View in EDS HTML Full Text PDF Full Text

High Electron Mobility in Ge Films Grown on Si (001) by an 8-Inch Molecular Beam Epitaxy System.

Saved in:
Bibliographic Details
Title: High Electron Mobility in Ge Films Grown on Si (001) by an 8-Inch Molecular Beam Epitaxy System.
Authors: Ye, Gancheng1 (AUTHOR), Zhang, Jieyin2,3 (AUTHOR), Chen, Yilin2,3,4 (AUTHOR), Ming, Ming2,3,4 (AUTHOR), Liao, Liangxin1,2 (AUTHOR), Geng, Xin2 (AUTHOR), Zhang, Xinding1,3 (AUTHOR), Zhang, Jianjun2,3,4 (AUTHOR)
Source: Nanomaterials (2079-4991). Apr2026, Vol. 16 Issue 7, p424. 8p.
Subjects: Electron mobility, Molecular beam epitaxy, Hall effect, Carrier density, Dislocation structure, Silicon wafers, Germanium films
Abstract: Silicon-based germanium films are promising for the fabrication of low-power, high-performance electronic and optoelectronic devices. In this work, we report an effective approach for directly growing Ge films with ultrahigh carrier mobility on Si (001) substrates using molecular beam epitaxy (MBE). Strain relaxation of the germanium films is realized through the formation of partial dislocations and 90° misfit dislocations at the Ge/Si interface. The Ge film exhibits a smooth surface with a root-mean-square roughness of 0.187 nm and a low threading dislocation density of only 1.2 × 107 cm−2. Hall effect measurements reveal a high room-temperature mobility of up to 1916 cm2V−1s−1 along with a carrier concentration of 1.425 × 1016 cm−3. These findings demonstrate that MBE-grown Ge films, possessing exceptionally high carrier mobility, hold great promise for integration into advanced electronic and optoelectronic devices. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: egs
DbLabel: Engineering Source
An: 192960267
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: High Electron Mobility in Ge Films Grown on Si (001) by an 8-Inch Molecular Beam Epitaxy System.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Ye%2C+Gancheng%22">Ye, Gancheng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Jieyin%22">Zhang, Jieyin</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Yilin%22">Chen, Yilin</searchLink><relatesTo>2,3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ming%2C+Ming%22">Ming, Ming</searchLink><relatesTo>2,3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liao%2C+Liangxin%22">Liao, Liangxin</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Geng%2C+Xin%22">Geng, Xin</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Xinding%22">Zhang, Xinding</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Jianjun%22">Zhang, Jianjun</searchLink><relatesTo>2,3,4</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Apr2026, Vol. 16 Issue 7, p424. 8p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Electron+mobility%22">Electron mobility</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Hall+effect%22">Hall effect</searchLink><br /><searchLink fieldCode="DE" term="%22Carrier+density%22">Carrier density</searchLink><br /><searchLink fieldCode="DE" term="%22Dislocation+structure%22">Dislocation structure</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+wafers%22">Silicon wafers</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium+films%22">Germanium films</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Silicon-based germanium films are promising for the fabrication of low-power, high-performance electronic and optoelectronic devices. In this work, we report an effective approach for directly growing Ge films with ultrahigh carrier mobility on Si (001) substrates using molecular beam epitaxy (MBE). Strain relaxation of the germanium films is realized through the formation of partial dislocations and 90° misfit dislocations at the Ge/Si interface. The Ge film exhibits a smooth surface with a root-mean-square roughness of 0.187 nm and a low threading dislocation density of only 1.2 × 107 cm−2. Hall effect measurements reveal a high room-temperature mobility of up to 1916 cm2V−1s−1 along with a carrier concentration of 1.425 × 1016 cm−3. These findings demonstrate that MBE-grown Ge films, possessing exceptionally high carrier mobility, hold great promise for integration into advanced electronic and optoelectronic devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=192960267
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3390/nano16070424
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 424
    Subjects:
      – SubjectFull: Electron mobility
        Type: general
      – SubjectFull: Molecular beam epitaxy
        Type: general
      – SubjectFull: Hall effect
        Type: general
      – SubjectFull: Carrier density
        Type: general
      – SubjectFull: Dislocation structure
        Type: general
      – SubjectFull: Silicon wafers
        Type: general
      – SubjectFull: Germanium films
        Type: general
    Titles:
      – TitleFull: High Electron Mobility in Ge Films Grown on Si (001) by an 8-Inch Molecular Beam Epitaxy System.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Ye, Gancheng
      – PersonEntity:
          Name:
            NameFull: Zhang, Jieyin
      – PersonEntity:
          Name:
            NameFull: Chen, Yilin
      – PersonEntity:
          Name:
            NameFull: Ming, Ming
      – PersonEntity:
          Name:
            NameFull: Liao, Liangxin
      – PersonEntity:
          Name:
            NameFull: Geng, Xin
      – PersonEntity:
          Name:
            NameFull: Zhang, Xinding
      – PersonEntity:
          Name:
            NameFull: Zhang, Jianjun
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 04
              Text: Apr2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 20794991
          Numbering:
            – Type: volume
              Value: 16
            – Type: issue
              Value: 7
          Titles:
            – TitleFull: Nanomaterials (2079-4991)
              Type: main
ResultId 1