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Metalorganic vapor phase epitaxy of β-(AlxGa1−x)2O3 (x = 0–0.55) and multilayer structure on (100) β-(Al0.24Ga0.76)2O3 substrates.

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Title: Metalorganic vapor phase epitaxy of β-(AlxGa1−x)2O3 (x = 0–0.55) and multilayer structure on (100) β-(Al0.24Ga0.76)2O3 substrates.
Authors: Bin Anooz, Saud1 (AUTHOR) saud.binanooz@ikz-berlin.de, Akhtar, Arub1 (AUTHOR), Chou, Ta-Shun1 (AUTHOR), Galazka, Zbigniew1 (AUTHOR), Schmidbauer, Martin1 (AUTHOR), Remmele, Thilo1 (AUTHOR), Albrecht, Martin1 (AUTHOR), Fiedler, Andreas1 (AUTHOR), Popp, Andreas1 (AUTHOR)
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. May2026, Vol. 44 Issue 3, p1-8. 8p.
Subjects: Epitaxy, Multilayers, X-ray diffraction, Thin films, Atomic force microscopy, Metal oxide semiconductors, Heterojunctions, Chemical vapor deposition
Abstract: We successfully achieved the growth of β-(AlxGa1−x)2O3 (x = 0–0.55) on a (100) β-Al0.24Ga0.76O3 substrate using metalorganic vapor phase epitaxy (MOVPE). A stacked layer composed of β-(Al0.47Ga0.53)2O3/β-Ga2O3 on a β-Al0.24Ga0.76O3 substrate was demonstrated. High-resolution x-ray diffraction and reciprocal space mapping analysis verified the coherent epitaxial growth of phase-pure β-(AlxGa1−x)2O3 thin films up to an Al composition of x = 0.55. Films with higher Al content exhibited partial plastic strain relaxation. The multilayer structure of the β-(Al0.47Ga0.53)2O3/β-Ga2O3 thin film exhibited good quality and coherent growth. Atomic force microscopy measurements proved a surface roughness well below 0.42 nm for the fully strained films and about 1 nm for the relaxed ones. These results indicate that the MOVPE technique has significant potential for the fabrication of β-Ga2O3-based heterojunctions suitable for device applications. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 194305133
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  Data: We successfully achieved the growth of β-(AlxGa1−x)2O3 (x = 0–0.55) on a (100) β-Al0.24Ga0.76O3 substrate using metalorganic vapor phase epitaxy (MOVPE). A stacked layer composed of β-(Al0.47Ga0.53)2O3/β-Ga2O3 on a β-Al0.24Ga0.76O3 substrate was demonstrated. High-resolution x-ray diffraction and reciprocal space mapping analysis verified the coherent epitaxial growth of phase-pure β-(AlxGa1−x)2O3 thin films up to an Al composition of x = 0.55. Films with higher Al content exhibited partial plastic strain relaxation. The multilayer structure of the β-(Al0.47Ga0.53)2O3/β-Ga2O3 thin film exhibited good quality and coherent growth. Atomic force microscopy measurements proved a surface roughness well below 0.42 nm for the fully strained films and about 1 nm for the relaxed ones. These results indicate that the MOVPE technique has significant potential for the fabrication of β-Ga2O3-based heterojunctions suitable for device applications. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1116/6.0005233
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 1
    Subjects:
      – SubjectFull: Epitaxy
        Type: general
      – SubjectFull: Multilayers
        Type: general
      – SubjectFull: X-ray diffraction
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Atomic force microscopy
        Type: general
      – SubjectFull: Metal oxide semiconductors
        Type: general
      – SubjectFull: Heterojunctions
        Type: general
      – SubjectFull: Chemical vapor deposition
        Type: general
    Titles:
      – TitleFull: Metalorganic vapor phase epitaxy of β-(AlxGa1−x)2O3 (x = 0–0.55) and multilayer structure on (100) β-(Al0.24Ga0.76)2O3 substrates.
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            NameFull: Bin Anooz, Saud
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            NameFull: Akhtar, Arub
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            NameFull: Chou, Ta-Shun
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            NameFull: Galazka, Zbigniew
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            – D: 01
              M: 05
              Text: May2026
              Type: published
              Y: 2026
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            – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
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