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Effect of various buffer layers for the large-scale atomic layer deposition integration of archetypical SrTiO3 thin film on silicon substrate.

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Title: Effect of various buffer layers for the large-scale atomic layer deposition integration of archetypical SrTiO3 thin film on silicon substrate.
Authors: Berini, Bruno1 (AUTHOR) bruno.berini@uvsq.fr, Burcea, Razvan2,3 (AUTHOR), Vallet, Maxime2,4 (AUTHOR), Fouchet, Arnaud5 (AUTHOR), Aureau, Damien6 (AUTHOR), Frégnaux, Mathieu6 (AUTHOR), Carretero, Cécile7 (AUTHOR), Hurand, Simon8 (AUTHOR), Demange, Valérie9 (AUTHOR), Dumont, Yves1 (AUTHOR)
Source: Applied Surface Science. Aug2026, Vol. 736, pN.PAG-N.PAG. 1p.
Subjects: Buffer layers, Strontium titanate, Atomic layer deposition, Substrates (Materials science), Titanium dioxide, Crystallization, Oxides, Nanostructured materials
Abstract: [Display omitted] • Crystalline SrTiO 3 films grown on Silicon (001) via DLI-ALD with super-cycle approach. • Use of binary oxide buffers (TiO 2 , Sr-O) to limit Si diffusion and enhance STO crystallinity. • [Ca 2 Nb 3 O 10 ]− nanosheets promote [001]-oriented STO via domain-matching epitaxy. • STO/NNS platform enables large-area growth of functional oxides on silicon. • Two nanosheets suffice to suppress Si diffusion and induce STO crystallization. The integration of perovskite oxides on silicon remains a technological bottleneck, particularly for the growth of thin SrTiO 3 (STO) films used as buffer or template layers for epitaxy. While Atomic Layer Deposition (ALD) offers scalability and conformality, achieving crystalline STO on silicon is hindered by low-temperature constraints and silicon diffusion during post-deposition annealing. This study explores STO growth via Direct Liquid Injection-ALD using Titanium Tetra-IsoPropoxide [Ti(O-iPr) 4 ] and Strontium bis(2,2,6,6-tetramethyl-3,5-heptanedionate) (Sr(thd) 2), with engineered buffer layers to enhance crystallization and suppress interdiffusion. We first investigate cationic stoichiometry control by adjusting the number of TiO 2 and Sr-O sub-cycles. Scanning Transmission Electron Microscopy analysis confirms STO layer formation but reveals silicon diffusion that impedes crystallization. To address this, we introduce 10 nm-thick binary oxide layers (TiO 2 and Sr-O) and [Ca 2 Nb 3 O 10 ]− nanosheets (NNS) as diffusion barriers. A crystallized TiO 2 layer further improves STO structural quality, while NNS promote [001]-oriented STO growth on silicon. These results demonstrate a viable route for large-area crystalline STO deposition on silicon, with implications for the integration of functional oxides requiring controlled orientation and crystallinity. The STO/NNS platform offers a scalable template for subsequent oxide growth, paving the way for multifunctional oxide electronics on silicon and other technologically relevant substrates. [ABSTRACT FROM AUTHOR]
Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 193089851
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  Data: Effect of various buffer layers for the large-scale atomic layer deposition integration of archetypical SrTiO3 thin film on silicon substrate.
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  Data: <searchLink fieldCode="AR" term="%22Berini%2C+Bruno%22">Berini, Bruno</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> bruno.berini@uvsq.fr</i><br /><searchLink fieldCode="AR" term="%22Burcea%2C+Razvan%22">Burcea, Razvan</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Vallet%2C+Maxime%22">Vallet, Maxime</searchLink><relatesTo>2,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fouchet%2C+Arnaud%22">Fouchet, Arnaud</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Aureau%2C+Damien%22">Aureau, Damien</searchLink><relatesTo>6</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Frégnaux%2C+Mathieu%22">Frégnaux, Mathieu</searchLink><relatesTo>6</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Carretero%2C+Cécile%22">Carretero, Cécile</searchLink><relatesTo>7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hurand%2C+Simon%22">Hurand, Simon</searchLink><relatesTo>8</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Demange%2C+Valérie%22">Demange, Valérie</searchLink><relatesTo>9</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Dumont%2C+Yves%22">Dumont, Yves</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="DE" term="%22Buffer+layers%22">Buffer layers</searchLink><br /><searchLink fieldCode="DE" term="%22Strontium+titanate%22">Strontium titanate</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+layer+deposition%22">Atomic layer deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Titanium+dioxide%22">Titanium dioxide</searchLink><br /><searchLink fieldCode="DE" term="%22Crystallization%22">Crystallization</searchLink><br /><searchLink fieldCode="DE" term="%22Oxides%22">Oxides</searchLink><br /><searchLink fieldCode="DE" term="%22Nanostructured+materials%22">Nanostructured materials</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: [Display omitted] • Crystalline SrTiO 3 films grown on Silicon (001) via DLI-ALD with super-cycle approach. • Use of binary oxide buffers (TiO 2 , Sr-O) to limit Si diffusion and enhance STO crystallinity. • [Ca 2 Nb 3 O 10 ]− nanosheets promote [001]-oriented STO via domain-matching epitaxy. • STO/NNS platform enables large-area growth of functional oxides on silicon. • Two nanosheets suffice to suppress Si diffusion and induce STO crystallization. The integration of perovskite oxides on silicon remains a technological bottleneck, particularly for the growth of thin SrTiO 3 (STO) films used as buffer or template layers for epitaxy. While Atomic Layer Deposition (ALD) offers scalability and conformality, achieving crystalline STO on silicon is hindered by low-temperature constraints and silicon diffusion during post-deposition annealing. This study explores STO growth via Direct Liquid Injection-ALD using Titanium Tetra-IsoPropoxide [Ti(O-iPr) 4 ] and Strontium bis(2,2,6,6-tetramethyl-3,5-heptanedionate) (Sr(thd) 2), with engineered buffer layers to enhance crystallization and suppress interdiffusion. We first investigate cationic stoichiometry control by adjusting the number of TiO 2 and Sr-O sub-cycles. Scanning Transmission Electron Microscopy analysis confirms STO layer formation but reveals silicon diffusion that impedes crystallization. To address this, we introduce 10 nm-thick binary oxide layers (TiO 2 and Sr-O) and [Ca 2 Nb 3 O 10 ]− nanosheets (NNS) as diffusion barriers. A crystallized TiO 2 layer further improves STO structural quality, while NNS promote [001]-oriented STO growth on silicon. These results demonstrate a viable route for large-area crystalline STO deposition on silicon, with implications for the integration of functional oxides requiring controlled orientation and crystallinity. The STO/NNS platform offers a scalable template for subsequent oxide growth, paving the way for multifunctional oxide electronics on silicon and other technologically relevant substrates. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.apsusc.2026.166810
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Buffer layers
        Type: general
      – SubjectFull: Strontium titanate
        Type: general
      – SubjectFull: Atomic layer deposition
        Type: general
      – SubjectFull: Substrates (Materials science)
        Type: general
      – SubjectFull: Titanium dioxide
        Type: general
      – SubjectFull: Crystallization
        Type: general
      – SubjectFull: Oxides
        Type: general
      – SubjectFull: Nanostructured materials
        Type: general
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      – TitleFull: Effect of various buffer layers for the large-scale atomic layer deposition integration of archetypical SrTiO3 thin film on silicon substrate.
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            – D: 01
              M: 08
              Text: Aug2026
              Type: published
              Y: 2026
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