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Initial and Middle Stages of Quantum Dots Growth: From Dynamics of Superstructures to Island-Size Distributions.

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Title: Initial and Middle Stages of Quantum Dots Growth: From Dynamics of Superstructures to Island-Size Distributions.
Authors: Kukenov, Olzhas1 (AUTHOR), Dirko, Vladimir1 (AUTHOR), Lozovoy, Kirill1 (AUTHOR) lozovoymailbox@gmail.com, Kokhanenko, Andrey1 (AUTHOR)
Source: Nanomaterials (2079-4991). May2026, Vol. 16 Issue 9, p510. 17p.
Subjects: Quantum dots, Nucleation, Silicon surfaces, Nanostructures, Optoelectronics, Epitaxy
Abstract: The dynamics of initial layer-by-layer growth and subsequent nucleation of quantum dots of Si and Ge on Si(001) were studied combining reflection high-energy electron diffraction, scanning electron microscopy and atomic force microscopy. It was shown that the processes occurring at the initial stage determine further growth of the heterostructure and final shape and density of nanoislands. The mechanisms of terrace formation, occurrence and dynamics of dimer rows of the 2 × N superstructure, and effects of temperature on the growth characteristics were described. The obtained experimental dependences show the critical relationship between the synthesis parameters (growth temperature), epitaxial growth processes and the characteristics of the resulting nanoislands. The fundamental studies conducted make it possible to create self-organizing quantum dots of a given size and density for advanced optoelectronics, including infrared photosensitive elements and single-photon detectors. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Initial and Middle Stages of Quantum Dots Growth: From Dynamics of Superstructures to Island-Size Distributions.
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. May2026, Vol. 16 Issue 9, p510. 17p.
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  Data: <searchLink fieldCode="DE" term="%22Quantum+dots%22">Quantum dots</searchLink><br /><searchLink fieldCode="DE" term="%22Nucleation%22">Nucleation</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+surfaces%22">Silicon surfaces</searchLink><br /><searchLink fieldCode="DE" term="%22Nanostructures%22">Nanostructures</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronics%22">Optoelectronics</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: The dynamics of initial layer-by-layer growth and subsequent nucleation of quantum dots of Si and Ge on Si(001) were studied combining reflection high-energy electron diffraction, scanning electron microscopy and atomic force microscopy. It was shown that the processes occurring at the initial stage determine further growth of the heterostructure and final shape and density of nanoislands. The mechanisms of terrace formation, occurrence and dynamics of dimer rows of the 2 × N superstructure, and effects of temperature on the growth characteristics were described. The obtained experimental dependences show the critical relationship between the synthesis parameters (growth temperature), epitaxial growth processes and the characteristics of the resulting nanoislands. The fundamental studies conducted make it possible to create self-organizing quantum dots of a given size and density for advanced optoelectronics, including infrared photosensitive elements and single-photon detectors. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.3390/nano16090510
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      – Code: eng
        Text: English
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        PageCount: 17
        StartPage: 510
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      – SubjectFull: Quantum dots
        Type: general
      – SubjectFull: Nucleation
        Type: general
      – SubjectFull: Silicon surfaces
        Type: general
      – SubjectFull: Nanostructures
        Type: general
      – SubjectFull: Optoelectronics
        Type: general
      – SubjectFull: Epitaxy
        Type: general
    Titles:
      – TitleFull: Initial and Middle Stages of Quantum Dots Growth: From Dynamics of Superstructures to Island-Size Distributions.
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            NameFull: Kukenov, Olzhas
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            NameFull: Dirko, Vladimir
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            NameFull: Lozovoy, Kirill
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            NameFull: Kokhanenko, Andrey
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            – D: 01
              M: 05
              Text: May2026
              Type: published
              Y: 2026
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            – TitleFull: Nanomaterials (2079-4991)
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