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Bandgap engineering and highly isotropic mobility in Ge-doped ferroelectric-zinc blende phase Ga2O3 monolayer.

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Title: Bandgap engineering and highly isotropic mobility in Ge-doped ferroelectric-zinc blende phase Ga2O3 monolayer.
Authors: Zeng, H1 (AUTHOR) hzeng@huse.edu.cn, Tang, W2 (AUTHOR), Ma, C3 (AUTHOR), Wu, P1 (AUTHOR), Gao, H X1 (AUTHOR) haixiagao@huse.edu.cn, Xue, Y R1 (AUTHOR), Wu, M2 (AUTHOR) meng.wu@xmu.edu.cn
Source: Nanotechnology. 2026, Vol. 37 Issue 22, p1-14. 14p.
Subjects: Band gaps, Electron mobility, Two-dimensional materials (Nanotechnology), Nanoelectronics, Symmetry, Strains & stresses (Mechanics), Germanium compounds, Ferroelectric materials
Abstract: The structural, electronic, and transport characteristics of Ge-doped ferroelectric-zinc blende phase (FZB)-Ga2O3 monolayer are systematically investigated by first-principles calculations, complemented by deformation potential theory and Boltzmann transport theory. Ge dopant preferentially occupies the six-coordinated GaII site with an excellent thermodynamic stability under O-rich condition. The higher electronegativity and the smaller ionic radius of Ge4+ relative to Ga3+ promote the stronger Ge–O ionic bonding than that of Ga–O bonds, accompanying with the substantial electron depletion of Ge dopant to the system (losing ∼2.30e quantitatively). A pronounced downward displacement of conduction band minimum (CBM) suggests the n -type conductivity. Applying biaxial strains from –6% to 6%, the bandgap undergoes a steep drop from 3.98 eV to 2.62 eV, which is primarily attributable to the band shifts due to the variations of Ge–O bond lengths. The electron mobility retains strong isotropy under ±6% strain modulations, where the highest μ ex and μ ey are of respectively 965.55cm2 V–1s–1 and 1093.09 cm2 V–1s–1 under +4% strain. Moreover, the mobility anisotropy values range from 1.04 to 1.16, illustrating a robust degree of isotropy. Electrical conductivities show the similar trends with the variations of electron mobility. Our present work demonstrates the pronounced tunability of bandgap and highly isotropic electron mobility in Ge-doped 2D FZB-Ga2O3 monolayer, which underscores its strong potential for applications in nanoscale electronic devices. [ABSTRACT FROM AUTHOR]
Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Bandgap engineering and highly isotropic mobility in Ge-doped ferroelectric-zinc blende phase Ga<subscript>2</subscript>O<subscript>3</subscript> monolayer.
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  Data: <searchLink fieldCode="AR" term="%22Zeng%2C+H%22">Zeng, H</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> hzeng@huse.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Tang%2C+W%22">Tang, W</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ma%2C+C%22">Ma, C</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wu%2C+P%22">Wu, P</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gao%2C+H+X%22">Gao, H X</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> haixiagao@huse.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Xue%2C+Y+R%22">Xue, Y R</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wu%2C+M%22">Wu, M</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> meng.wu@xmu.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanotechnology%22">Nanotechnology</searchLink>. 2026, Vol. 37 Issue 22, p1-14. 14p.
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  Data: <searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+mobility%22">Electron mobility</searchLink><br /><searchLink fieldCode="DE" term="%22Two-dimensional+materials+%28Nanotechnology%29%22">Two-dimensional materials (Nanotechnology)</searchLink><br /><searchLink fieldCode="DE" term="%22Nanoelectronics%22">Nanoelectronics</searchLink><br /><searchLink fieldCode="DE" term="%22Symmetry%22">Symmetry</searchLink><br /><searchLink fieldCode="DE" term="%22Strains+%26+stresses+%28Mechanics%29%22">Strains & stresses (Mechanics)</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium+compounds%22">Germanium compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Ferroelectric+materials%22">Ferroelectric materials</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: The structural, electronic, and transport characteristics of Ge-doped ferroelectric-zinc blende phase (FZB)-Ga2O3 monolayer are systematically investigated by first-principles calculations, complemented by deformation potential theory and Boltzmann transport theory. Ge dopant preferentially occupies the six-coordinated GaII site with an excellent thermodynamic stability under O-rich condition. The higher electronegativity and the smaller ionic radius of Ge4+ relative to Ga3+ promote the stronger Ge–O ionic bonding than that of Ga–O bonds, accompanying with the substantial electron depletion of Ge dopant to the system (losing ∼2.30e quantitatively). A pronounced downward displacement of conduction band minimum (CBM) suggests the n -type conductivity. Applying biaxial strains from –6% to 6%, the bandgap undergoes a steep drop from 3.98 eV to 2.62 eV, which is primarily attributable to the band shifts due to the variations of Ge–O bond lengths. The electron mobility retains strong isotropy under ±6% strain modulations, where the highest μ ex and μ ey are of respectively 965.55cm2 V–1s–1 and 1093.09 cm2 V–1s–1 under +4% strain. Moreover, the mobility anisotropy values range from 1.04 to 1.16, illustrating a robust degree of isotropy. Electrical conductivities show the similar trends with the variations of electron mobility. Our present work demonstrates the pronounced tunability of bandgap and highly isotropic electron mobility in Ge-doped 2D FZB-Ga2O3 monolayer, which underscores its strong potential for applications in nanoscale electronic devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1088/1361-6528/ae6f21
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      – Code: eng
        Text: English
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        PageCount: 14
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      – SubjectFull: Band gaps
        Type: general
      – SubjectFull: Electron mobility
        Type: general
      – SubjectFull: Two-dimensional materials (Nanotechnology)
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      – SubjectFull: Nanoelectronics
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      – SubjectFull: Symmetry
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      – SubjectFull: Strains & stresses (Mechanics)
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      – SubjectFull: Germanium compounds
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      – SubjectFull: Ferroelectric materials
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    Titles:
      – TitleFull: Bandgap engineering and highly isotropic mobility in Ge-doped ferroelectric-zinc blende phase Ga2O3 monolayer.
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              M: 06
              Text: 2026
              Type: published
              Y: 2026
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