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Comparison of Kinetic and Fluid Simulation Models for RF Capacitively Coupled Plasmas in Semiconductor Processing.

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Title: Comparison of Kinetic and Fluid Simulation Models for RF Capacitively Coupled Plasmas in Semiconductor Processing.
Authors: Kim, Hwanho1,2 (AUTHOR), Lee, Min Uk2,3 (AUTHOR), Lee, Hae June1,3 (AUTHOR) haejune@pusan.ac.kr
Source: Materials (1996-1944). May2026, Vol. 19 Issue 9, p1900. 23p.
Subjects: Low temperature plasmas, Drift diffusion models, Electrodes, Plasma dynamics, Kinetic theory of gases
Abstract: As low-temperature plasmas (LTPs) have gained significant attention in materials processing for the microelectronics industry, challenges in spatiotemporal analysis of plasma parameters in a radio frequency capacitively coupled plasma (RF-CCP) system necessitate multidimensional numerical simulations. This study investigated the conditions under which a kinetic simulation or a fluid model is effective for low-pressure CCPs, focusing on the critical role of energy-dependent electron kinetics in LTPs by comparing symmetric and asymmetric electrode structures. We provide a comprehensive investigation of particle energy distributions, elucidating the kinetic effects of non-Maxwellian distributions. The validity of standard fluid approximations, such as the drift–diffusion approximation and isotropic pressure assumptions, is assessed by comparing results from a two-dimensional fluid model with those from a particle-in-cell simulation. The dominance of the ion pressure tensor over isotropic approximations in the sheath has been observed, especially in an asymmetric electrode structure, which is more representative of realistic process chambers. [ABSTRACT FROM AUTHOR]
Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Comparison of Kinetic and Fluid Simulation Models for RF Capacitively Coupled Plasmas in Semiconductor Processing.
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  Data: <searchLink fieldCode="AR" term="%22Kim%2C+Hwanho%22">Kim, Hwanho</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lee%2C+Min+Uk%22">Lee, Min Uk</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lee%2C+Hae+June%22">Lee, Hae June</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<i> haejune@pusan.ac.kr</i>
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  Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. May2026, Vol. 19 Issue 9, p1900. 23p.
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  Data: <searchLink fieldCode="DE" term="%22Low+temperature+plasmas%22">Low temperature plasmas</searchLink><br /><searchLink fieldCode="DE" term="%22Drift+diffusion+models%22">Drift diffusion models</searchLink><br /><searchLink fieldCode="DE" term="%22Electrodes%22">Electrodes</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma+dynamics%22">Plasma dynamics</searchLink><br /><searchLink fieldCode="DE" term="%22Kinetic+theory+of+gases%22">Kinetic theory of gases</searchLink>
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  Label: Abstract
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  Data: As low-temperature plasmas (LTPs) have gained significant attention in materials processing for the microelectronics industry, challenges in spatiotemporal analysis of plasma parameters in a radio frequency capacitively coupled plasma (RF-CCP) system necessitate multidimensional numerical simulations. This study investigated the conditions under which a kinetic simulation or a fluid model is effective for low-pressure CCPs, focusing on the critical role of energy-dependent electron kinetics in LTPs by comparing symmetric and asymmetric electrode structures. We provide a comprehensive investigation of particle energy distributions, elucidating the kinetic effects of non-Maxwellian distributions. The validity of standard fluid approximations, such as the drift–diffusion approximation and isotropic pressure assumptions, is assessed by comparing results from a two-dimensional fluid model with those from a particle-in-cell simulation. The dominance of the ion pressure tensor over isotropic approximations in the sheath has been observed, especially in an asymmetric electrode structure, which is more representative of realistic process chambers. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/ma19091900
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      – Code: eng
        Text: English
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        PageCount: 23
        StartPage: 1900
    Subjects:
      – SubjectFull: Low temperature plasmas
        Type: general
      – SubjectFull: Drift diffusion models
        Type: general
      – SubjectFull: Electrodes
        Type: general
      – SubjectFull: Plasma dynamics
        Type: general
      – SubjectFull: Kinetic theory of gases
        Type: general
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      – TitleFull: Comparison of Kinetic and Fluid Simulation Models for RF Capacitively Coupled Plasmas in Semiconductor Processing.
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            NameFull: Kim, Hwanho
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            NameFull: Lee, Min Uk
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            NameFull: Lee, Hae June
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            – D: 01
              M: 05
              Text: May2026
              Type: published
              Y: 2026
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              Value: 19
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              Value: 9
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            – TitleFull: Materials (1996-1944)
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