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Layer-dependent electronic, optical, and transport properties of few-layer GeSb2Te4.

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Title: Layer-dependent electronic, optical, and transport properties of few-layer GeSb2Te4.
Authors: Zhang, Chengqi1 (AUTHOR), Wan, Xiaoying1 (AUTHOR), Li, Jiahui1 (AUTHOR), Zhang, Zhaofu2,3 (AUTHOR), Wang, Qingbo1 (AUTHOR), Wang, Hai1 (AUTHOR), Liu, Jun4 (AUTHOR), Zhong, Hongxia1,5 (AUTHOR) busysignal1111@foxmail.com
Source: Journal of Physics D: Applied Physics. 2026, Vol. 59 Issue 13, p1-11. 11p.
Subjects: Phase change memory, Electronic materials, Ab-initio calculations, Two-dimensional materials (Nanotechnology), Optical properties, Transport theory
Abstract: Owing to the pronounced contrast between crystalline and amorphous phases, GeSb 2 Te 4 serves as a key phase change memory material. However, existing studies predominantly focuses on bulk or fixed-thickness thin film structures, with limited investigation into the electronic, optical, and transport properties of low-dimensional systems. Using first-principles calculations, we systematically study the evolution of these properties as a function of layer thickness. We find that as the number of layers increases, the band edge shifts toward the Fermi level, leading to the reduction of the band gap from 0.481 eV in monolayer to 0.120 eV in bulk structure. The work function exhibits a decreasing trend with increasing layer number, showing a substantial tunable range of up to 0.4 eV . Monolayer GeSb 2 Te 4 exhibits strong optical absorption, with a peak absorbance exceeding 40% and absorption coefficients on the order of 10 6 cm − 1 in the visible range, and the optical response can be effectively tuned by varying the number of layers. At room temperature, bilayer GeSb 2 Te 4 achieves a total mobility of 30 cm 2 (V ⋅ s) − 1 , showing significantly improved carrier transport compared to the monolayer structure. This study elucidates the evolution of key properties of GeSb 2 Te 4 with varying layer thickness and provides theoretical insights for the further optimization of phase-change materials in memory applications. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Physics D: Applied Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 192699101
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Layer-dependent electronic, optical, and transport properties of few-layer GeSb<subscript>2</subscript>Te<subscript>4</subscript>.
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  Data: <searchLink fieldCode="AR" term="%22Zhang%2C+Chengqi%22">Zhang, Chengqi</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wan%2C+Xiaoying%22">Wan, Xiaoying</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Jiahui%22">Li, Jiahui</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Zhaofu%22">Zhang, Zhaofu</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Qingbo%22">Wang, Qingbo</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Hai%22">Wang, Hai</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Jun%22">Liu, Jun</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhong%2C+Hongxia%22">Zhong, Hongxia</searchLink><relatesTo>1,5</relatesTo> (AUTHOR)<i> busysignal1111@foxmail.com</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Physics+D%3A+Applied+Physics%22">Journal of Physics D: Applied Physics</searchLink>. 2026, Vol. 59 Issue 13, p1-11. 11p.
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  Data: <searchLink fieldCode="DE" term="%22Phase+change+memory%22">Phase change memory</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+materials%22">Electronic materials</searchLink><br /><searchLink fieldCode="DE" term="%22Ab-initio+calculations%22">Ab-initio calculations</searchLink><br /><searchLink fieldCode="DE" term="%22Two-dimensional+materials+%28Nanotechnology%29%22">Two-dimensional materials (Nanotechnology)</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+properties%22">Optical properties</searchLink><br /><searchLink fieldCode="DE" term="%22Transport+theory%22">Transport theory</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Owing to the pronounced contrast between crystalline and amorphous phases, GeSb 2 Te 4 serves as a key phase change memory material. However, existing studies predominantly focuses on bulk or fixed-thickness thin film structures, with limited investigation into the electronic, optical, and transport properties of low-dimensional systems. Using first-principles calculations, we systematically study the evolution of these properties as a function of layer thickness. We find that as the number of layers increases, the band edge shifts toward the Fermi level, leading to the reduction of the band gap from 0.481 eV in monolayer to 0.120 eV in bulk structure. The work function exhibits a decreasing trend with increasing layer number, showing a substantial tunable range of up to 0.4 eV . Monolayer GeSb 2 Te 4 exhibits strong optical absorption, with a peak absorbance exceeding 40% and absorption coefficients on the order of 10 6 cm − 1 in the visible range, and the optical response can be effectively tuned by varying the number of layers. At room temperature, bilayer GeSb 2 Te 4 achieves a total mobility of 30 cm 2 (V ⋅ s) − 1 , showing significantly improved carrier transport compared to the monolayer structure. This study elucidates the evolution of key properties of GeSb 2 Te 4 with varying layer thickness and provides theoretical insights for the further optimization of phase-change materials in memory applications. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Physics D: Applied Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1088/1361-6463/ae4fd4
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        Text: English
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        PageCount: 11
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      – SubjectFull: Phase change memory
        Type: general
      – SubjectFull: Electronic materials
        Type: general
      – SubjectFull: Ab-initio calculations
        Type: general
      – SubjectFull: Two-dimensional materials (Nanotechnology)
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      – SubjectFull: Optical properties
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      – SubjectFull: Transport theory
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      – TitleFull: Layer-dependent electronic, optical, and transport properties of few-layer GeSb2Te4.
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            NameFull: Zhang, Chengqi
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            NameFull: Wan, Xiaoying
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            – D: 03
              M: 04
              Text: 2026
              Type: published
              Y: 2026
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