DELAMINATION TEST AND THE EFFECT OF FREE EDGE ON INTERFACE STRENGTH OF PZT THIN FILMS.
Saved in:
| Title: | DELAMINATION TEST AND THE EFFECT OF FREE EDGE ON INTERFACE STRENGTH OF PZT THIN FILMS. |
|---|---|
| Authors: | Shang, F.1,2 shang@cyber.kues.kyotou.ac.jp, Kitamura, T.1, Hirakata, H.1 |
| Source: | Integrated Ferroelectrics. 2005, Vol. 73 Issue 1, p67-74. 8p. 1 Diagram, 2 Charts, 2 Graphs. |
| Subjects: | Thin films, Solid state electronics, Solid state physics, Ferroelectric devices, Silicon, Nonmetals |
| Abstract: | This paper studies the interfacial delamination resistance for weak interface between piezoelectric PZT and metallic Cr thin films deposited on silicon substrate. An experimental technique using sandwiched cantilever type specimen was developed to measure the mechanical strength of the interface in thin film structures. To understand the experimental data obtained, we proposed two delamination criteria for crack initiation that are based on stress intensity concept and cohesive zone model, which accordingly provided two parameters that describe the resistance to the interfacial delamination, i.e., stress intensity factor K d and the work of interface separation per unit area Γ 0 , respectively. [ABSTRACT FROM AUTHOR] |
| Copyright of Integrated Ferroelectrics is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
|---|---|
| Header | DbId: egs DbLabel: Engineering Source An: 19302957 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: DELAMINATION TEST AND THE EFFECT OF FREE EDGE ON INTERFACE STRENGTH OF PZT THIN FILMS. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Shang%2C+F%2E%22">Shang, F.</searchLink><relatesTo>1,2</relatesTo><i> shang@cyber.kues.kyotou.ac.jp</i><br /><searchLink fieldCode="AR" term="%22Kitamura%2C+T%2E%22">Kitamura, T.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hirakata%2C+H%2E%22">Hirakata, H.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Integrated+Ferroelectrics%22">Integrated Ferroelectrics</searchLink>. 2005, Vol. 73 Issue 1, p67-74. 8p. 1 Diagram, 2 Charts, 2 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Solid+state+electronics%22">Solid state electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Solid+state+physics%22">Solid state physics</searchLink><br /><searchLink fieldCode="DE" term="%22Ferroelectric+devices%22">Ferroelectric devices</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Nonmetals%22">Nonmetals</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: This paper studies the interfacial delamination resistance for weak interface between piezoelectric PZT and metallic Cr thin films deposited on silicon substrate. An experimental technique using sandwiched cantilever type specimen was developed to measure the mechanical strength of the interface in thin film structures. To understand the experimental data obtained, we proposed two delamination criteria for crack initiation that are based on stress intensity concept and cohesive zone model, which accordingly provided two parameters that describe the resistance to the interfacial delamination, i.e., stress intensity factor K d and the work of interface separation per unit area Γ 0 , respectively. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Integrated Ferroelectrics is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=19302957 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1080/10584580500413673 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 67 Subjects: – SubjectFull: Thin films Type: general – SubjectFull: Solid state electronics Type: general – SubjectFull: Solid state physics Type: general – SubjectFull: Ferroelectric devices Type: general – SubjectFull: Silicon Type: general – SubjectFull: Nonmetals Type: general Titles: – TitleFull: DELAMINATION TEST AND THE EFFECT OF FREE EDGE ON INTERFACE STRENGTH OF PZT THIN FILMS. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Shang, F. – PersonEntity: Name: NameFull: Kitamura, T. – PersonEntity: Name: NameFull: Hirakata, H. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: 2005 Type: published Y: 2005 Identifiers: – Type: issn-print Value: 10584587 Numbering: – Type: volume Value: 73 – Type: issue Value: 1 Titles: – TitleFull: Integrated Ferroelectrics Type: main |
| ResultId | 1 |
