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Enhanced performance of non-stoichiometric BZN-based thin film varactor through surface electric field effect.

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Title: Enhanced performance of non-stoichiometric BZN-based thin film varactor through surface electric field effect.
Authors: Lei, Xueqing1,2,3 (AUTHOR), Dong, Helei1,2,3 (AUTHOR) donghelei@nuc.edu.cn, Yuan, Mengyu1,2,3 (AUTHOR), Peng, Hongyu1,2,3 (AUTHOR), Guo, Xinwei1,2,3 (AUTHOR), Liang, Siyu1,2,3 (AUTHOR), Tan, Qiulin1,2,3 (AUTHOR) tanqiulin@nuc.edu.cn
Source: Ceramics International. Jun2026:Part A, Vol. 52 Issue 14, p24381-24389. 9p.
Subjects: Pyrochlore, Electric field effects, Sol-gel processes, Metal insulator semiconductors, Thin films, Electrodes, Dielectric properties
Abstract: In this work, Bi-Zn-Nb base cubic pyrochlore with A 2 B 2 O 7 structure was purposefully trimmed to make Zn ions in the A site slightly deviate from stoichiometric ratios, and non-stoichiometric (Bi 1.5 Zn 0.5+x)(Zn 0.5 Nb 1.5)O 7.0+x (BZN, −0.15 ≤ x ≤ 0.05) thin films were fabricated on FTO (fluorine-doped tin oxide) electrodes using the sol-gel process. The structural characterization results confirmed that the phase structure of the BZN films remained cubic pyrochlore after little composition shift. It was found that proper reduction of Zn content can optimize the performance of BZN films, and thin film with a composition corresponding to x = −0.1 demonstrated optimal crystallinity and superior dielectric properties. More specifically, this film exhibited a high tunability of 19.26% (1.17 MV/cm), relatively low loss tangent of 0.0089, and a large figure of merit of 21.6. Furthermore, by introducing the semiconductor FTO as the bottom electrode, the coefficient of the dielectric nonlinearity β for the sol-gel BZN film has been optimized, which is 180% of higher than that of on metal Pt electrode. The excellent properties are attributed to the combination effect of the intrinsic tuning characteristic of non-stoichiometric BZN cubic pyrochlore and the surface electric field effect in Metal Insulator Semiconductor (MIS) structure. This research provides a promising approach to boost the performance of functional thin film electronic devices. [ABSTRACT FROM AUTHOR]
Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Enhanced performance of non-stoichiometric BZN-based thin film varactor through surface electric field effect.
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  Data: <searchLink fieldCode="AR" term="%22Lei%2C+Xueqing%22">Lei, Xueqing</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Dong%2C+Helei%22">Dong, Helei</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<i> donghelei@nuc.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Yuan%2C+Mengyu%22">Yuan, Mengyu</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Peng%2C+Hongyu%22">Peng, Hongyu</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Guo%2C+Xinwei%22">Guo, Xinwei</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liang%2C+Siyu%22">Liang, Siyu</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tan%2C+Qiulin%22">Tan, Qiulin</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<i> tanqiulin@nuc.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Ceramics+International%22">Ceramics International</searchLink>. Jun2026:Part A, Vol. 52 Issue 14, p24381-24389. 9p.
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  Data: <searchLink fieldCode="DE" term="%22Pyrochlore%22">Pyrochlore</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+field+effects%22">Electric field effects</searchLink><br /><searchLink fieldCode="DE" term="%22Sol-gel+processes%22">Sol-gel processes</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+insulator+semiconductors%22">Metal insulator semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Electrodes%22">Electrodes</searchLink><br /><searchLink fieldCode="DE" term="%22Dielectric+properties%22">Dielectric properties</searchLink>
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  Label: Abstract
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  Data: In this work, Bi-Zn-Nb base cubic pyrochlore with A 2 B 2 O 7 structure was purposefully trimmed to make Zn ions in the A site slightly deviate from stoichiometric ratios, and non-stoichiometric (Bi 1.5 Zn 0.5+x)(Zn 0.5 Nb 1.5)O 7.0+x (BZN, −0.15 ≤ x ≤ 0.05) thin films were fabricated on FTO (fluorine-doped tin oxide) electrodes using the sol-gel process. The structural characterization results confirmed that the phase structure of the BZN films remained cubic pyrochlore after little composition shift. It was found that proper reduction of Zn content can optimize the performance of BZN films, and thin film with a composition corresponding to x = −0.1 demonstrated optimal crystallinity and superior dielectric properties. More specifically, this film exhibited a high tunability of 19.26% (1.17 MV/cm), relatively low loss tangent of 0.0089, and a large figure of merit of 21.6. Furthermore, by introducing the semiconductor FTO as the bottom electrode, the coefficient of the dielectric nonlinearity β for the sol-gel BZN film has been optimized, which is 180% of higher than that of on metal Pt electrode. The excellent properties are attributed to the combination effect of the intrinsic tuning characteristic of non-stoichiometric BZN cubic pyrochlore and the surface electric field effect in Metal Insulator Semiconductor (MIS) structure. This research provides a promising approach to boost the performance of functional thin film electronic devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Ceramics International is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.ceramint.2026.03.472
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      – Code: eng
        Text: English
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        StartPage: 24381
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      – SubjectFull: Electric field effects
        Type: general
      – SubjectFull: Sol-gel processes
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      – SubjectFull: Metal insulator semiconductors
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      – SubjectFull: Thin films
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      – SubjectFull: Electrodes
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      – SubjectFull: Dielectric properties
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      – TitleFull: Enhanced performance of non-stoichiometric BZN-based thin film varactor through surface electric field effect.
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              Text: Jun2026:Part A
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              Y: 2026
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