Formation of Ordered Arrays of Defect‐Free GaAs Nanocrystals on Si(100) Substrates.
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| Title: | Formation of Ordered Arrays of Defect‐Free GaAs Nanocrystals on Si(100) Substrates. |
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| Authors: | Savelyev, Igor1 (AUTHOR) igor.saveliev@utoronto.ca, Mitchell, William2 (AUTHOR), Ruda, Harry1 (AUTHOR), Bernier, Eric3 (AUTHOR), Boyko, Alena1 (AUTHOR), Souza, Christina1 (AUTHOR), Habib, Mohammad Rezwan (AUTHOR) mohabib@wiley.com |
| Source: | Advances in Materials Science & Engineering. 4/18/2026, Vol. 2026, p1-9. 9p. |
| Subjects: | Molecular beam epitaxy, Epitaxy, Nanocrystals, Silicon wafers, Semiconductor nanocrystals, Transmission electron microscopy, Nanopatterning, Nucleation |
| Abstract: | The conditions for selected area molecular beam epitaxial growth of GaAs nanoscale crystals on Si(100) were studied. Growth was confined to arrays of nanometer‐sized pores patterned in a SiO2 mask that provided exposure to the Si surface underneath. A model was developed to describe the growth process based on the probability of adatoms forming stable nuclei on the SiO2/Si surface. This model was applied to the growth of well‐ordered arrays of GaAs nanocrystals with dimensions as small as 20 nm. High‐resolution transmission electron microscopy imaging and Fourier analysis revealed defect‐free arrays of 25 nm nanocrystals. These results demonstrate how to prepare GaAs nanocrystals with a sub‐25 nm diameter on Si(100) that avoids misfit defect formation. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | The conditions for selected area molecular beam epitaxial growth of GaAs nanoscale crystals on Si(100) were studied. Growth was confined to arrays of nanometer‐sized pores patterned in a SiO2 mask that provided exposure to the Si surface underneath. A model was developed to describe the growth process based on the probability of adatoms forming stable nuclei on the SiO2/Si surface. This model was applied to the growth of well‐ordered arrays of GaAs nanocrystals with dimensions as small as 20 nm. High‐resolution transmission electron microscopy imaging and Fourier analysis revealed defect‐free arrays of 25 nm nanocrystals. These results demonstrate how to prepare GaAs nanocrystals with a sub‐25 nm diameter on Si(100) that avoids misfit defect formation. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 16878434 |
| DOI: | 10.1155/amse/9925635 |
