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Temperature-resilient linearity performance of a channel-pocket-engineered SiGe-InGaAs heterojunction TFET for RF range analog devices.

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Title: Temperature-resilient linearity performance of a channel-pocket-engineered SiGe-InGaAs heterojunction TFET for RF range analog devices.
Authors: Verma, Shubham1 (AUTHOR) shubham.2020rel07@mnnit.ac.in, Yadav, Vimal Kumar Singh2 (AUTHOR), Rai, Sanjeev1 (AUTHOR)
Source: International Journal of Electronics Letters. Jun2026, Vol. 14 Issue 2, p150-162. 13p.
Subjects: Tunnel field-effect transistors, Heterojunctions, Quantum tunneling, Analog electronic systems, Thermal noise, Thermal stability
Abstract: This paper analyses the effect of temperature variation on the analog/RF characteristics, linearity and harmonic distortion properties of a channel-pocket-engineered, Si $_{0.8}$ 0.8 Ge $_{0.2}$ 0.2 -In $_{0.7}$ 0.7 Ga $_{0.3}$ 0.3 As source-based heterojunction tunnel field effect transistor (H-TFET). Heterojunctions based on InGaAs and SiGe materials are taken into consideration to enhance the tunneling mechanism and optimise the device behaviour. It is observed that band-to-band tunneling becomes significant at higher gate voltages and shows minimal sensitivity to temperature changes. The reported device achieves excellent I $_{ON}$ ON /I $_{OFF}$ OFF = 1.26 × 10 $^{13}$ 13 , subthreshold swing of 19.1 mV/decade, transconductance of 1.69 mS and cut-off frequency of 83.41 GHz at 300 K, which are significantly higher than the recently reported TFETs. Variations in the analog/RF, linearity and harmonic distortion parameters along with thermal noise are analysed and found that the variation is minimal for a wide temperature range from 200 K to 500 K. The overall findings indicate that the proposed H-TFET exhibits superior analog performance and linearity both at room temperature and higher temperature levels. [ABSTRACT FROM AUTHOR]
Copyright of International Journal of Electronics Letters is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Label: Title
  Group: Ti
  Data: Temperature-resilient linearity performance of a channel-pocket-engineered SiGe-InGaAs heterojunction TFET for RF range analog devices.
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  Data: <searchLink fieldCode="AR" term="%22Verma%2C+Shubham%22">Verma, Shubham</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> shubham.2020rel07@mnnit.ac.in</i><br /><searchLink fieldCode="AR" term="%22Yadav%2C+Vimal+Kumar+Singh%22">Yadav, Vimal Kumar Singh</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Rai%2C+Sanjeev%22">Rai, Sanjeev</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Electronics+Letters%22">International Journal of Electronics Letters</searchLink>. Jun2026, Vol. 14 Issue 2, p150-162. 13p.
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  Data: <searchLink fieldCode="DE" term="%22Tunnel+field-effect+transistors%22">Tunnel field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Heterojunctions%22">Heterojunctions</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+tunneling%22">Quantum tunneling</searchLink><br /><searchLink fieldCode="DE" term="%22Analog+electronic+systems%22">Analog electronic systems</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+noise%22">Thermal noise</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+stability%22">Thermal stability</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This paper analyses the effect of temperature variation on the analog/RF characteristics, linearity and harmonic distortion properties of a channel-pocket-engineered, Si $_{0.8}$ 0.8 Ge $_{0.2}$ 0.2 -In $_{0.7}$ 0.7 Ga $_{0.3}$ 0.3 As source-based heterojunction tunnel field effect transistor (H-TFET). Heterojunctions based on InGaAs and SiGe materials are taken into consideration to enhance the tunneling mechanism and optimise the device behaviour. It is observed that band-to-band tunneling becomes significant at higher gate voltages and shows minimal sensitivity to temperature changes. The reported device achieves excellent I $_{ON}$ ON /I $_{OFF}$ OFF = 1.26 × 10 $^{13}$ 13 , subthreshold swing of 19.1 mV/decade, transconductance of 1.69 mS and cut-off frequency of 83.41 GHz at 300 K, which are significantly higher than the recently reported TFETs. Variations in the analog/RF, linearity and harmonic distortion parameters along with thermal noise are analysed and found that the variation is minimal for a wide temperature range from 200 K to 500 K. The overall findings indicate that the proposed H-TFET exhibits superior analog performance and linearity both at room temperature and higher temperature levels. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of International Journal of Electronics Letters is the property of Taylor & Francis Ltd and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1080/21681724.2025.2599119
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      – Code: eng
        Text: English
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        PageCount: 13
        StartPage: 150
    Subjects:
      – SubjectFull: Tunnel field-effect transistors
        Type: general
      – SubjectFull: Heterojunctions
        Type: general
      – SubjectFull: Quantum tunneling
        Type: general
      – SubjectFull: Analog electronic systems
        Type: general
      – SubjectFull: Thermal noise
        Type: general
      – SubjectFull: Thermal stability
        Type: general
    Titles:
      – TitleFull: Temperature-resilient linearity performance of a channel-pocket-engineered SiGe-InGaAs heterojunction TFET for RF range analog devices.
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            NameFull: Verma, Shubham
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            NameFull: Yadav, Vimal Kumar Singh
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          Name:
            NameFull: Rai, Sanjeev
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            – D: 01
              M: 06
              Text: Jun2026
              Type: published
              Y: 2026
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