Enhanced Performance of an Au/MoS 2 /GaAs Photodetector by Room-Temperature Metal Electrode Transfer.
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| Title: | Enhanced Performance of an Au/MoS 2 /GaAs Photodetector by Room-Temperature Metal Electrode Transfer. |
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| Authors: | Li, Chunxia1 (AUTHOR), Jiang, Weichao2 (AUTHOR), Qiu, Cong1 (AUTHOR), Xu, Jingping2 (AUTHOR) jpxu@hust.edu.cn |
| Source: | Nanomaterials (2079-4991). May2026, Vol. 16 Issue 10, p624. 11p. |
| Subjects: | Photodetectors, Heterojunctions, Thin film deposition, Photoelectricity |
| Abstract: | Recently, self-powered MoS2/GaAs photodetectors have attracted intensive attention. However, thermal processing following metal–electrode deposition tends to damage the lattice structure of MoS2, leading to degraded device performance and poor consistency. In this work, Au/MoS2/GaAs photodetectors are fabricated using two different methods of transferring Au (Tr-Au) and thermal evaporation Au (TE-Au), and their photoelectric performances are compared. It is found that, compared to TE-Au devices, the Tr-Au devices exhibit higher responsivity (45.29 A/W) and detectivity (3.11 × 1013 Jones). The underlying mechanisms are attributed to a significant reduction in defect traps in MoS2 and a smooth MoS2/GaAs heterojunction interface, which collectively increase photocurrent and suppress dark current. Therefore, the room-temperature Au transfer method shows great promise for the fabrication of high-performance optoelectronic devices. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 194120606 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Enhanced Performance of an Au/MoS 2 /GaAs Photodetector by Room-Temperature Metal Electrode Transfer. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Li%2C+Chunxia%22">Li, Chunxia</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jiang%2C+Weichao%22">Jiang, Weichao</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Qiu%2C+Cong%22">Qiu, Cong</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xu%2C+Jingping%22">Xu, Jingping</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> jpxu@hust.edu.cn</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. May2026, Vol. 16 Issue 10, p624. 11p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Photodetectors%22">Photodetectors</searchLink><br /><searchLink fieldCode="DE" term="%22Heterojunctions%22">Heterojunctions</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+film+deposition%22">Thin film deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Photoelectricity%22">Photoelectricity</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Recently, self-powered MoS2/GaAs photodetectors have attracted intensive attention. However, thermal processing following metal–electrode deposition tends to damage the lattice structure of MoS2, leading to degraded device performance and poor consistency. In this work, Au/MoS2/GaAs photodetectors are fabricated using two different methods of transferring Au (Tr-Au) and thermal evaporation Au (TE-Au), and their photoelectric performances are compared. It is found that, compared to TE-Au devices, the Tr-Au devices exhibit higher responsivity (45.29 A/W) and detectivity (3.11 × 1013 Jones). The underlying mechanisms are attributed to a significant reduction in defect traps in MoS2 and a smooth MoS2/GaAs heterojunction interface, which collectively increase photocurrent and suppress dark current. Therefore, the room-temperature Au transfer method shows great promise for the fabrication of high-performance optoelectronic devices. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=194120606 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/nano16100624 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 11 StartPage: 624 Subjects: – SubjectFull: Photodetectors Type: general – SubjectFull: Heterojunctions Type: general – SubjectFull: Thin film deposition Type: general – SubjectFull: Photoelectricity Type: general Titles: – TitleFull: Enhanced Performance of an Au/MoS 2 /GaAs Photodetector by Room-Temperature Metal Electrode Transfer. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Li, Chunxia – PersonEntity: Name: NameFull: Jiang, Weichao – PersonEntity: Name: NameFull: Qiu, Cong – PersonEntity: Name: NameFull: Xu, Jingping IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 05 Text: May2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 20794991 Numbering: – Type: volume Value: 16 – Type: issue Value: 10 Titles: – TitleFull: Nanomaterials (2079-4991) Type: main |
| ResultId | 1 |
