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Ion-Stimulated Surface Diffusion.

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Title: Ion-Stimulated Surface Diffusion.
Authors: Fadeev, A. V.1 (AUTHOR) AlexVFadeev@gmail.com, Devyatko, Yu. N.1 (AUTHOR)
Source: Russian Microelectronics. Feb2026, Vol. 55 Issue 1, p66-73. 8p.
Subjects: Surface diffusion, Ion beams, Irradiation, Temperature effect, Semiconductor materials, Microelectronics, Noble gases
Abstract: Irradiation of surfaces with low-energy ions is an integral part of a number of technological operations in microelectronics. This paper proposes a model that can explain the change in the surface diffusion coefficient of Ge, adsorbed on Si(111), with increasing temperature under the influence of a low-energy ion flow of noble gases. [ABSTRACT FROM AUTHOR]
Copyright of Russian Microelectronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 194042742
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Ion-Stimulated Surface Diffusion.
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  Data: <searchLink fieldCode="AR" term="%22Fadeev%2C+A%2E+V%2E%22">Fadeev, A. V.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> AlexVFadeev@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Devyatko%2C+Yu%2E+N%2E%22">Devyatko, Yu. N.</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Russian+Microelectronics%22">Russian Microelectronics</searchLink>. Feb2026, Vol. 55 Issue 1, p66-73. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Surface+diffusion%22">Surface diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Ion+beams%22">Ion beams</searchLink><br /><searchLink fieldCode="DE" term="%22Irradiation%22">Irradiation</searchLink><br /><searchLink fieldCode="DE" term="%22Temperature+effect%22">Temperature effect</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+materials%22">Semiconductor materials</searchLink><br /><searchLink fieldCode="DE" term="%22Microelectronics%22">Microelectronics</searchLink><br /><searchLink fieldCode="DE" term="%22Noble+gases%22">Noble gases</searchLink>
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  Label: Abstract
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  Data: Irradiation of surfaces with low-energy ions is an integral part of a number of technological operations in microelectronics. This paper proposes a model that can explain the change in the surface diffusion coefficient of Ge, adsorbed on Si(111), with increasing temperature under the influence of a low-energy ion flow of noble gases. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Russian Microelectronics is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1134/S1063739726600081
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 66
    Subjects:
      – SubjectFull: Surface diffusion
        Type: general
      – SubjectFull: Ion beams
        Type: general
      – SubjectFull: Irradiation
        Type: general
      – SubjectFull: Temperature effect
        Type: general
      – SubjectFull: Semiconductor materials
        Type: general
      – SubjectFull: Microelectronics
        Type: general
      – SubjectFull: Noble gases
        Type: general
    Titles:
      – TitleFull: Ion-Stimulated Surface Diffusion.
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              Text: Feb2026
              Type: published
              Y: 2026
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            – TitleFull: Russian Microelectronics
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