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Defects and Conduction Band Electron Distribution in n-GaSb Single Crystal with Low Carbon Content.

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Title: Defects and Conduction Band Electron Distribution in n-GaSb Single Crystal with Low Carbon Content.
Authors: Yang, Wenwen1,2 (AUTHOR), Zhao, Youwen1 (AUTHOR), Li, Chenhui1 (AUTHOR), Bai, Yihan1,2 (AUTHOR), Lv, Xinyu1,2 (AUTHOR), Fan, Jiangtao1,2 (AUTHOR), Wang, Guowei3 (AUTHOR), Pan, Jiaoqing3 (AUTHOR), Shen, Guiying1,2 (AUTHOR) shenguiying@semi.ac.cn
Source: Journal of Electronic Materials. Jul2026, Vol. 55 Issue 7, p6158-6166. 9p.
Subjects: Conduction bands, Electron distribution, Carbon, Photoluminescence, Gallium antimonide, Doping agents (Chemistry)
Abstract: This study systematically investigates the influence of carbon content on the electrical and optical properties of Te-doped n-type GaSb single crystals grown by the liquid encapsulated Czochralski (LEC) method. Room-temperature Hall measurements reveal anomalous behavior in which high-purity samples exhibit lower mobility than their lower-purity counterparts. Supported by theoretical calculations based on the two-band model, we attribute this behavior to the reduced acceptor compensation in high-purity crystals. The relatively higher Fermi level in the low-compensation sample enhances the statistical occupation of the heavy-mass secondary L-valley, thereby degrading the overall mobility. Consequently, Hall data obtained at 77 K are found to more accurately reflect the intrinsic electrical properties. Optically, photoluminescence (PL) measurements indicate that carbon impurities occupy Sb sites (CSb), creating a competitive relationship that suppresses intrinsic defect complexes such as (VGaGaSb)2−. However, this suppression comes at the cost of enhanced non-radiative recombination and strong electrical compensation. These findings suggest that optimizing n-GaSb requires strictly minimizing carbon contamination while independently controlling intrinsic defects. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 194546579
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Defects and Conduction Band Electron Distribution in n-GaSb Single Crystal with Low Carbon Content.
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  Data: <searchLink fieldCode="AR" term="%22Yang%2C+Wenwen%22">Yang, Wenwen</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhao%2C+Youwen%22">Zhao, Youwen</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Chenhui%22">Li, Chenhui</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bai%2C+Yihan%22">Bai, Yihan</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lv%2C+Xinyu%22">Lv, Xinyu</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Fan%2C+Jiangtao%22">Fan, Jiangtao</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Guowei%22">Wang, Guowei</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Pan%2C+Jiaoqing%22">Pan, Jiaoqing</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Shen%2C+Guiying%22">Shen, Guiying</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> shenguiying@semi.ac.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Jul2026, Vol. 55 Issue 7, p6158-6166. 9p.
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  Data: <searchLink fieldCode="DE" term="%22Conduction+bands%22">Conduction bands</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+distribution%22">Electron distribution</searchLink><br /><searchLink fieldCode="DE" term="%22Carbon%22">Carbon</searchLink><br /><searchLink fieldCode="DE" term="%22Photoluminescence%22">Photoluminescence</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+antimonide%22">Gallium antimonide</searchLink><br /><searchLink fieldCode="DE" term="%22Doping+agents+%28Chemistry%29%22">Doping agents (Chemistry)</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: This study systematically investigates the influence of carbon content on the electrical and optical properties of Te-doped n-type GaSb single crystals grown by the liquid encapsulated Czochralski (LEC) method. Room-temperature Hall measurements reveal anomalous behavior in which high-purity samples exhibit lower mobility than their lower-purity counterparts. Supported by theoretical calculations based on the two-band model, we attribute this behavior to the reduced acceptor compensation in high-purity crystals. The relatively higher Fermi level in the low-compensation sample enhances the statistical occupation of the heavy-mass secondary L-valley, thereby degrading the overall mobility. Consequently, Hall data obtained at 77 K are found to more accurately reflect the intrinsic electrical properties. Optically, photoluminescence (PL) measurements indicate that carbon impurities occupy Sb sites (CSb), creating a competitive relationship that suppresses intrinsic defect complexes such as (VGaGaSb)2−. However, this suppression comes at the cost of enhanced non-radiative recombination and strong electrical compensation. These findings suggest that optimizing n-GaSb requires strictly minimizing carbon contamination while independently controlling intrinsic defects. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1007/s11664-026-12885-z
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 6158
    Subjects:
      – SubjectFull: Conduction bands
        Type: general
      – SubjectFull: Electron distribution
        Type: general
      – SubjectFull: Carbon
        Type: general
      – SubjectFull: Photoluminescence
        Type: general
      – SubjectFull: Gallium antimonide
        Type: general
      – SubjectFull: Doping agents (Chemistry)
        Type: general
    Titles:
      – TitleFull: Defects and Conduction Band Electron Distribution in n-GaSb Single Crystal with Low Carbon Content.
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            NameFull: Yang, Wenwen
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            NameFull: Zhao, Youwen
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            – D: 01
              M: 07
              Text: Jul2026
              Type: published
              Y: 2026
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