Band alignment of wide-bandgap BeO epitaxially grown on α-Ga2O3.
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| Title: | Band alignment of wide-bandgap BeO epitaxially grown on α-Ga2O3. |
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| Authors: | Bae, Jonghyun1 (AUTHOR), Jung, Dohwan1 (AUTHOR), Jang, Yoonseo1 (AUTHOR), Han, Sangoh1 (AUTHOR), Bong, Haekyun1 (AUTHOR), Kim, Hyeong-Yun2 (AUTHOR), Park, Ji-Hyeon2 (AUTHOR), Jeon, Dae-Woo2 (AUTHOR), Sultane, Prakash R.3 (AUTHOR), Bielawski, Christopher W.3,4 (AUTHOR), Ryou, Jae-Hyun5,6,7 (AUTHOR), Oh, Jungwoo1 (AUTHOR) jungwoo.oh@yonsei.ac.kr |
| Source: | Ceramics International. May2026:Part B, Vol. 52 Issue 11, p17732-17738. 7p. |
| Subjects: | Epitaxy, Conduction bands, Electronic band structure, Wide gap semiconductors, Atomic layer deposition, Thermal conductivity, Power electronics, Semiconductors |
| Abstract: | The development of next-generation power electronics demands ultrawide-bandgap semiconductors that can operate under extreme conditions. While α-phase gallium oxide (α-Ga 2 O 3) exhibits exceptional properties, its practical application is hindered by intrinsically low thermal conductivity (8.0–11.6 W/m·K) and limited conduction band offsets (CBOs) with conventional dielectrics. In this study, we demonstrate the successful epitaxial growth of beryllium oxide (BeO) on α-Ga 2 O 3 using plasma-enhanced atomic layer deposition, which provides a large CBO and suggests potential advantages in interfacial thermal properties due to the high thermal conductivity of BeO. Structural analyses using transmission electron microscopy and X-ray diffraction verified that BeO grew as a single crystal with atomically sharp interfaces, enabled by hexagonal symmetry matching. Furthermore, the band alignment was identified as type-I, with a CBO of 2.7 eV. These results indicate that BeO is a promising dielectric for α-Ga 2 O 3 devices. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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