Effects of Annealing Temperature on Interfacial Structure and Thermal Conductivity of Hot-Pressed Copper/Cr-Coated Diamond Composites.
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| Title: | Effects of Annealing Temperature on Interfacial Structure and Thermal Conductivity of Hot-Pressed Copper/Cr-Coated Diamond Composites. |
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| Authors: | Liu, Yajing1 (AUTHOR), Chen, Xiaohong2 (AUTHOR), Liu, Yong2,3 (AUTHOR), Tian, Wei1,3 (AUTHOR) tianweiusst@163.com, Zhou, Fanfan2 (AUTHOR), Zhou, Honglei2,3 (AUTHOR), Wang, Yicheng2 (AUTHOR) |
| Source: | Materials (1996-1944). Apr2026, Vol. 19 Issue 8, p1534. 21p. |
| Subjects: | Thermal conductivity, Interface structures, Phonon dispersion relations, Metallic composites, Magnetron sputtering, Heat transfer, Composite coating |
| Abstract: | Efficient heat dissipation is crucial for semiconductor devices; however, conventional thermal management materials often cannot meet practical demands because of inadequate thermal conductivity and mismatched coefficients of thermal expansion with semiconductor materials. In this study, we develop a synergistic process integrating magnetron sputtering and annealing to fabricate a composition-controllable Cr/Cr3C2 composite interlayer on diamond surfaces. By regulating the annealing temperature from 700 to 1100 °C, three key parameters of the Cr/Cr3C2 composite interlayer can be tailored: the thickness varies from ~200 to 800 nm, the Cr/Cr3C2 fraction is adjustable, and the surface roughness ranges from 33.3 to 61.6 nm. In the current research, the sample that was annealed at 900 °C for 2 h exhibited the highest coating uniformity, with carbide coverage exceeding 98% and no discernible porosity. This optimized annealing process produces an interlayer with robust coverage, moderate thickness (~300 nm), and low surface roughness (Ra = 33.3 nm), thereby markedly enhancing interfacial bonding and thermal-transport performance. The resulting composite achieves a maximum thermal conductivity of 605.27 W·m−1·K−1, corresponding to 211% of the experimentally measured value for the uncoated sample. Analyses combining the diffusion mismatch model and experimentation indicate that the enhancement originates from improved phonon spectral matching and increased interfacial adhesion energy. This work provides processing guidance for precise interface engineering in high-thermal-conductivity diamond/copper composites. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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| Abstract: | Efficient heat dissipation is crucial for semiconductor devices; however, conventional thermal management materials often cannot meet practical demands because of inadequate thermal conductivity and mismatched coefficients of thermal expansion with semiconductor materials. In this study, we develop a synergistic process integrating magnetron sputtering and annealing to fabricate a composition-controllable Cr/Cr3C2 composite interlayer on diamond surfaces. By regulating the annealing temperature from 700 to 1100 °C, three key parameters of the Cr/Cr3C2 composite interlayer can be tailored: the thickness varies from ~200 to 800 nm, the Cr/Cr3C2 fraction is adjustable, and the surface roughness ranges from 33.3 to 61.6 nm. In the current research, the sample that was annealed at 900 °C for 2 h exhibited the highest coating uniformity, with carbide coverage exceeding 98% and no discernible porosity. This optimized annealing process produces an interlayer with robust coverage, moderate thickness (~300 nm), and low surface roughness (Ra = 33.3 nm), thereby markedly enhancing interfacial bonding and thermal-transport performance. The resulting composite achieves a maximum thermal conductivity of 605.27 W·m−1·K−1, corresponding to 211% of the experimentally measured value for the uncoated sample. Analyses combining the diffusion mismatch model and experimentation indicate that the enhancement originates from improved phonon spectral matching and increased interfacial adhesion energy. This work provides processing guidance for precise interface engineering in high-thermal-conductivity diamond/copper composites. [ABSTRACT FROM AUTHOR] |
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| ISSN: | 19961944 |
| DOI: | 10.3390/ma19081534 |
