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Dynamic Amorphization and Potential Recovery Mechanisms in Silicon Carbide Fatigue: Atomic‐Scale Insights Across Single‐Crystal to Polycrystalline Structures.

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Title: Dynamic Amorphization and Potential Recovery Mechanisms in Silicon Carbide Fatigue: Atomic‐Scale Insights Across Single‐Crystal to Polycrystalline Structures.
Authors: Zeng, Qingfeng1 (AUTHOR) bht0045@tmslab.cn, Gong, Zhenyuan1 (AUTHOR), Guan, Kang2 (AUTHOR) kangguan123@gmail.com, Li, Qiuyan2 (AUTHOR), Liu, Jiantao3 (AUTHOR)
Source: Fatigue & Fracture of Engineering Materials & Structures. Jun2026, Vol. 49 Issue 6, p2217-2229. 13p.
Subjects: Amorphization, Crack propagation, Mechanical behavior of materials, Material fatigue, Strain rate, Polycrystals, Molecular dynamics, Temperature effect
Abstract: Understanding the fatigue behavior of silicon carbide (SiC) is critical for its deployment in high‐temperature environments. This work utilizes large‐scale molecular dynamics simulations to investigate fatigue‐crack propagation in both single‐crystal and polycrystalline 3C‐SiC, considering varied strain ratios (R = 0.4–0.6), strain rates (10 9–1011 s−1), and temperatures (300–1500 K). A lower strain ratio (R = 0.4) enhances fatigue life by approximately 50%, owing to crack tip amorphization that mitigates local stress concentration. Under high strain rates (1011 s−1), dynamic amorphization is promoted, which reduces crack‐propagation rates by up to 40.5% and increases the fracture toughness (KIC) by 16.3% in single‐crystal samples. Temperature exhibits the most pronounced effect: At 1500 K, polycrystalline SiC suffers a 71.6% reduction in KIC, with failure transitioning to a cooperative multigrain boundary network mechanism. Notably, cyclic loading at 1500 K leads to significantly lower amorphous content (7.4%) compared with monotonic loading (27.8%), hinting at a potential recovery‐like process during unloading phases. These atomic‐scale insights highlight microstructural and grain boundary engineering as promising strategies for improving the fatigue resistance of SiC. Summary: Crack tip amorphization at low strain ratios improves fatigue resistance.High strain rates induce dynamic amorphization, acting as shock absorbers.Grain boundary network failure dominates polycrystalline SiC at high temperatures.A novel atomic‐scale recovery (healing) mechanism is identified in SiC fatigue. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:Understanding the fatigue behavior of silicon carbide (SiC) is critical for its deployment in high‐temperature environments. This work utilizes large‐scale molecular dynamics simulations to investigate fatigue‐crack propagation in both single‐crystal and polycrystalline 3C‐SiC, considering varied strain ratios (R = 0.4–0.6), strain rates (10 9–1011 s−1), and temperatures (300–1500 K). A lower strain ratio (R = 0.4) enhances fatigue life by approximately 50%, owing to crack tip amorphization that mitigates local stress concentration. Under high strain rates (1011 s−1), dynamic amorphization is promoted, which reduces crack‐propagation rates by up to 40.5% and increases the fracture toughness (KIC) by 16.3% in single‐crystal samples. Temperature exhibits the most pronounced effect: At 1500 K, polycrystalline SiC suffers a 71.6% reduction in KIC, with failure transitioning to a cooperative multigrain boundary network mechanism. Notably, cyclic loading at 1500 K leads to significantly lower amorphous content (7.4%) compared with monotonic loading (27.8%), hinting at a potential recovery‐like process during unloading phases. These atomic‐scale insights highlight microstructural and grain boundary engineering as promising strategies for improving the fatigue resistance of SiC. Summary: Crack tip amorphization at low strain ratios improves fatigue resistance.High strain rates induce dynamic amorphization, acting as shock absorbers.Grain boundary network failure dominates polycrystalline SiC at high temperatures.A novel atomic‐scale recovery (healing) mechanism is identified in SiC fatigue. [ABSTRACT FROM AUTHOR]
ISSN:8756758X
DOI:10.1111/ffe.70256