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Structural, Optical, and Electrical Characteristics of ZnSe0.8Ag0.2 Thin Films: Role of Thickness.

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Title: Structural, Optical, and Electrical Characteristics of ZnSe0.8Ag0.2 Thin Films: Role of Thickness.
Authors: Aldosari, F. M.1 (AUTHOR) fah.aldosari@psau.edu.sa, El-Azeem, S. A. Abd1 (AUTHOR), Ismail, Atef2 (AUTHOR), Shaaban, E. R.2 (AUTHOR) esam_ramadan2008@yahoo.com
Source: Journal of Electronic Materials. Jul2026, Vol. 55 Issue 7, p6285-6300. 16p.
Subjects: Thin films, Optical properties, Crystal structure, X-ray diffraction, Electric properties, Band gaps, Electron transport
Abstract: ZnSe0.8Ag0.2 thin films with thickness varying from 100 nm to 600 nm were synthesized to evaluate the impact of thickness modulation on their structural, optical, and electrical characteristics. X-ray diffraction measurements revealed that all films crystallize in a single hexagonal ZnSe phase, confirming phase purity and the successful substitutional incorporation of Ag without the formation of secondary compounds. Progressive peak narrowing with increasing thickness indicated enhanced crystallization, supported by the increase in crystallite size from approximately 15 nm to 90 nm and a simultaneous reduction in lattice microstrain, reflecting gradual relaxation of internal distortions and improved structural ordering in thicker films. Optical investigations showed a systematic redshift in the absorption edge as the thickness increased. Tauc analysis demonstrated a corresponding decrease in the optical bandgap from 2.64 eV to 2.55 eV, a behavior linked to grain coalescence, reduced defect density, and diminished disorder-induced localized states. Refractive index dispersion, extracted via the Swanepoel envelope method, exhibited a monotonic increase with thickness, indicating enhanced film packing density and electronic polarizability. Consistently, the Cauchy dispersion coefficients (A and B) increased with thickness, further reflecting improved optical homogeneity and stronger light–matter interaction in thicker films. Electrical measurements revealed a notable decrease in resistivity alongside a simultaneous increase in carrier concentration and Hall mobility, attributed to reduced grain boundary scattering, lower defect trapping, and the formation of more efficient percolation pathways for charge transport. Collectively, these findings highlight the decisive role of thickness engineering in tailoring the microstructure, band structure, optical constants, and charge transport behavior of ZnSe0.8Ag0.2 thin films, confirming their potential suitability for integration in advanced optoelectronic and photonic platforms. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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  Data: Structural, Optical, and Electrical Characteristics of ZnSe<subscript>0.8</subscript>Ag<subscript>0.2</subscript> Thin Films: Role of Thickness.
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  Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+properties%22">Optical properties</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+structure%22">Crystal structure</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+diffraction%22">X-ray diffraction</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+properties%22">Electric properties</searchLink><br /><searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+transport%22">Electron transport</searchLink>
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  Data: ZnSe0.8Ag0.2 thin films with thickness varying from 100 nm to 600 nm were synthesized to evaluate the impact of thickness modulation on their structural, optical, and electrical characteristics. X-ray diffraction measurements revealed that all films crystallize in a single hexagonal ZnSe phase, confirming phase purity and the successful substitutional incorporation of Ag without the formation of secondary compounds. Progressive peak narrowing with increasing thickness indicated enhanced crystallization, supported by the increase in crystallite size from approximately 15 nm to 90 nm and a simultaneous reduction in lattice microstrain, reflecting gradual relaxation of internal distortions and improved structural ordering in thicker films. Optical investigations showed a systematic redshift in the absorption edge as the thickness increased. Tauc analysis demonstrated a corresponding decrease in the optical bandgap from 2.64 eV to 2.55 eV, a behavior linked to grain coalescence, reduced defect density, and diminished disorder-induced localized states. Refractive index dispersion, extracted via the Swanepoel envelope method, exhibited a monotonic increase with thickness, indicating enhanced film packing density and electronic polarizability. Consistently, the Cauchy dispersion coefficients (A and B) increased with thickness, further reflecting improved optical homogeneity and stronger light–matter interaction in thicker films. Electrical measurements revealed a notable decrease in resistivity alongside a simultaneous increase in carrier concentration and Hall mobility, attributed to reduced grain boundary scattering, lower defect trapping, and the formation of more efficient percolation pathways for charge transport. Collectively, these findings highlight the decisive role of thickness engineering in tailoring the microstructure, band structure, optical constants, and charge transport behavior of ZnSe0.8Ag0.2 thin films, confirming their potential suitability for integration in advanced optoelectronic and photonic platforms. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1007/s11664-026-12906-x
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        Text: English
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        Type: general
      – SubjectFull: Optical properties
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      – SubjectFull: Crystal structure
        Type: general
      – SubjectFull: X-ray diffraction
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      – SubjectFull: Electric properties
        Type: general
      – SubjectFull: Band gaps
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      – SubjectFull: Electron transport
        Type: general
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      – TitleFull: Structural, Optical, and Electrical Characteristics of ZnSe0.8Ag0.2 Thin Films: Role of Thickness.
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              Text: Jul2026
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              Y: 2026
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