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Formation of Ordered Arrays of Defect‐Free GaAs Nanocrystals on Si(100) Substrates.

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Title: Formation of Ordered Arrays of Defect‐Free GaAs Nanocrystals on Si(100) Substrates.
Authors: Savelyev, Igor1 (AUTHOR) igor.saveliev@utoronto.ca, Mitchell, William2 (AUTHOR), Ruda, Harry1 (AUTHOR), Bernier, Eric3 (AUTHOR), Boyko, Alena1 (AUTHOR), Souza, Christina1 (AUTHOR), Habib, Mohammad Rezwan (AUTHOR) mohabib@wiley.com
Source: Advances in Materials Science & Engineering. 4/18/2026, Vol. 2026, p1-9. 9p.
Subjects: Molecular beam epitaxy, Epitaxy, Nanocrystals, Silicon wafers, Semiconductor nanocrystals, Transmission electron microscopy, Nanopatterning, Nucleation
Abstract: The conditions for selected area molecular beam epitaxial growth of GaAs nanoscale crystals on Si(100) were studied. Growth was confined to arrays of nanometer‐sized pores patterned in a SiO2 mask that provided exposure to the Si surface underneath. A model was developed to describe the growth process based on the probability of adatoms forming stable nuclei on the SiO2/Si surface. This model was applied to the growth of well‐ordered arrays of GaAs nanocrystals with dimensions as small as 20 nm. High‐resolution transmission electron microscopy imaging and Fourier analysis revealed defect‐free arrays of 25 nm nanocrystals. These results demonstrate how to prepare GaAs nanocrystals with a sub‐25 nm diameter on Si(100) that avoids misfit defect formation. [ABSTRACT FROM AUTHOR]
Copyright of Advances in Materials Science & Engineering is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Formation of Ordered Arrays of Defect‐Free GaAs Nanocrystals on Si(100) Substrates.
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  Data: <searchLink fieldCode="JN" term="%22Advances+in+Materials+Science+%26+Engineering%22">Advances in Materials Science & Engineering</searchLink>. 4/18/2026, Vol. 2026, p1-9. 9p.
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  Data: <searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Nanocrystals%22">Nanocrystals</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+wafers%22">Silicon wafers</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+nanocrystals%22">Semiconductor nanocrystals</searchLink><br /><searchLink fieldCode="DE" term="%22Transmission+electron+microscopy%22">Transmission electron microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Nanopatterning%22">Nanopatterning</searchLink><br /><searchLink fieldCode="DE" term="%22Nucleation%22">Nucleation</searchLink>
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  Data: The conditions for selected area molecular beam epitaxial growth of GaAs nanoscale crystals on Si(100) were studied. Growth was confined to arrays of nanometer‐sized pores patterned in a SiO2 mask that provided exposure to the Si surface underneath. A model was developed to describe the growth process based on the probability of adatoms forming stable nuclei on the SiO2/Si surface. This model was applied to the growth of well‐ordered arrays of GaAs nanocrystals with dimensions as small as 20 nm. High‐resolution transmission electron microscopy imaging and Fourier analysis revealed defect‐free arrays of 25 nm nanocrystals. These results demonstrate how to prepare GaAs nanocrystals with a sub‐25 nm diameter on Si(100) that avoids misfit defect formation. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Advances in Materials Science & Engineering is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1155/amse/9925635
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        Text: English
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      – SubjectFull: Molecular beam epitaxy
        Type: general
      – SubjectFull: Epitaxy
        Type: general
      – SubjectFull: Nanocrystals
        Type: general
      – SubjectFull: Silicon wafers
        Type: general
      – SubjectFull: Semiconductor nanocrystals
        Type: general
      – SubjectFull: Transmission electron microscopy
        Type: general
      – SubjectFull: Nanopatterning
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      – SubjectFull: Nucleation
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      – TitleFull: Formation of Ordered Arrays of Defect‐Free GaAs Nanocrystals on Si(100) Substrates.
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              M: 04
              Text: 4/18/2026
              Type: published
              Y: 2026
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