| Authors: | Mahzan, Norhidayatul Hikmee1,2,3 (AUTHOR), Hashim, Shaiful Bakhtiar1,2,3 (AUTHOR), Alip, Rosalena Irma3 (AUTHOR), Khan, Zuhani Ismail4 (AUTHOR), Herman, Sukreen Hana3,4 (AUTHOR) hana1617@uitm.edu.my |
| Source: | Journal of Materials Science: Materials in Electronics. Mar2026, Vol. 37 Issue 9, p1-16. 16p. |
| Abstract: | This work reports the fabrication and characterization of titanium dioxide (TiO₂) thin films deposited on flexible polyethylene naphthalate (PEN) substrates for application as sensing electrodes in extended-gate field-effect transistor (EGFET) pH sensors. The TiO2 films were prepared using a sol–gel spin-coating method and subjected to drying at different temperatures (room temperature, 30, 50, 70, and 100 °C). Structural and compositional analyses using scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX) revealed that moderate thermal treatment enhanced surface uniformity and Ti–O bonding, while excessive heating led to grain growth and compositional shifts. Electrical evaluation of the fabricated devices showed that the TiO2/PEN electrode dried at 50 °C exhibited the best performance, with a sensitivity of 46 mV/pH and a linearity of 0.9986, approaching the theoretical Nernstian response. In contrast, samples dried at higher temperatures demonstrated reduced sensitivity and increased hysteresis, whereas drying at room temperature produced poor structural cohesion. Repeatability and reproducibility tests further confirmed stable and consistent responses, particularly under moderate drying conditions. These findings demonstrate that controlled drying temperature is a critical parameter for optimizing the structural and sensing performance of TiO2-based flexible EGFET electrodes. The results establish TiO2/PEN as a promising platform for reliable, flexible pH sensing, with potential applications in portable and wearable chemical and biomedical monitoring devices. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 192654898 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Influence of drying temperature on the pH performance of extended-gate field-effect transistor (EGFET) using sol–gel spin-coated Tio<subscript>2</subscript> on a flexible substrate. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Mahzan%2C+Norhidayatul+Hikmee%22">Mahzan, Norhidayatul Hikmee</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hashim%2C+Shaiful+Bakhtiar%22">Hashim, Shaiful Bakhtiar</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Alip%2C+Rosalena+Irma%22">Alip, Rosalena Irma</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Khan%2C+Zuhani+Ismail%22">Khan, Zuhani Ismail</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Herman%2C+Sukreen+Hana%22">Herman, Sukreen Hana</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)<i> hana1617@uitm.edu.my</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>. Mar2026, Vol. 37 Issue 9, p1-16. 16p. – Name: Abstract Label: Abstract Group: Ab Data: This work reports the fabrication and characterization of titanium dioxide (TiO₂) thin films deposited on flexible polyethylene naphthalate (PEN) substrates for application as sensing electrodes in extended-gate field-effect transistor (EGFET) pH sensors. The TiO2 films were prepared using a sol–gel spin-coating method and subjected to drying at different temperatures (room temperature, 30, 50, 70, and 100 °C). Structural and compositional analyses using scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX) revealed that moderate thermal treatment enhanced surface uniformity and Ti–O bonding, while excessive heating led to grain growth and compositional shifts. Electrical evaluation of the fabricated devices showed that the TiO2/PEN electrode dried at 50 °C exhibited the best performance, with a sensitivity of 46 mV/pH and a linearity of 0.9986, approaching the theoretical Nernstian response. In contrast, samples dried at higher temperatures demonstrated reduced sensitivity and increased hysteresis, whereas drying at room temperature produced poor structural cohesion. Repeatability and reproducibility tests further confirmed stable and consistent responses, particularly under moderate drying conditions. These findings demonstrate that controlled drying temperature is a critical parameter for optimizing the structural and sensing performance of TiO2-based flexible EGFET electrodes. The results establish TiO2/PEN as a promising platform for reliable, flexible pH sensing, with potential applications in portable and wearable chemical and biomedical monitoring devices. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Materials Science: Materials in Electronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-026-17050-0 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 16 StartPage: 1 Titles: – TitleFull: Influence of drying temperature on the pH performance of extended-gate field-effect transistor (EGFET) using sol–gel spin-coated Tio2 on a flexible substrate. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Mahzan, Norhidayatul Hikmee – PersonEntity: Name: NameFull: Hashim, Shaiful Bakhtiar – PersonEntity: Name: NameFull: Alip, Rosalena Irma – PersonEntity: Name: NameFull: Khan, Zuhani Ismail – PersonEntity: Name: NameFull: Herman, Sukreen Hana IsPartOfRelationships: – BibEntity: Dates: – D: 21 M: 03 Text: Mar2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 37 – Type: issue Value: 9 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
| ResultId | 1 |
