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RHEED investigation of the self-assembly of InAs quantum dots on AlGaAs.

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Title: RHEED investigation of the self-assembly of InAs quantum dots on AlGaAs.
Authors: Espinosa-Vega, L.I.1 (AUTHOR), Yépez-Barradas, G.1 (AUTHOR), Cortés-Mestizo, I.E1,2 (AUTHOR), Vilchis, Daniel1 (AUTHOR), Mora-Herrera, M.F.1 (AUTHOR), Vázquez-Cortés, David3 (AUTHOR), LaGrow, Alec P.3 (AUTHOR), Cuellar-Camacho, J.L.2,4 (AUTHOR), Ruíz-García, J.5 (AUTHOR), Méndez-García, Víctor H.1 (AUTHOR) victor.mendez@uaslp.mx
Source: Journal of Crystal Growth. Sep2026, Vol. 690, pN.PAG-N.PAG. 1p.
Subjects: Reflection high energy electron diffraction, Nucleation, Nanofabrication, Quantum dots, Diffusion kinetics, Ternary alloys, Molecular beam epitaxy
Abstract: • Critical thickness remains nearly constant across Al x Ga 1−x As. • Weak dependence of nucleation onset challenges classical models. • Nucleation shifts toward diffusion-limited regime with Al content. • QD density and morphology correlate with nucleation dynamics. • Decoupled roles of strain and kinetics govern QD formation. The growth of InAs QDs on Al x Ga 1−x As layers with systematically varied Al molar fraction using molecular beam epitaxy is investigated. The growth process is monitored in situ by reflection high-energy electron diffraction (RHEED), enabling a detailed analysis of the nucleation dynamics, the critical thickness for the two-dimensional to three-dimensional (2D–3D) transition, and diffusion-related kinetic parameters within a single stacked heterostructure. Contrary to previously reported investigations performed on single heterostructures, the critical thickness of InAs on AlGaAs is found to remain nearly constant for intermediate Al content, exhibiting only minor variations, while a modest increase is observed in the AlAs limit (x = 1). Diffusion-related parameters extracted from the RHEED intensity evolution display a slight but clear dependence on the aluminum composition, indicating a progressive transition toward diffusion-limited growth. These kinetic effects are further correlated with changes in the initial surface roughness. It is also found that surface diffusion during growth, which presumably varies with Al content, has direct consequences on the pyramidal shape of the nano islands. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 194046629
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: RHEED investigation of the self-assembly of InAs quantum dots on AlGaAs.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Espinosa-Vega%2C+L%2EI%2E%22">Espinosa-Vega, L.I.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yépez-Barradas%2C+G%2E%22">Yépez-Barradas, G.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cortés-Mestizo%2C+I%2EE%22">Cortés-Mestizo, I.E</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Vilchis%2C+Daniel%22">Vilchis, Daniel</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mora-Herrera%2C+M%2EF%2E%22">Mora-Herrera, M.F.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Vázquez-Cortés%2C+David%22">Vázquez-Cortés, David</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22LaGrow%2C+Alec+P%2E%22">LaGrow, Alec P.</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cuellar-Camacho%2C+J%2EL%2E%22">Cuellar-Camacho, J.L.</searchLink><relatesTo>2,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ruíz-García%2C+J%2E%22">Ruíz-García, J.</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Méndez-García%2C+Víctor+H%2E%22">Méndez-García, Víctor H.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> victor.mendez@uaslp.mx</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Crystal+Growth%22">Journal of Crystal Growth</searchLink>. Sep2026, Vol. 690, pN.PAG-N.PAG. 1p.
– Name: Subject
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  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Reflection+high+energy+electron+diffraction%22">Reflection high energy electron diffraction</searchLink><br /><searchLink fieldCode="DE" term="%22Nucleation%22">Nucleation</searchLink><br /><searchLink fieldCode="DE" term="%22Nanofabrication%22">Nanofabrication</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+dots%22">Quantum dots</searchLink><br /><searchLink fieldCode="DE" term="%22Diffusion+kinetics%22">Diffusion kinetics</searchLink><br /><searchLink fieldCode="DE" term="%22Ternary+alloys%22">Ternary alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: • Critical thickness remains nearly constant across Al x Ga 1−x As. • Weak dependence of nucleation onset challenges classical models. • Nucleation shifts toward diffusion-limited regime with Al content. • QD density and morphology correlate with nucleation dynamics. • Decoupled roles of strain and kinetics govern QD formation. The growth of InAs QDs on Al x Ga 1−x As layers with systematically varied Al molar fraction using molecular beam epitaxy is investigated. The growth process is monitored in situ by reflection high-energy electron diffraction (RHEED), enabling a detailed analysis of the nucleation dynamics, the critical thickness for the two-dimensional to three-dimensional (2D–3D) transition, and diffusion-related kinetic parameters within a single stacked heterostructure. Contrary to previously reported investigations performed on single heterostructures, the critical thickness of InAs on AlGaAs is found to remain nearly constant for intermediate Al content, exhibiting only minor variations, while a modest increase is observed in the AlAs limit (x = 1). Diffusion-related parameters extracted from the RHEED intensity evolution display a slight but clear dependence on the aluminum composition, indicating a progressive transition toward diffusion-limited growth. These kinetic effects are further correlated with changes in the initial surface roughness. It is also found that surface diffusion during growth, which presumably varies with Al content, has direct consequences on the pyramidal shape of the nano islands. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=194046629
RecordInfo BibRecord:
  BibEntity:
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      – Type: doi
        Value: 10.1016/j.jcrysgro.2026.128639
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Subjects:
      – SubjectFull: Reflection high energy electron diffraction
        Type: general
      – SubjectFull: Nucleation
        Type: general
      – SubjectFull: Nanofabrication
        Type: general
      – SubjectFull: Quantum dots
        Type: general
      – SubjectFull: Diffusion kinetics
        Type: general
      – SubjectFull: Ternary alloys
        Type: general
      – SubjectFull: Molecular beam epitaxy
        Type: general
    Titles:
      – TitleFull: RHEED investigation of the self-assembly of InAs quantum dots on AlGaAs.
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            NameFull: Espinosa-Vega, L.I.
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            – D: 01
              M: 09
              Text: Sep2026
              Type: published
              Y: 2026
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              Value: 690
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            – TitleFull: Journal of Crystal Growth
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