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Modelling the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs.

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Title: Modelling the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs.
Authors: Milazzo, S.1 (AUTHOR) simone.milazzo@imm.cnr.it, Greco, G.1 (AUTHOR), Giorgino, G.2 (AUTHOR), Miccoli, C.2 (AUTHOR), Mirabella, S.3,4 (AUTHOR), Iucolano, F.2 (AUTHOR), Roccaforte, F.1 (AUTHOR)
Source: Microelectronic Engineering. Sep2026, Vol. 305, pN.PAG-N.PAG. 1p.
Subjects: Schottky barrier diodes, Poole-Frenkel effect, Transistors, Thermionic emission
Abstract: This work investigates the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs, demonstrating its strong dependence on the gate geometry. By separating the contributions of the gate area and perimeter, the Schottky-related parameters were accurately extracted. In particular, a Schottky barrier height of 1.10 eV and an acceptor concentration of 2.8 × 1018 cm−3 were determined from the area contribution using a thermionic field emission model up to 8 V forward bias, in good agreement with C V data. The perimeter current was successfully described by Poole-Frenkel emission, revealing a shallow trap state at 108 meV, likely related to plasma-induced defects at the p-GaN sidewalls. These findings provide a reliable methodology for extracting physical parameters essential for TCAD simulations and for optimizing device processing. [Display omitted] [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:This work investigates the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs, demonstrating its strong dependence on the gate geometry. By separating the contributions of the gate area and perimeter, the Schottky-related parameters were accurately extracted. In particular, a Schottky barrier height of 1.10 eV and an acceptor concentration of 2.8 × 1018 cm−3 were determined from the area contribution using a thermionic field emission model up to 8 V forward bias, in good agreement with C V data. The perimeter current was successfully described by Poole-Frenkel emission, revealing a shallow trap state at 108 meV, likely related to plasma-induced defects at the p-GaN sidewalls. These findings provide a reliable methodology for extracting physical parameters essential for TCAD simulations and for optimizing device processing. [Display omitted] [ABSTRACT FROM AUTHOR]
ISSN:01679317
DOI:10.1016/j.mee.2026.112469