Heteroepitaxy of MOCVD grown MoS2 and WS2 multilayers on AlN(0001)/sapphire(0001) characterized by azimuthal RHEED.
Saved in:
| Title: | Heteroepitaxy of MOCVD grown MoS2 and WS2 multilayers on AlN(0001)/sapphire(0001) characterized by azimuthal RHEED. |
|---|---|
| Authors: | Kumari, Shalini1,2 (AUTHOR), Lin, Weichang3,4 (AUTHOR), Dhull, Neha3,4 (AUTHOR), Lu, Zonghuan3,4 (AUTHOR), Lee, Seung Hoon2 (AUTHOR), Redwing, Joan1,2 (AUTHOR), Lu, Toh-Ming3,4 (AUTHOR), Wang, Gwo-Ching1,3,4 (AUTHOR) wangg@rpi.edu |
| Source: | Physica E. Jul2026, Vol. 182, pN.PAG-N.PAG. 1p. |
| Subjects: | Reflection high energy electron diffraction, Molybdenum disulfide, Aluminum nitride, Epitaxy, Sulfides, Metal organic chemical vapor deposition, Transition metal chalcogenides, Substrates (Materials science) |
| Abstract: | Wafer scale transition metal dichalcogenides (TMDCs), MoS 2 and WS 2 multilayers grown by metalorganic chemical vapor deposition (MOCVD) on template AlN/sapphire (0001) substrates were characterized by azimuthal reflection high-energy electron diffraction (ARHEED). Each TMDC has a small lattice mismatch (<2 %) with AlN. The atomic force microscopy images show features of multilayers. The ARHEED patterns from MoS 2 on AlN and WS 2 on AlN show stripes, spots, and short arcs. The periodic intensity modulations of spots provides lattice parameters of TMDCs and AlN. The 2D maps constructed from ARHEED patterns show additional intensity spots between adjacent hk lattice sites of the 6-fold symmetry of epitaxial MoS 2 and WS 2. The locations of these additional intensity spots also depend on the values of momentum transfer of diffracted electron wavevectors. These spots are from MoS 2 and WS 2 multilayers and AlN nanocrystals. These findings indicate co-existence of TMDCs multilayers and AlN nanocrystals. The finding of heteroepitaxy TMDCs multilayers beyond monolayer broadens the applications of ARHEED and serves as a first step towards optimizing growth conditions for the TMDC multilayer as a buffer layer for the growth of detachable and flexible AlN epitaxial film under the concept of van der Waals epitaxy. • Azimuthal RHEED characterization of epitaxial MoS 2 and WS 2 multilayers on AlN. • RHEED patterns of MoS 2 and WS 2 multilayers show stripes, spots, and arcs. • Lattice parameters of MoS 2 , WS 2 and AlN are measured from RHEED patterns. • Small out-of-plane angular dispersion of AlN is measured from arc in RHEED patterns. • 2D maps of MoS 2 and WS 2 on AlN show spots between certain adjacent hk lattice sites. [ABSTRACT FROM AUTHOR] |
| Copyright of Physica E is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
Be the first to leave a comment!
