Enhanced Modulation of Terahertz Generation in Optically Pumped Silicon-Based CoFeB/Ir Heterostructures.

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Title: Enhanced Modulation of Terahertz Generation in Optically Pumped Silicon-Based CoFeB/Ir Heterostructures.
Authors: Peng, Ruijie1 (AUTHOR), Jin, Zuanming1,2 (AUTHOR), Jiang, Yexing1,3 (AUTHOR), Zhang, Huiping1 (AUTHOR), He, Wei2,3 (AUTHOR) hewei@iphy.ac.cn, Peng, Yan1,2,3 (AUTHOR)
Source: Nanomaterials (2079-4991). May2026, Vol. 16 Issue 9, p530. 12p.
Subjects: Heterostructures, Optical modulation, Spin Hall effect, Photothermal effect, Terahertz technology, Spintronics
Abstract: Silicon-compatible spintronic terahertz emitters (STEs) are crucial for on-chip ultrafast optoelectronic integration, yet their all-optical controllability remains a key challenge. Here, we fabricate a Ta-buffered CoFeB/Ir heterostructure on Si substrates and realize, for the first time, the enhancement and nonlinear modulation of coherent THz emission under continuous-wave (CW) optical pumping at room temperature. The THz emission, dominated by the inverse spin Hall effect, features an ultrabroad 0–2.5 THz bandwidth and robustness against femtosecond pump fluence and polarization variations. The all-optical modulation of THz generation originates from the competition between photothermal and photodoping effects in the Si substrate. The heterostructure-side pumping with a 450 nm CW laser yields an increased modulation of 46% at 2.546 W cm−2 due to the photothermal effect, while the Si substrate-side pumping at 780 nm leads to 21.3% THz emission suppression by photodoping. Moreover, the THz enhanced modulation efficiency peaks at an Ir layer thickness of 1.2 nm. Our work demonstrates an all-optical controllable Si-based THz source, providing critical insights for the design of next-generation on-chip THz functional devices. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
  Group: Ti
  Data: Enhanced Modulation of Terahertz Generation in Optically Pumped Silicon-Based CoFeB/Ir Heterostructures.
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  Data: <searchLink fieldCode="AR" term="%22Peng%2C+Ruijie%22">Peng, Ruijie</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jin%2C+Zuanming%22">Jin, Zuanming</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jiang%2C+Yexing%22">Jiang, Yexing</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Huiping%22">Zhang, Huiping</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22He%2C+Wei%22">He, Wei</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<i> hewei@iphy.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Peng%2C+Yan%22">Peng, Yan</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. May2026, Vol. 16 Issue 9, p530. 12p.
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  Data: <searchLink fieldCode="DE" term="%22Heterostructures%22">Heterostructures</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+modulation%22">Optical modulation</searchLink><br /><searchLink fieldCode="DE" term="%22Spin+Hall+effect%22">Spin Hall effect</searchLink><br /><searchLink fieldCode="DE" term="%22Photothermal+effect%22">Photothermal effect</searchLink><br /><searchLink fieldCode="DE" term="%22Terahertz+technology%22">Terahertz technology</searchLink><br /><searchLink fieldCode="DE" term="%22Spintronics%22">Spintronics</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Silicon-compatible spintronic terahertz emitters (STEs) are crucial for on-chip ultrafast optoelectronic integration, yet their all-optical controllability remains a key challenge. Here, we fabricate a Ta-buffered CoFeB/Ir heterostructure on Si substrates and realize, for the first time, the enhancement and nonlinear modulation of coherent THz emission under continuous-wave (CW) optical pumping at room temperature. The THz emission, dominated by the inverse spin Hall effect, features an ultrabroad 0–2.5 THz bandwidth and robustness against femtosecond pump fluence and polarization variations. The all-optical modulation of THz generation originates from the competition between photothermal and photodoping effects in the Si substrate. The heterostructure-side pumping with a 450 nm CW laser yields an increased modulation of 46% at 2.546 W cm−2 due to the photothermal effect, while the Si substrate-side pumping at 780 nm leads to 21.3% THz emission suppression by photodoping. Moreover, the THz enhanced modulation efficiency peaks at an Ir layer thickness of 1.2 nm. Our work demonstrates an all-optical controllable Si-based THz source, providing critical insights for the design of next-generation on-chip THz functional devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano16090530
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      – Code: eng
        Text: English
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        PageCount: 12
        StartPage: 530
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      – SubjectFull: Heterostructures
        Type: general
      – SubjectFull: Optical modulation
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      – SubjectFull: Spin Hall effect
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      – SubjectFull: Photothermal effect
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      – SubjectFull: Terahertz technology
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      – SubjectFull: Spintronics
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      – TitleFull: Enhanced Modulation of Terahertz Generation in Optically Pumped Silicon-Based CoFeB/Ir Heterostructures.
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            NameFull: Peng, Ruijie
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            NameFull: Jin, Zuanming
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            NameFull: Jiang, Yexing
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            NameFull: Zhang, Huiping
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            NameFull: He, Wei
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            – D: 01
              M: 05
              Text: May2026
              Type: published
              Y: 2026
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