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Engineering dielectric constant and breakdown strength in Tm2O3 thin films through nitrogen-controlled two-step annealing.

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Title: Engineering dielectric constant and breakdown strength in Tm2O3 thin films through nitrogen-controlled two-step annealing.
Authors: Deng, Junchen1,2 (AUTHOR), Gaos, Ashraf Mohamad2 (AUTHOR), Quah, Hock Jin1,2 (AUTHOR) hock_jin@usm.my
Source: Ceramics International. Jun2026:Part B, Vol. 52 Issue 15, p29758-29769. 12p.
Subjects: Rapid thermal processing, Dielectric strength, Radiofrequency sputtering, Substrates (Materials science), Thin films, Permittivity
Abstract: Thulium oxide (Tm 2 O 3) was a promising high dielectric constant (k) material, whose functional properties critically depended on its structure and defect density. This work investigated a novel two-step annealing process, which combined rapid thermal annealing (RTA) with furnace annealing in controlled ambient to engineer the structural and electrical characteristics of Tm 2 O 3 passivation layers deposited on silicon (Si) substrates by radio frequency magnetron sputtering. The strategy combined RTA in nitrogen at temperatures from 700 to 1000°C with a subsequent nitrogen-oxygen-nitrogen furnace annealing at 700°C. It was demonstrated that the RTA temperature critically governed nitrogen incorporation, dictating its site selectivity within the Tm 2 O 3 lattice. At 800°C, an optimal balance was achieved in which nitrogen substituted for oxygen and diffused to the Tm 2 O 3 /Si interface, forming a robust barrier that suppressed the growth of a low- k silicon dioxide (SiO 2) interfacial layer. This sample exhibited superior performance, including the highest k (16.1) value, the lowest slow trap density, a moderate positive effective oxide charge, and a superior breakdown field. In contrast, RTA temperature of 1000°C triggered severe thermal desorption of nitrogen and thulium, which decomposed the passivation layer and resulted in an excessive growth of the SiO 2 interfacial layer, thereby degrading the overall passivating characteristics. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:Thulium oxide (Tm 2 O 3) was a promising high dielectric constant (k) material, whose functional properties critically depended on its structure and defect density. This work investigated a novel two-step annealing process, which combined rapid thermal annealing (RTA) with furnace annealing in controlled ambient to engineer the structural and electrical characteristics of Tm 2 O 3 passivation layers deposited on silicon (Si) substrates by radio frequency magnetron sputtering. The strategy combined RTA in nitrogen at temperatures from 700 to 1000°C with a subsequent nitrogen-oxygen-nitrogen furnace annealing at 700°C. It was demonstrated that the RTA temperature critically governed nitrogen incorporation, dictating its site selectivity within the Tm 2 O 3 lattice. At 800°C, an optimal balance was achieved in which nitrogen substituted for oxygen and diffused to the Tm 2 O 3 /Si interface, forming a robust barrier that suppressed the growth of a low- k silicon dioxide (SiO 2) interfacial layer. This sample exhibited superior performance, including the highest k (16.1) value, the lowest slow trap density, a moderate positive effective oxide charge, and a superior breakdown field. In contrast, RTA temperature of 1000°C triggered severe thermal desorption of nitrogen and thulium, which decomposed the passivation layer and resulted in an excessive growth of the SiO 2 interfacial layer, thereby degrading the overall passivating characteristics. [ABSTRACT FROM AUTHOR]
ISSN:02728842
DOI:10.1016/j.ceramint.2026.05.058