Effect of various buffer layers for the large-scale atomic layer deposition integration of archetypical SrTiO3 thin film on silicon substrate.
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| Title: | Effect of various buffer layers for the large-scale atomic layer deposition integration of archetypical SrTiO3 thin film on silicon substrate. |
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| Authors: | Berini, Bruno1 (AUTHOR) bruno.berini@uvsq.fr, Burcea, Razvan2,3 (AUTHOR), Vallet, Maxime2,4 (AUTHOR), Fouchet, Arnaud5 (AUTHOR), Aureau, Damien6 (AUTHOR), Frégnaux, Mathieu6 (AUTHOR), Carretero, Cécile7 (AUTHOR), Hurand, Simon8 (AUTHOR), Demange, Valérie9 (AUTHOR), Dumont, Yves1 (AUTHOR) |
| Source: | Applied Surface Science. Aug2026, Vol. 736, pN.PAG-N.PAG. 1p. |
| Subjects: | Buffer layers, Strontium titanate, Atomic layer deposition, Substrates (Materials science), Titanium dioxide, Crystallization, Oxides, Nanostructured materials |
| Abstract: | [Display omitted] • Crystalline SrTiO 3 films grown on Silicon (001) via DLI-ALD with super-cycle approach. • Use of binary oxide buffers (TiO 2 , Sr-O) to limit Si diffusion and enhance STO crystallinity. • [Ca 2 Nb 3 O 10 ]− nanosheets promote [001]-oriented STO via domain-matching epitaxy. • STO/NNS platform enables large-area growth of functional oxides on silicon. • Two nanosheets suffice to suppress Si diffusion and induce STO crystallization. The integration of perovskite oxides on silicon remains a technological bottleneck, particularly for the growth of thin SrTiO 3 (STO) films used as buffer or template layers for epitaxy. While Atomic Layer Deposition (ALD) offers scalability and conformality, achieving crystalline STO on silicon is hindered by low-temperature constraints and silicon diffusion during post-deposition annealing. This study explores STO growth via Direct Liquid Injection-ALD using Titanium Tetra-IsoPropoxide [Ti(O-iPr) 4 ] and Strontium bis(2,2,6,6-tetramethyl-3,5-heptanedionate) (Sr(thd) 2), with engineered buffer layers to enhance crystallization and suppress interdiffusion. We first investigate cationic stoichiometry control by adjusting the number of TiO 2 and Sr-O sub-cycles. Scanning Transmission Electron Microscopy analysis confirms STO layer formation but reveals silicon diffusion that impedes crystallization. To address this, we introduce 10 nm-thick binary oxide layers (TiO 2 and Sr-O) and [Ca 2 Nb 3 O 10 ]− nanosheets (NNS) as diffusion barriers. A crystallized TiO 2 layer further improves STO structural quality, while NNS promote [001]-oriented STO growth on silicon. These results demonstrate a viable route for large-area crystalline STO deposition on silicon, with implications for the integration of functional oxides requiring controlled orientation and crystallinity. The STO/NNS platform offers a scalable template for subsequent oxide growth, paving the way for multifunctional oxide electronics on silicon and other technologically relevant substrates. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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