Stress Engineering in the Optimization of Next-Generation Hafnium-Based Ferroelectric Memory.
Saved in:
| Title: | Stress Engineering in the Optimization of Next-Generation Hafnium-Based Ferroelectric Memory. |
|---|---|
| Authors: | Li, Zhenhai1 (AUTHOR), Yuan, Ruihong2 (AUTHOR), Guo, Xingcan2,3 (AUTHOR), Hu, Yiqun1,4 (AUTHOR), Liu, Yongkai1,2 (AUTHOR), Yu, Jiajie2 (AUTHOR), Xu, Kangli2,3 (AUTHOR), Li, Qingxuan1,4 (AUTHOR), Wang, Tianyu3 (AUTHOR), Sun, Qingqing2 (AUTHOR), Zhang, David Wei2 (AUTHOR), Chen, Lin2,4 (AUTHOR) |
| Source: | Nanomaterials (2079-4991). May2026, Vol. 16 Issue 9, p516. 10p. |
| Subjects: | Oxygen vacancy, Deviatoric stress (Engineering), Computer engineering, Ferroelectric transitions, Density functional theory, Hafnium oxide, Nonvolatile memory |
| Abstract: | Hafnium oxide thin films have been extensively investigated for high-speed and low-power memory applications. Herein, we investigated the influence of oxygen vacancies and external stress on the ferroelectric characteristics of Al-doped HfO2 (HfAlO). Compared with HfAlO with 14% oxygen vacancies, films with 21% oxygen vacancies could lower the polarization switching barrier and increase the fraction of the ferroelectric phase. Furthermore, significant external stress promotes ferroelectric phase formation, thereby enhancing ferroelectric characteristics. The remanent polarization achieved with W electrodes (2Pr = 38 µC/cm2) is about 18 times that of Au electrodes, owing to the lower thermal expansion coefficient of W electrodes. Density functional theory calculations and finite element analysis provide theoretical insights corroborating the experimental results, helping to pave the way for developing hafnium-based materials for next-generation in-memory computing applications. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
| Abstract: | Hafnium oxide thin films have been extensively investigated for high-speed and low-power memory applications. Herein, we investigated the influence of oxygen vacancies and external stress on the ferroelectric characteristics of Al-doped HfO2 (HfAlO). Compared with HfAlO with 14% oxygen vacancies, films with 21% oxygen vacancies could lower the polarization switching barrier and increase the fraction of the ferroelectric phase. Furthermore, significant external stress promotes ferroelectric phase formation, thereby enhancing ferroelectric characteristics. The remanent polarization achieved with W electrodes (2Pr = 38 µC/cm2) is about 18 times that of Au electrodes, owing to the lower thermal expansion coefficient of W electrodes. Density functional theory calculations and finite element analysis provide theoretical insights corroborating the experimental results, helping to pave the way for developing hafnium-based materials for next-generation in-memory computing applications. [ABSTRACT FROM AUTHOR] |
|---|---|
| ISSN: | 20794991 |
| DOI: | 10.3390/nano16090516 |
