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Improved Uniformity in Glass TSV Filling by Asymmetric Dwell Pulsed Potential Deposition.

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Title: Improved Uniformity in Glass TSV Filling by Asymmetric Dwell Pulsed Potential Deposition.
Authors: Kim, Youjung1,2 (AUTHOR), Shim, Eunsoo1,3 (AUTHOR), Park, Ji Young1,4 (AUTHOR), Weimer, Matthew S.5 (AUTHOR), Harris, Sara5 (AUTHOR), Raciti, David1 (AUTHOR), Yoo, Bongyoung2 (AUTHOR), Lim, Jae-Hong3 (AUTHOR), Choa, Yong-Ho2 (AUTHOR), Moffat, Thomas P.1 (AUTHOR), Josell, Daniel1 (AUTHOR) daniel.josell@nist.gov
Source: Journal of The Electrochemical Society. 2026, Vol. 173 Issue 7, p1-11. 11p.
Subjects: Copper plating, Electroplating, Cyclic voltammetry, Additives, Electrochemical analysis, Copper sulfate
Abstract: Filling of through vias in glass interposers is explored using an acid copper sulfate electrolyte containing dilute chloride and a polyether suppressor additive. Cyclic voltammetry with a rotating disk electrode shows that suppression breakdown and hysteresis is associated with an S-shaped negative differential resistance (S-NDR). Feature filling experiments at potentials within the hysteretic potential range yield localized deposition that initiates and advances from the center of the through vias to enable void-free Cu filling. Challenges with filling uniformity across the interposer workpiece are addressed using an asymmetric pulsed potential approach to periodically reinforce active growth on the most recessed surface regions. The activation and deposition potentials are selected based on voltammetry and the S-NDR filling mechanism while accounting for distributed ohmic losses due to uncompensated electrolyte and contact resistances. [ABSTRACT FROM AUTHOR]
Copyright of Journal of The Electrochemical Society is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 192724562
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Improved Uniformity in Glass TSV Filling by Asymmetric Dwell Pulsed Potential Deposition.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+The+Electrochemical+Society%22">Journal of The Electrochemical Society</searchLink>. 2026, Vol. 173 Issue 7, p1-11. 11p.
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  Data: <searchLink fieldCode="DE" term="%22Copper+plating%22">Copper plating</searchLink><br /><searchLink fieldCode="DE" term="%22Electroplating%22">Electroplating</searchLink><br /><searchLink fieldCode="DE" term="%22Cyclic+voltammetry%22">Cyclic voltammetry</searchLink><br /><searchLink fieldCode="DE" term="%22Additives%22">Additives</searchLink><br /><searchLink fieldCode="DE" term="%22Electrochemical+analysis%22">Electrochemical analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Copper+sulfate%22">Copper sulfate</searchLink>
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  Data: Filling of through vias in glass interposers is explored using an acid copper sulfate electrolyte containing dilute chloride and a polyether suppressor additive. Cyclic voltammetry with a rotating disk electrode shows that suppression breakdown and hysteresis is associated with an S-shaped negative differential resistance (S-NDR). Feature filling experiments at potentials within the hysteretic potential range yield localized deposition that initiates and advances from the center of the through vias to enable void-free Cu filling. Challenges with filling uniformity across the interposer workpiece are addressed using an asymmetric pulsed potential approach to periodically reinforce active growth on the most recessed surface regions. The activation and deposition potentials are selected based on voltammetry and the S-NDR filling mechanism while accounting for distributed ohmic losses due to uncompensated electrolyte and contact resistances. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of The Electrochemical Society is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1149/1945-7111/ae53bb
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      – Code: eng
        Text: English
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        PageCount: 11
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    Subjects:
      – SubjectFull: Copper plating
        Type: general
      – SubjectFull: Electroplating
        Type: general
      – SubjectFull: Cyclic voltammetry
        Type: general
      – SubjectFull: Additives
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      – SubjectFull: Electrochemical analysis
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      – SubjectFull: Copper sulfate
        Type: general
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      – TitleFull: Improved Uniformity in Glass TSV Filling by Asymmetric Dwell Pulsed Potential Deposition.
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              Text: 2026
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