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Band alignment of wide-bandgap BeO epitaxially grown on α-Ga2O3.

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Title: Band alignment of wide-bandgap BeO epitaxially grown on α-Ga2O3.
Authors: Bae, Jonghyun1 (AUTHOR), Jung, Dohwan1 (AUTHOR), Jang, Yoonseo1 (AUTHOR), Han, Sangoh1 (AUTHOR), Bong, Haekyun1 (AUTHOR), Kim, Hyeong-Yun2 (AUTHOR), Park, Ji-Hyeon2 (AUTHOR), Jeon, Dae-Woo2 (AUTHOR), Sultane, Prakash R.3 (AUTHOR), Bielawski, Christopher W.3,4 (AUTHOR), Ryou, Jae-Hyun5,6,7 (AUTHOR), Oh, Jungwoo1 (AUTHOR) jungwoo.oh@yonsei.ac.kr
Source: Ceramics International. May2026:Part B, Vol. 52 Issue 11, p17732-17738. 7p.
Subjects: Epitaxy, Conduction bands, Electronic band structure, Wide gap semiconductors, Atomic layer deposition, Thermal conductivity, Power electronics, Semiconductors
Abstract: The development of next-generation power electronics demands ultrawide-bandgap semiconductors that can operate under extreme conditions. While α-phase gallium oxide (α-Ga 2 O 3) exhibits exceptional properties, its practical application is hindered by intrinsically low thermal conductivity (8.0–11.6 W/m·K) and limited conduction band offsets (CBOs) with conventional dielectrics. In this study, we demonstrate the successful epitaxial growth of beryllium oxide (BeO) on α-Ga 2 O 3 using plasma-enhanced atomic layer deposition, which provides a large CBO and suggests potential advantages in interfacial thermal properties due to the high thermal conductivity of BeO. Structural analyses using transmission electron microscopy and X-ray diffraction verified that BeO grew as a single crystal with atomically sharp interfaces, enabled by hexagonal symmetry matching. Furthermore, the band alignment was identified as type-I, with a CBO of 2.7 eV. These results indicate that BeO is a promising dielectric for α-Ga 2 O 3 devices. [ABSTRACT FROM AUTHOR]
Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 193008235
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  Data: Band alignment of wide-bandgap BeO epitaxially grown on α-Ga2O3.
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  Data: <searchLink fieldCode="AR" term="%22Bae%2C+Jonghyun%22">Bae, Jonghyun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jung%2C+Dohwan%22">Jung, Dohwan</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jang%2C+Yoonseo%22">Jang, Yoonseo</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Han%2C+Sangoh%22">Han, Sangoh</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bong%2C+Haekyun%22">Bong, Haekyun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kim%2C+Hyeong-Yun%22">Kim, Hyeong-Yun</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Park%2C+Ji-Hyeon%22">Park, Ji-Hyeon</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jeon%2C+Dae-Woo%22">Jeon, Dae-Woo</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Sultane%2C+Prakash+R%2E%22">Sultane, Prakash R.</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bielawski%2C+Christopher+W%2E%22">Bielawski, Christopher W.</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ryou%2C+Jae-Hyun%22">Ryou, Jae-Hyun</searchLink><relatesTo>5,6,7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Oh%2C+Jungwoo%22">Oh, Jungwoo</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> jungwoo.oh@yonsei.ac.kr</i>
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  Data: <searchLink fieldCode="JN" term="%22Ceramics+International%22">Ceramics International</searchLink>. May2026:Part B, Vol. 52 Issue 11, p17732-17738. 7p.
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  Data: <searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Conduction+bands%22">Conduction bands</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+band+structure%22">Electronic band structure</searchLink><br /><searchLink fieldCode="DE" term="%22Wide+gap+semiconductors%22">Wide gap semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+layer+deposition%22">Atomic layer deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+conductivity%22">Thermal conductivity</searchLink><br /><searchLink fieldCode="DE" term="%22Power+electronics%22">Power electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The development of next-generation power electronics demands ultrawide-bandgap semiconductors that can operate under extreme conditions. While α-phase gallium oxide (α-Ga 2 O 3) exhibits exceptional properties, its practical application is hindered by intrinsically low thermal conductivity (8.0–11.6 W/m·K) and limited conduction band offsets (CBOs) with conventional dielectrics. In this study, we demonstrate the successful epitaxial growth of beryllium oxide (BeO) on α-Ga 2 O 3 using plasma-enhanced atomic layer deposition, which provides a large CBO and suggests potential advantages in interfacial thermal properties due to the high thermal conductivity of BeO. Structural analyses using transmission electron microscopy and X-ray diffraction verified that BeO grew as a single crystal with atomically sharp interfaces, enabled by hexagonal symmetry matching. Furthermore, the band alignment was identified as type-I, with a CBO of 2.7 eV. These results indicate that BeO is a promising dielectric for α-Ga 2 O 3 devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.ceramint.2026.02.354
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 17732
    Subjects:
      – SubjectFull: Epitaxy
        Type: general
      – SubjectFull: Conduction bands
        Type: general
      – SubjectFull: Electronic band structure
        Type: general
      – SubjectFull: Wide gap semiconductors
        Type: general
      – SubjectFull: Atomic layer deposition
        Type: general
      – SubjectFull: Thermal conductivity
        Type: general
      – SubjectFull: Power electronics
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      – SubjectFull: Semiconductors
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      – TitleFull: Band alignment of wide-bandgap BeO epitaxially grown on α-Ga2O3.
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              M: 05
              Text: May2026:Part B
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              Y: 2026
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