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Modeling for the Hybrid Schottky Junction: MXene/MAPbI3.

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Title: Modeling for the Hybrid Schottky Junction: MXene/MAPbI3.
Authors: Tseng, Ming-Lang1,2,3,4 (AUTHOR), Ismail, Emad A. A.5 (AUTHOR), Gorji, Nima E.6 (AUTHOR) nima.s.gorji@gmail.com, Awwad, Fuad A.5 (AUTHOR) fawwad@ksu.edu.sa
Source: Journal of Electronic Materials. May2026, Vol. 55 Issue 5, p4713-4721. 9p.
Subjects: Schottky barrier, Thermionic emission, Two-dimensional materials (Nanotechnology), Capacitance-voltage characteristics, Surface states, Equivalent electric circuits
Abstract: A hybrid MXene/MAPbI3 Schottky junction was fabricated and systematically investigated through temperature-dependent current–voltage (I–V) and capacitance–voltage (C–V) analysis in the temperature range of 280–310 K. The device structure and energy band alignment at the MXene/MAPbI3 interface confirm the formation of a rectifying Schottky barrier. Analysis of the forward-bias I–V characteristics reveals thermally activated carrier transport governed by thermionic emission, with an effective barrier height that decreases linearly with temperature. The extracted temperature coefficient of the barrier height is βφ ≈ 4.3 × 10−4 eV K−1, indicating significant interface-state contributions to the transport process. Log–log I–V characteristics exhibit a power-law dependence (I ∝ Vᵐ), with the exponent m decreasing with increasing temperature, consistent with trap-controlled space-charge-limited conduction at low bias and enhanced carrier injection at elevated temperatures. Reverse-bias currents increase monotonically with temperature, further supporting thermally assisted emission over the Schottky barrier. High-frequency C–V analysis shows pronounced frequency dispersion in the Mott–Schottky plots, confirming the presence of interface states at the MXene/MAPbI3 junction. Corrected capacitance analysis yields a built-in voltage of approximately 0.7 V and a donor concentration of ~7.6 × 1014 cm−3. A direct current (DC) and high-frequency equivalent circuit model is proposed, incorporating depletion resistance, MXene sheet resistance, series resistance, and junction capacitance, which accurately describes both the DC transport and alternating current (AC) response of the hybrid Schottky device. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 192873926
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PubTypeId: academicJournal
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  Label: Title
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  Data: Modeling for the Hybrid Schottky Junction: MXene/MAPbI<subscript>3</subscript>.
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  Data: <searchLink fieldCode="AR" term="%22Tseng%2C+Ming-Lang%22">Tseng, Ming-Lang</searchLink><relatesTo>1,2,3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ismail%2C+Emad+A%2E+A%2E%22">Ismail, Emad A. A.</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gorji%2C+Nima+E%2E%22">Gorji, Nima E.</searchLink><relatesTo>6</relatesTo> (AUTHOR)<i> nima.s.gorji@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Awwad%2C+Fuad+A%2E%22">Awwad, Fuad A.</searchLink><relatesTo>5</relatesTo> (AUTHOR)<i> fawwad@ksu.edu.sa</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. May2026, Vol. 55 Issue 5, p4713-4721. 9p.
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  Data: <searchLink fieldCode="DE" term="%22Schottky+barrier%22">Schottky barrier</searchLink><br /><searchLink fieldCode="DE" term="%22Thermionic+emission%22">Thermionic emission</searchLink><br /><searchLink fieldCode="DE" term="%22Two-dimensional+materials+%28Nanotechnology%29%22">Two-dimensional materials (Nanotechnology)</searchLink><br /><searchLink fieldCode="DE" term="%22Capacitance-voltage+characteristics%22">Capacitance-voltage characteristics</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+states%22">Surface states</searchLink><br /><searchLink fieldCode="DE" term="%22Equivalent+electric+circuits%22">Equivalent electric circuits</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: A hybrid MXene/MAPbI3 Schottky junction was fabricated and systematically investigated through temperature-dependent current–voltage (I–V) and capacitance–voltage (C–V) analysis in the temperature range of 280–310 K. The device structure and energy band alignment at the MXene/MAPbI3 interface confirm the formation of a rectifying Schottky barrier. Analysis of the forward-bias I–V characteristics reveals thermally activated carrier transport governed by thermionic emission, with an effective barrier height that decreases linearly with temperature. The extracted temperature coefficient of the barrier height is βφ ≈ 4.3 × 10−4 eV K−1, indicating significant interface-state contributions to the transport process. Log–log I–V characteristics exhibit a power-law dependence (I ∝ Vᵐ), with the exponent m decreasing with increasing temperature, consistent with trap-controlled space-charge-limited conduction at low bias and enhanced carrier injection at elevated temperatures. Reverse-bias currents increase monotonically with temperature, further supporting thermally assisted emission over the Schottky barrier. High-frequency C–V analysis shows pronounced frequency dispersion in the Mott–Schottky plots, confirming the presence of interface states at the MXene/MAPbI3 junction. Corrected capacitance analysis yields a built-in voltage of approximately 0.7 V and a donor concentration of ~7.6 × 1014 cm−3. A direct current (DC) and high-frequency equivalent circuit model is proposed, incorporating depletion resistance, MXene sheet resistance, series resistance, and junction capacitance, which accurately describes both the DC transport and alternating current (AC) response of the hybrid Schottky device. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1007/s11664-026-12763-8
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 4713
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      – SubjectFull: Schottky barrier
        Type: general
      – SubjectFull: Thermionic emission
        Type: general
      – SubjectFull: Two-dimensional materials (Nanotechnology)
        Type: general
      – SubjectFull: Capacitance-voltage characteristics
        Type: general
      – SubjectFull: Surface states
        Type: general
      – SubjectFull: Equivalent electric circuits
        Type: general
    Titles:
      – TitleFull: Modeling for the Hybrid Schottky Junction: MXene/MAPbI3.
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            NameFull: Tseng, Ming-Lang
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            NameFull: Ismail, Emad A. A.
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            NameFull: Gorji, Nima E.
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            – D: 01
              M: 05
              Text: May2026
              Type: published
              Y: 2026
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