Enhancing thermoelectric performance of GeTe monolayer via modulation doping at Ge sites.
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| Title: | Enhancing thermoelectric performance of GeTe monolayer via modulation doping at Ge sites. |
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| Authors: | Gong, L J1 (AUTHOR), Cheng, R S1 (AUTHOR), Han, Q Z2 (AUTHOR) hanqz@baqis.ac.cn, Yang, J3 (AUTHOR) jieyang-ip@hotmail.com, Shi, H L4,5 (AUTHOR), Zhao, Y H6,7 (AUTHOR), Jiang, Z T1 (AUTHOR) jiangzhaotan@bit.edu.cn |
| Source: | Nanotechnology. 2026, Vol. 37 Issue 18, p1-19. 19p. |
| Subjects: | Doping agents (Chemistry), Seebeck coefficient, Nanostructured materials, Electronic band structure, Phonon dispersion relations, Thermoelectric effects |
| Abstract: | Aiming at improving the thermoelectric (TE) performance of the GeTe monolayer by means of doping, we systematically investigate the TE properties of the doped GeTe monolayers. By testing most of the atoms in Groups IIA–VA, we found that Be, Mg, Sn, and Pb are possible dopants in view of their stability and electrical conductivity. It is shown that the doping atom types and the doping concentrations can make different influences on the electronic energy band structures, the phononic spectra, and the electronic (phononic) transmission spectra. Furthermore, the Seebeck coefficient S, the electrical conductance G, the power factor S 2 G , and the electronic (phononic) thermal conductances κ e (ph) will be changed to varying extents. Finally, we find that the resulting figures of merit ZT s are closely dependent on the doping atom types and the doping concentration. In comparison with the pristine GeTe monolayer, the ZT peaks of the doped one can be manipulated by the atomic doping. At appropriate doping concentrations for different doping atoms, these ZT peaks can be improved. Our findings demonstrate the feasibility of using Be, Mg, Sn, and Pb as the dopants to enhance the TE performance of the GeTe monolayer. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 193492463 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Enhancing thermoelectric performance of GeTe monolayer via modulation doping at Ge sites. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Gong%2C+L+J%22">Gong, L J</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cheng%2C+R+S%22">Cheng, R S</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Han%2C+Q+Z%22">Han, Q Z</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> hanqz@baqis.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Yang%2C+J%22">Yang, J</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> jieyang-ip@hotmail.com</i><br /><searchLink fieldCode="AR" term="%22Shi%2C+H+L%22">Shi, H L</searchLink><relatesTo>4,5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhao%2C+Y+H%22">Zhao, Y H</searchLink><relatesTo>6,7</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jiang%2C+Z+T%22">Jiang, Z T</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> jiangzhaotan@bit.edu.cn</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nanotechnology%22">Nanotechnology</searchLink>. 2026, Vol. 37 Issue 18, p1-19. 19p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Doping+agents+%28Chemistry%29%22">Doping agents (Chemistry)</searchLink><br /><searchLink fieldCode="DE" term="%22Seebeck+coefficient%22">Seebeck coefficient</searchLink><br /><searchLink fieldCode="DE" term="%22Nanostructured+materials%22">Nanostructured materials</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+band+structure%22">Electronic band structure</searchLink><br /><searchLink fieldCode="DE" term="%22Phonon+dispersion+relations%22">Phonon dispersion relations</searchLink><br /><searchLink fieldCode="DE" term="%22Thermoelectric+effects%22">Thermoelectric effects</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Aiming at improving the thermoelectric (TE) performance of the GeTe monolayer by means of doping, we systematically investigate the TE properties of the doped GeTe monolayers. By testing most of the atoms in Groups IIA–VA, we found that Be, Mg, Sn, and Pb are possible dopants in view of their stability and electrical conductivity. It is shown that the doping atom types and the doping concentrations can make different influences on the electronic energy band structures, the phononic spectra, and the electronic (phononic) transmission spectra. Furthermore, the Seebeck coefficient S, the electrical conductance G, the power factor S 2 G , and the electronic (phononic) thermal conductances κ e (ph) will be changed to varying extents. Finally, we find that the resulting figures of merit ZT s are closely dependent on the doping atom types and the doping concentration. In comparison with the pristine GeTe monolayer, the ZT peaks of the doped one can be manipulated by the atomic doping. At appropriate doping concentrations for different doping atoms, these ZT peaks can be improved. Our findings demonstrate the feasibility of using Be, Mg, Sn, and Pb as the dopants to enhance the TE performance of the GeTe monolayer. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1088/1361-6528/ae6274 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 19 StartPage: 1 Subjects: – SubjectFull: Doping agents (Chemistry) Type: general – SubjectFull: Seebeck coefficient Type: general – SubjectFull: Nanostructured materials Type: general – SubjectFull: Electronic band structure Type: general – SubjectFull: Phonon dispersion relations Type: general – SubjectFull: Thermoelectric effects Type: general Titles: – TitleFull: Enhancing thermoelectric performance of GeTe monolayer via modulation doping at Ge sites. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Gong, L J – PersonEntity: Name: NameFull: Cheng, R S – PersonEntity: Name: NameFull: Han, Q Z – PersonEntity: Name: NameFull: Yang, J – PersonEntity: Name: NameFull: Shi, H L – PersonEntity: Name: NameFull: Zhao, Y H – PersonEntity: Name: NameFull: Jiang, Z T IsPartOfRelationships: – BibEntity: Dates: – D: 08 M: 05 Text: 2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 09574484 Numbering: – Type: volume Value: 37 – Type: issue Value: 18 Titles: – TitleFull: Nanotechnology Type: main |
| ResultId | 1 |
