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Modelling the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs.

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Title: Modelling the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs.
Authors: Milazzo, S.1 (AUTHOR) simone.milazzo@imm.cnr.it, Greco, G.1 (AUTHOR), Giorgino, G.2 (AUTHOR), Miccoli, C.2 (AUTHOR), Mirabella, S.3,4 (AUTHOR), Iucolano, F.2 (AUTHOR), Roccaforte, F.1 (AUTHOR)
Source: Microelectronic Engineering. Sep2026, Vol. 305, pN.PAG-N.PAG. 1p.
Subjects: Schottky barrier diodes, Poole-Frenkel effect, Transistors, Thermionic emission
Abstract: This work investigates the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs, demonstrating its strong dependence on the gate geometry. By separating the contributions of the gate area and perimeter, the Schottky-related parameters were accurately extracted. In particular, a Schottky barrier height of 1.10 eV and an acceptor concentration of 2.8 × 1018 cm−3 were determined from the area contribution using a thermionic field emission model up to 8 V forward bias, in good agreement with C V data. The perimeter current was successfully described by Poole-Frenkel emission, revealing a shallow trap state at 108 meV, likely related to plasma-induced defects at the p-GaN sidewalls. These findings provide a reliable methodology for extracting physical parameters essential for TCAD simulations and for optimizing device processing. [Display omitted] [ABSTRACT FROM AUTHOR]
Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 194368415
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Label: Title
  Group: Ti
  Data: Modelling the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs.
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  Data: <searchLink fieldCode="AR" term="%22Milazzo%2C+S%2E%22">Milazzo, S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> simone.milazzo@imm.cnr.it</i><br /><searchLink fieldCode="AR" term="%22Greco%2C+G%2E%22">Greco, G.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Giorgino%2C+G%2E%22">Giorgino, G.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Miccoli%2C+C%2E%22">Miccoli, C.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mirabella%2C+S%2E%22">Mirabella, S.</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Iucolano%2C+F%2E%22">Iucolano, F.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Roccaforte%2C+F%2E%22">Roccaforte, F.</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. Sep2026, Vol. 305, pN.PAG-N.PAG. 1p.
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  Data: <searchLink fieldCode="DE" term="%22Schottky+barrier+diodes%22">Schottky barrier diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Poole-Frenkel+effect%22">Poole-Frenkel effect</searchLink><br /><searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Thermionic+emission%22">Thermionic emission</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This work investigates the ON-state gate leakage current in p-GaN gated AlGaN/GaN HEMTs, demonstrating its strong dependence on the gate geometry. By separating the contributions of the gate area and perimeter, the Schottky-related parameters were accurately extracted. In particular, a Schottky barrier height of 1.10 eV and an acceptor concentration of 2.8 × 1018 cm−3 were determined from the area contribution using a thermionic field emission model up to 8 V forward bias, in good agreement with C V data. The perimeter current was successfully described by Poole-Frenkel emission, revealing a shallow trap state at 108 meV, likely related to plasma-induced defects at the p-GaN sidewalls. These findings provide a reliable methodology for extracting physical parameters essential for TCAD simulations and for optimizing device processing. [Display omitted] [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.mee.2026.112469
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      – Code: eng
        Text: English
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      – SubjectFull: Schottky barrier diodes
        Type: general
      – SubjectFull: Poole-Frenkel effect
        Type: general
      – SubjectFull: Transistors
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      – SubjectFull: Thermionic emission
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              M: 09
              Text: Sep2026
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              Y: 2026
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