View in EDS HTML Full Text PDF Full Text

Controllable Growth of Ordered In-Plane Ge Hut Wires on Trench-Patterned Si Substrate.

Saved in:
Bibliographic Details
Title: Controllable Growth of Ordered In-Plane Ge Hut Wires on Trench-Patterned Si Substrate.
Authors: Gao, Fei1,2 (AUTHOR) gaofei@qlit.edu.cn, Ming, Ming2 (AUTHOR), Zhang, Jie-Yin2,3 (AUTHOR), Zhang, Jian-Jun1,2 (AUTHOR)
Source: Nanomaterials (2079-4991). Apr2026, Vol. 16 Issue 7, p423. 8p.
Subjects: Synthesis of nanowires, Molecular beam epitaxy, Quantum electronics, Nanowires, Qubits, Substrates (Materials science), Buffer layers
Abstract: The controllable growth of in-plane Ge nanowires provides alternative material foundations for the scalability of Ge-based semiconductor qubit devices. Here, ordered in-plane Ge hut wires with controllable size are grown on the trench-patterned Si substrate by molecular beam epitaxy. By tuning the thickness of the SiGe alloy layer, which acts as strain buffered layer, GeSi mounds with controllable size are achieved. Subsequently, through the deposition of a Ge layer followed by in situ annealing, we realize the size-controllable growth of the Ge nanowire with a height from 1.8 nm to 4.0 nm, as characterized by AFM and TEM techniques. These size-tunable and catalyst-free Ge hut wires provide a promising pathway toward the fabrication of integrated nanowire-based quantum devices. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: egs
DbLabel: Engineering Source
An: 192960266
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Controllable Growth of Ordered In-Plane Ge Hut Wires on Trench-Patterned Si Substrate.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Gao%2C+Fei%22">Gao, Fei</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> gaofei@qlit.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Ming%2C+Ming%22">Ming, Ming</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Jie-Yin%22">Zhang, Jie-Yin</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Jian-Jun%22">Zhang, Jian-Jun</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Apr2026, Vol. 16 Issue 7, p423. 8p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Synthesis+of+nanowires%22">Synthesis of nanowires</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+electronics%22">Quantum electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Nanowires%22">Nanowires</searchLink><br /><searchLink fieldCode="DE" term="%22Qubits%22">Qubits</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Buffer+layers%22">Buffer layers</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The controllable growth of in-plane Ge nanowires provides alternative material foundations for the scalability of Ge-based semiconductor qubit devices. Here, ordered in-plane Ge hut wires with controllable size are grown on the trench-patterned Si substrate by molecular beam epitaxy. By tuning the thickness of the SiGe alloy layer, which acts as strain buffered layer, GeSi mounds with controllable size are achieved. Subsequently, through the deposition of a Ge layer followed by in situ annealing, we realize the size-controllable growth of the Ge nanowire with a height from 1.8 nm to 4.0 nm, as characterized by AFM and TEM techniques. These size-tunable and catalyst-free Ge hut wires provide a promising pathway toward the fabrication of integrated nanowire-based quantum devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=192960266
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3390/nano16070423
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 423
    Subjects:
      – SubjectFull: Synthesis of nanowires
        Type: general
      – SubjectFull: Molecular beam epitaxy
        Type: general
      – SubjectFull: Quantum electronics
        Type: general
      – SubjectFull: Nanowires
        Type: general
      – SubjectFull: Qubits
        Type: general
      – SubjectFull: Substrates (Materials science)
        Type: general
      – SubjectFull: Buffer layers
        Type: general
    Titles:
      – TitleFull: Controllable Growth of Ordered In-Plane Ge Hut Wires on Trench-Patterned Si Substrate.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Gao, Fei
      – PersonEntity:
          Name:
            NameFull: Ming, Ming
      – PersonEntity:
          Name:
            NameFull: Zhang, Jie-Yin
      – PersonEntity:
          Name:
            NameFull: Zhang, Jian-Jun
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 04
              Text: Apr2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 20794991
          Numbering:
            – Type: volume
              Value: 16
            – Type: issue
              Value: 7
          Titles:
            – TitleFull: Nanomaterials (2079-4991)
              Type: main
ResultId 1