Ion doping induced photoconductivity enhancement and fast photorefractive response in LiNbO3 and LiTaO3 crystals: defect structure evolution and mechanism.

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Title: Ion doping induced photoconductivity enhancement and fast photorefractive response in LiNbO3 and LiTaO3 crystals: defect structure evolution and mechanism.
Authors: Xie, Feng1 (AUTHOR), Wang, Guoyang1 (AUTHOR), Yu, Liang1 (AUTHOR), Fang, Shuangquan1,2 (AUTHOR) sqfang@yzu.edu.cn
Source: CrystEngComm. 5/12/2026, Vol. 28 Issue 18, p2954-2964. 11p.
Subjects: Photoconductivity, Photorefractive effect, Doping agents (Chemistry), Crystals, Lithium niobate, Crystal defects, Optical information processing
Abstract: Lithium niobate (LiNbO3, LN) and lithium tantalate (LiTaO3, LT) crystals are two of the most important photorefractive materials with extensive applications in holographic storage and optical information processing. However, their long photorefractive response time and relatively low sensitivity have significantly restricted their practical applications. In this work, a systematic study on the ion doping effects on the photorefractive properties of LN and LT crystals was performed. Pr:Fe:LiNbO3 and Zn:LiTaO3 crystals with different doping concentrations were successfully grown by the conventional Czochralski method. X-ray diffraction (XRD) and infrared (IR) spectroscopy were employed to investigate the defect structure evolution and ion occupation mechanism in Zn:LiTaO3 crystals. The results revealed that Zn2+ ions preferentially replace the antisite tantalum (TaLi4+) defects at low doping concentrations, while occupying both Li and Ta sites simultaneously above the threshold concentration, forming a ZnTa3−–3ZnLi+ self-compensation structure. Two-wave coupling experiments demonstrate that both doping strategies significantly enhance the photorefractive response speed. In Pr:Fe:LiNbO3, the introduction of Pr ions reduces the response time from 142 s to 35 s while maintaining a high exponential gain coefficient. In Zn:LiTaO3, increasing Zn concentration leads to a monotonic decrease in response time, attributed to the alteration of the dominant charge transport mechanism. Theoretical analysis confirms that the enhancement in photoconductivity, driven by the modification of defect structures, is the primary mechanism responsible for the fast response in both crystal systems. These results provide a comprehensive guide for optimizing ferroelectric crystals for real-time optical information processing. [ABSTRACT FROM AUTHOR]
Copyright of CrystEngComm is the property of Royal Society of Chemistry and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
  Group: Ti
  Data: Ion doping induced photoconductivity enhancement and fast photorefractive response in LiNbO<subscript>3</subscript> and LiTaO<subscript>3</subscript> crystals: defect structure evolution and mechanism.
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  Data: <searchLink fieldCode="AR" term="%22Xie%2C+Feng%22">Xie, Feng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Guoyang%22">Wang, Guoyang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yu%2C+Liang%22">Yu, Liang</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fang%2C+Shuangquan%22">Fang, Shuangquan</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> sqfang@yzu.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22CrystEngComm%22">CrystEngComm</searchLink>. 5/12/2026, Vol. 28 Issue 18, p2954-2964. 11p.
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  Data: <searchLink fieldCode="DE" term="%22Photoconductivity%22">Photoconductivity</searchLink><br /><searchLink fieldCode="DE" term="%22Photorefractive+effect%22">Photorefractive effect</searchLink><br /><searchLink fieldCode="DE" term="%22Doping+agents+%28Chemistry%29%22">Doping agents (Chemistry)</searchLink><br /><searchLink fieldCode="DE" term="%22Crystals%22">Crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Lithium+niobate%22">Lithium niobate</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+defects%22">Crystal defects</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+information+processing%22">Optical information processing</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Lithium niobate (LiNbO3, LN) and lithium tantalate (LiTaO3, LT) crystals are two of the most important photorefractive materials with extensive applications in holographic storage and optical information processing. However, their long photorefractive response time and relatively low sensitivity have significantly restricted their practical applications. In this work, a systematic study on the ion doping effects on the photorefractive properties of LN and LT crystals was performed. Pr:Fe:LiNbO3 and Zn:LiTaO3 crystals with different doping concentrations were successfully grown by the conventional Czochralski method. X-ray diffraction (XRD) and infrared (IR) spectroscopy were employed to investigate the defect structure evolution and ion occupation mechanism in Zn:LiTaO3 crystals. The results revealed that Zn2+ ions preferentially replace the antisite tantalum (TaLi4+) defects at low doping concentrations, while occupying both Li and Ta sites simultaneously above the threshold concentration, forming a ZnTa3−–3ZnLi+ self-compensation structure. Two-wave coupling experiments demonstrate that both doping strategies significantly enhance the photorefractive response speed. In Pr:Fe:LiNbO3, the introduction of Pr ions reduces the response time from 142 s to 35 s while maintaining a high exponential gain coefficient. In Zn:LiTaO3, increasing Zn concentration leads to a monotonic decrease in response time, attributed to the alteration of the dominant charge transport mechanism. Theoretical analysis confirms that the enhancement in photoconductivity, driven by the modification of defect structures, is the primary mechanism responsible for the fast response in both crystal systems. These results provide a comprehensive guide for optimizing ferroelectric crystals for real-time optical information processing. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of CrystEngComm is the property of Royal Society of Chemistry and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1039/d6ce00162a
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      – Code: eng
        Text: English
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        PageCount: 11
        StartPage: 2954
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      – SubjectFull: Photoconductivity
        Type: general
      – SubjectFull: Photorefractive effect
        Type: general
      – SubjectFull: Doping agents (Chemistry)
        Type: general
      – SubjectFull: Crystals
        Type: general
      – SubjectFull: Lithium niobate
        Type: general
      – SubjectFull: Crystal defects
        Type: general
      – SubjectFull: Optical information processing
        Type: general
    Titles:
      – TitleFull: Ion doping induced photoconductivity enhancement and fast photorefractive response in LiNbO3 and LiTaO3 crystals: defect structure evolution and mechanism.
        Type: main
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          Name:
            NameFull: Xie, Feng
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            NameFull: Wang, Guoyang
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            NameFull: Yu, Liang
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            NameFull: Fang, Shuangquan
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              M: 05
              Text: 5/12/2026
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              Y: 2026
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