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Metalorganic vapor phase epitaxy of β-(AlxGa1−x)2O3 (x = 0–0.55) and multilayer structure on (100) β-(Al0.24Ga0.76)2O3 substrates.

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Title: Metalorganic vapor phase epitaxy of β-(AlxGa1−x)2O3 (x = 0–0.55) and multilayer structure on (100) β-(Al0.24Ga0.76)2O3 substrates.
Authors: Bin Anooz, Saud1 (AUTHOR) saud.binanooz@ikz-berlin.de, Akhtar, Arub1 (AUTHOR), Chou, Ta-Shun1 (AUTHOR), Galazka, Zbigniew1 (AUTHOR), Schmidbauer, Martin1 (AUTHOR), Remmele, Thilo1 (AUTHOR), Albrecht, Martin1 (AUTHOR), Fiedler, Andreas1 (AUTHOR), Popp, Andreas1 (AUTHOR)
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. May2026, Vol. 44 Issue 3, p1-8. 8p.
Subjects: Epitaxy, Multilayers, X-ray diffraction, Thin films, Atomic force microscopy, Metal oxide semiconductors, Heterojunctions, Chemical vapor deposition
Abstract: We successfully achieved the growth of β-(AlxGa1−x)2O3 (x = 0–0.55) on a (100) β-Al0.24Ga0.76O3 substrate using metalorganic vapor phase epitaxy (MOVPE). A stacked layer composed of β-(Al0.47Ga0.53)2O3/β-Ga2O3 on a β-Al0.24Ga0.76O3 substrate was demonstrated. High-resolution x-ray diffraction and reciprocal space mapping analysis verified the coherent epitaxial growth of phase-pure β-(AlxGa1−x)2O3 thin films up to an Al composition of x = 0.55. Films with higher Al content exhibited partial plastic strain relaxation. The multilayer structure of the β-(Al0.47Ga0.53)2O3/β-Ga2O3 thin film exhibited good quality and coherent growth. Atomic force microscopy measurements proved a surface roughness well below 0.42 nm for the fully strained films and about 1 nm for the relaxed ones. These results indicate that the MOVPE technique has significant potential for the fabrication of β-Ga2O3-based heterojunctions suitable for device applications. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:We successfully achieved the growth of β-(AlxGa1−x)2O3 (x = 0–0.55) on a (100) β-Al0.24Ga0.76O3 substrate using metalorganic vapor phase epitaxy (MOVPE). A stacked layer composed of β-(Al0.47Ga0.53)2O3/β-Ga2O3 on a β-Al0.24Ga0.76O3 substrate was demonstrated. High-resolution x-ray diffraction and reciprocal space mapping analysis verified the coherent epitaxial growth of phase-pure β-(AlxGa1−x)2O3 thin films up to an Al composition of x = 0.55. Films with higher Al content exhibited partial plastic strain relaxation. The multilayer structure of the β-(Al0.47Ga0.53)2O3/β-Ga2O3 thin film exhibited good quality and coherent growth. Atomic force microscopy measurements proved a surface roughness well below 0.42 nm for the fully strained films and about 1 nm for the relaxed ones. These results indicate that the MOVPE technique has significant potential for the fabrication of β-Ga2O3-based heterojunctions suitable for device applications. [ABSTRACT FROM AUTHOR]
ISSN:07342101
DOI:10.1116/6.0005233