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Growth of aligned molybdenum disulfide on sapphire via atmospheric-pressure chemical vapor deposition.

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Title: Growth of aligned molybdenum disulfide on sapphire via atmospheric-pressure chemical vapor deposition.
Authors: Li, Jiangbin1 (AUTHOR), Li, Zebin1 (AUTHOR) lizebinn@163.com, Li, Lianbi1 (AUTHOR) xpu_lilianbi@163.com
Source: Materials Letters. Aug2026, Vol. 417, pN.PAG-N.PAG. 1p.
Subjects: Molybdenum disulfide, Chemical vapor deposition, Photoelectric devices, Thin films, Crystal grain boundaries, Substrates (Materials science), Semiconductor thin films, Electric conductivity
Abstract: Molybdenum disulfide (MoS 2), a two-dimensional semiconductor, is considered an ideal channel material for post-Moore era transistors due to its atomic thickness, high carrier mobility, and superior gate control ability. In this study, aligned monolayer MoS 2 was synthesized on a sapphire substrate using atmospheric-pressure chemical vapor deposition (APCVD). The aligned orientation of MoS 2 was confirmed using optical microscopy. Spectroscopic and structural analyses showed that the as-grown MoS 2 was a monolayer with high crystalline quality. Planar metal-semiconductor-metal (MSM) devices fabricated from this material displayed good photoresponse ability. • Growth of Aligned MoS 2 via Atmospheric-Pressure Chemical Vapor Deposition. • Parallel-oriented MoS 2 exhibits more uniform quality compared to antiparallel-oriented MoS 2. • Electrical measurements indicate the presence of grain boundaries. [ABSTRACT FROM AUTHOR]
Copyright of Materials Letters is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 193680658
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  Label: Title
  Group: Ti
  Data: Growth of aligned molybdenum disulfide on sapphire via atmospheric-pressure chemical vapor deposition.
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  Data: <searchLink fieldCode="AR" term="%22Li%2C+Jiangbin%22">Li, Jiangbin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Zebin%22">Li, Zebin</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> lizebinn@163.com</i><br /><searchLink fieldCode="AR" term="%22Li%2C+Lianbi%22">Li, Lianbi</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> xpu_lilianbi@163.com</i>
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  Data: <searchLink fieldCode="JN" term="%22Materials+Letters%22">Materials Letters</searchLink>. Aug2026, Vol. 417, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Molybdenum+disulfide%22">Molybdenum disulfide</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+vapor+deposition%22">Chemical vapor deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Photoelectric+devices%22">Photoelectric devices</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+grain+boundaries%22">Crystal grain boundaries</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+thin+films%22">Semiconductor thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+conductivity%22">Electric conductivity</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Molybdenum disulfide (MoS 2), a two-dimensional semiconductor, is considered an ideal channel material for post-Moore era transistors due to its atomic thickness, high carrier mobility, and superior gate control ability. In this study, aligned monolayer MoS 2 was synthesized on a sapphire substrate using atmospheric-pressure chemical vapor deposition (APCVD). The aligned orientation of MoS 2 was confirmed using optical microscopy. Spectroscopic and structural analyses showed that the as-grown MoS 2 was a monolayer with high crystalline quality. Planar metal-semiconductor-metal (MSM) devices fabricated from this material displayed good photoresponse ability. • Growth of Aligned MoS 2 via Atmospheric-Pressure Chemical Vapor Deposition. • Parallel-oriented MoS 2 exhibits more uniform quality compared to antiparallel-oriented MoS 2. • Electrical measurements indicate the presence of grain boundaries. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials Letters is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1016/j.matlet.2026.140734
    Languages:
      – Code: eng
        Text: English
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        PageCount: 1
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      – SubjectFull: Molybdenum disulfide
        Type: general
      – SubjectFull: Chemical vapor deposition
        Type: general
      – SubjectFull: Photoelectric devices
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Crystal grain boundaries
        Type: general
      – SubjectFull: Substrates (Materials science)
        Type: general
      – SubjectFull: Semiconductor thin films
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      – SubjectFull: Electric conductivity
        Type: general
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      – TitleFull: Growth of aligned molybdenum disulfide on sapphire via atmospheric-pressure chemical vapor deposition.
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            NameFull: Li, Jiangbin
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            NameFull: Li, Zebin
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            NameFull: Li, Lianbi
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            – D: 15
              M: 08
              Text: Aug2026
              Type: published
              Y: 2026
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              Value: 417
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