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A novel approach for performance improvements of TSV and TTSV of 3D IC through thermoelectric effect and mechanical reliability analysis.

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Title: A novel approach for performance improvements of TSV and TTSV of 3D IC through thermoelectric effect and mechanical reliability analysis.
Authors: Chaudhuri, Debika1 (AUTHOR) debika.chaudhuri@gmail.com, Rahaman, Hafizur2 (AUTHOR), Ghosh, Tamal1 (AUTHOR)
Source: Sādhanā: Academy Proceedings in Engineering Sciences. Jun2026, Vol. 51 Issue 2, p1-10. 10p.
Subjects: Through-silicon via, Three-dimensional integrated circuits, Reliability in engineering, Thermoelectric effects, Finite element method, Thermal stresses
Abstract: In modern three-dimensional integrated circuits (3D ICs), one of the most popular and essential structures is through silicon via (TSV), although there is a significant concern about its reliability. In this endeavor, to ensure the reduction of mechanical reliability problems, a model of 3D ICs having TSV and thermal through silicon via (TTSV) structures is proposed to achieve design optimization. In this study, a complete thermo-mechanical stress induced by TSV is analyzed for the proposed structure under high temperatures and current environments using the finite element method (FEM). Furthermore, the effects of TSV diameter, TTSV diameter, pitch size and SiO2 liner were analyzed to achieve electrical and thermomechanical reliability. Proper TSV parameter selection and TTSV placement are recommended for reliability and heat mitigation. Our results demonstrate the effectiveness of the proposed model in mitigating heat with efficient signal transfer. [ABSTRACT FROM AUTHOR]
Copyright of Sādhanā: Academy Proceedings in Engineering Sciences is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: A novel approach for performance improvements of TSV and TTSV of 3D IC through thermoelectric effect and mechanical reliability analysis.
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  Data: <searchLink fieldCode="DE" term="%22Through-silicon+via%22">Through-silicon via</searchLink><br /><searchLink fieldCode="DE" term="%22Three-dimensional+integrated+circuits%22">Three-dimensional integrated circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Reliability+in+engineering%22">Reliability in engineering</searchLink><br /><searchLink fieldCode="DE" term="%22Thermoelectric+effects%22">Thermoelectric effects</searchLink><br /><searchLink fieldCode="DE" term="%22Finite+element+method%22">Finite element method</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+stresses%22">Thermal stresses</searchLink>
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  Data: In modern three-dimensional integrated circuits (3D ICs), one of the most popular and essential structures is through silicon via (TSV), although there is a significant concern about its reliability. In this endeavor, to ensure the reduction of mechanical reliability problems, a model of 3D ICs having TSV and thermal through silicon via (TTSV) structures is proposed to achieve design optimization. In this study, a complete thermo-mechanical stress induced by TSV is analyzed for the proposed structure under high temperatures and current environments using the finite element method (FEM). Furthermore, the effects of TSV diameter, TTSV diameter, pitch size and SiO2 liner were analyzed to achieve electrical and thermomechanical reliability. Proper TSV parameter selection and TTSV placement are recommended for reliability and heat mitigation. Our results demonstrate the effectiveness of the proposed model in mitigating heat with efficient signal transfer. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Sādhanā: Academy Proceedings in Engineering Sciences is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s12046-026-03073-0
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      – Code: eng
        Text: English
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      – SubjectFull: Through-silicon via
        Type: general
      – SubjectFull: Three-dimensional integrated circuits
        Type: general
      – SubjectFull: Reliability in engineering
        Type: general
      – SubjectFull: Thermoelectric effects
        Type: general
      – SubjectFull: Finite element method
        Type: general
      – SubjectFull: Thermal stresses
        Type: general
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      – TitleFull: A novel approach for performance improvements of TSV and TTSV of 3D IC through thermoelectric effect and mechanical reliability analysis.
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            NameFull: Rahaman, Hafizur
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            NameFull: Ghosh, Tamal
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            – D: 01
              M: 06
              Text: Jun2026
              Type: published
              Y: 2026
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            – TitleFull: Sādhanā: Academy Proceedings in Engineering Sciences
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