Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances.
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| Title: | Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. |
|---|---|
| Authors: | Pu, Taofei1 (AUTHOR), Li, Xiaobo2 (AUTHOR), Li, Liuan3 (AUTHOR) liliuan@jlu.edu.cn, Ao, Jin-Ping1,2 (AUTHOR) |
| Source: | Materials (1996-1944). Jun2026, Vol. 19 Issue 11, p2205. 21p. |
| Subjects: | Power electronics, Threshold voltage, Breakdown voltage, Transistors, Modulation-doped field-effect transistors |
| Abstract: | As a representative wide-bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). For power electronics applications, and to take full advantage of the superiorities of the GaN material, the normally off operation is required based on an AlGaN/GaN heterostructure. For a commercial approach, GaN HEMTs with a p-GaN gate have become a research hotspot. The characteristics of p-GaN gate HEMTs have a significant relationship with gate structure, especially the contact type on the p-GaN layer. In this review, the necessity of normally off operation and the advantages of adopting a p-GaN gate are elaborated, followed by the theory of achieving normally off operation by p-GaN and critical fabrication processes. The various gate structures are discussed, including metal gate, junction gate and hybrid gate structures on the p-GaN layer, to improve threshold voltage. Meanwhile, the methods required to optimize breakdown voltage and monolithically integrated technologies are also demonstrated. This review outlines the development and future trends of p-GaN gate HEMTs for power systems. [ABSTRACT FROM AUTHOR] |
| Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 194587116 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Pu%2C+Taofei%22">Pu, Taofei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Xiaobo%22">Li, Xiaobo</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Liuan%22">Li, Liuan</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> liliuan@jlu.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Ao%2C+Jin-Ping%22">Ao, Jin-Ping</searchLink><relatesTo>1,2</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. Jun2026, Vol. 19 Issue 11, p2205. 21p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Power+electronics%22">Power electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Threshold+voltage%22">Threshold voltage</searchLink><br /><searchLink fieldCode="DE" term="%22Breakdown+voltage%22">Breakdown voltage</searchLink><br /><searchLink fieldCode="DE" term="%22Transistors%22">Transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Modulation-doped+field-effect+transistors%22">Modulation-doped field-effect transistors</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: As a representative wide-bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). For power electronics applications, and to take full advantage of the superiorities of the GaN material, the normally off operation is required based on an AlGaN/GaN heterostructure. For a commercial approach, GaN HEMTs with a p-GaN gate have become a research hotspot. The characteristics of p-GaN gate HEMTs have a significant relationship with gate structure, especially the contact type on the p-GaN layer. In this review, the necessity of normally off operation and the advantages of adopting a p-GaN gate are elaborated, followed by the theory of achieving normally off operation by p-GaN and critical fabrication processes. The various gate structures are discussed, including metal gate, junction gate and hybrid gate structures on the p-GaN layer, to improve threshold voltage. Meanwhile, the methods required to optimize breakdown voltage and monolithically integrated technologies are also demonstrated. This review outlines the development and future trends of p-GaN gate HEMTs for power systems. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Materials (1996-1944) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=194587116 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/ma19112205 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 21 StartPage: 2205 Subjects: – SubjectFull: Power electronics Type: general – SubjectFull: Threshold voltage Type: general – SubjectFull: Breakdown voltage Type: general – SubjectFull: Transistors Type: general – SubjectFull: Modulation-doped field-effect transistors Type: general Titles: – TitleFull: Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Pu, Taofei – PersonEntity: Name: NameFull: Li, Xiaobo – PersonEntity: Name: NameFull: Li, Liuan – PersonEntity: Name: NameFull: Ao, Jin-Ping IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: Jun2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 19961944 Numbering: – Type: volume Value: 19 – Type: issue Value: 11 Titles: – TitleFull: Materials (1996-1944) Type: main |
| ResultId | 1 |
