Improving 3C-SiC Quality Through Wafer-Bonded Switchback Epitaxy.
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| Title: | Improving 3C-SiC Quality Through Wafer-Bonded Switchback Epitaxy. |
|---|---|
| Authors: | Colston, Gerard1 (AUTHOR) g.colston.1@warwick.ac.uk, Perera, Kushani H.1 (AUTHOR), Renz, Arne1 (AUTHOR), Gammon, Peter1 (AUTHOR), Antoniou, Marina1 (AUTHOR), Mawby, Philip A.1 (AUTHOR), Shah, Vishal A.1 (AUTHOR) |
| Source: | Materials (1996-1944). May2026, Vol. 19 Issue 9, p1896. 8p. |
| Subjects: | Semiconductor wafer bonding, Epitaxy, Power electronics, Silicon carbide, Crystallinity |
| Abstract: | The crystallinity of cubic silicon carbide (3C-SiC) epilayers is improved through the use of a novel wafer bonding and regrowth technique resulting in a reduction in planar defects. The process involves the epitaxial growth of a 3–6 µm thick 3C-SiC seed on silicon (Si), which is polished and bonded to a new handle wafer before the original substrate and defective interface region of the 3C-SiC epilayer are removed. Further epitaxial growth on this Bonded Switchback template results in higher quality 3C-SiC epilayers through the reduction in crystal mosaicity, stacking fault defects, and elimination of interface voids. The process could be applied to 3C-SiC grown on both on- and off-axis substrates, and the form of the new handle has no impact on the growth process, enabling this technology to be applied to sapphire or hexagonal 4H-SiC substrates. The use of such substrates would overcome the thermal budget limitations of Si substrates for 3C-SiC heteroepitaxy and ion implantation. Bonded Switchback can improve material quality for applications in power electronics, as well as see the heterogeneous integration of 3C-SiC into other device structures, potentially leading to a new range of hybrid 3C-SiC/Si devices without the high density of defects observed at the interface between these two materials. [ABSTRACT FROM AUTHOR] |
| Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 193715702 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Improving 3C-SiC Quality Through Wafer-Bonded Switchback Epitaxy. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Colston%2C+Gerard%22">Colston, Gerard</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> g.colston.1@warwick.ac.uk</i><br /><searchLink fieldCode="AR" term="%22Perera%2C+Kushani+H%2E%22">Perera, Kushani H.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Renz%2C+Arne%22">Renz, Arne</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gammon%2C+Peter%22">Gammon, Peter</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Antoniou%2C+Marina%22">Antoniou, Marina</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mawby%2C+Philip+A%2E%22">Mawby, Philip A.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Shah%2C+Vishal+A%2E%22">Shah, Vishal A.</searchLink><relatesTo>1</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. May2026, Vol. 19 Issue 9, p1896. 8p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Semiconductor+wafer+bonding%22">Semiconductor wafer bonding</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Power+electronics%22">Power electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+carbide%22">Silicon carbide</searchLink><br /><searchLink fieldCode="DE" term="%22Crystallinity%22">Crystallinity</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The crystallinity of cubic silicon carbide (3C-SiC) epilayers is improved through the use of a novel wafer bonding and regrowth technique resulting in a reduction in planar defects. The process involves the epitaxial growth of a 3–6 µm thick 3C-SiC seed on silicon (Si), which is polished and bonded to a new handle wafer before the original substrate and defective interface region of the 3C-SiC epilayer are removed. Further epitaxial growth on this Bonded Switchback template results in higher quality 3C-SiC epilayers through the reduction in crystal mosaicity, stacking fault defects, and elimination of interface voids. The process could be applied to 3C-SiC grown on both on- and off-axis substrates, and the form of the new handle has no impact on the growth process, enabling this technology to be applied to sapphire or hexagonal 4H-SiC substrates. The use of such substrates would overcome the thermal budget limitations of Si substrates for 3C-SiC heteroepitaxy and ion implantation. Bonded Switchback can improve material quality for applications in power electronics, as well as see the heterogeneous integration of 3C-SiC into other device structures, potentially leading to a new range of hybrid 3C-SiC/Si devices without the high density of defects observed at the interface between these two materials. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/ma19091896 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 1896 Subjects: – SubjectFull: Semiconductor wafer bonding Type: general – SubjectFull: Epitaxy Type: general – SubjectFull: Power electronics Type: general – SubjectFull: Silicon carbide Type: general – SubjectFull: Crystallinity Type: general Titles: – TitleFull: Improving 3C-SiC Quality Through Wafer-Bonded Switchback Epitaxy. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Colston, Gerard – PersonEntity: Name: NameFull: Perera, Kushani H. – PersonEntity: Name: NameFull: Renz, Arne – PersonEntity: Name: NameFull: Gammon, Peter – PersonEntity: Name: NameFull: Antoniou, Marina – PersonEntity: Name: NameFull: Mawby, Philip A. – PersonEntity: Name: NameFull: Shah, Vishal A. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: May2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 19961944 Numbering: – Type: volume Value: 19 – Type: issue Value: 9 Titles: – TitleFull: Materials (1996-1944) Type: main |
| ResultId | 1 |
