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Structural Properties and Energy Band Alignment of Crystalline AlN Grown by Atomic Layer Deposition on Epitaxial Graphene.

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Title: Structural Properties and Energy Band Alignment of Crystalline AlN Grown by Atomic Layer Deposition on Epitaxial Graphene.
Authors: Schilirò, Emanuela1 (AUTHOR) emanuela.schiliro@imm.cnr.it, Panasci, Salvatore Ethan1,2 (AUTHOR), Lo Nigro, Raffaella1,3 (AUTHOR), Roccaforte, Fabrizio1,4 (AUTHOR), Blagoev, Blagoy2,5 (AUTHOR), Mehandzhiev, Vladimir1,2 (AUTHOR), Georgieva, Borislava2,3 (AUTHOR), Avramova, Ivalina3,4 (AUTHOR), Yakimova, Rositsa4,5 (AUTHOR), Beshkova, Milena3,5 (AUTHOR), Giannazzo, Filippo1 (AUTHOR)
Source: Nanomaterials (2079-4991). Jun2026, Vol. 16 Issue 11, p659. 12p.
Subjects: Aluminum nitride, Graphene, Electronic band structure, Crystal structure, Kelvin probe force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, Atomic layer deposition
Abstract: In this work, the atomic layer deposition (ALD) of an ultra-thin AlN film on the surface of monolayer EG grown on-axis 4H-SiC(0001) substrates has been investigated as a function of the number of ALD cycles. The formation of a homogeneous film with a 10 nm thickness and crystalline wurtzite structure was obtained after 320 cycles, as demonstrated by atomic force microscopy (AFM) mapping, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction. Raman mapping revealed a significant reduction in the native compressive strain of as-grown EG (ε ≈ −0.36%) with increasing ALD cycles, down to a value of −0.16% after full coverage. Finally, Kelvin Probe Force Microscopy (KPFM) surface potential mapping allowed the evaluation of energy band alignment of the AlN/EG heterojunction, with a conduction band offset of ~2.6 eV between the crystalline AlN film and the underlying EG. Such a large offset confirms AlN as a promising gate dielectric for EG-based devices. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Structural Properties and Energy Band Alignment of Crystalline AlN Grown by Atomic Layer Deposition on Epitaxial Graphene.
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  Data: <searchLink fieldCode="AR" term="%22Schilirò%2C+Emanuela%22">Schilirò, Emanuela</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> emanuela.schiliro@imm.cnr.it</i><br /><searchLink fieldCode="AR" term="%22Panasci%2C+Salvatore+Ethan%22">Panasci, Salvatore Ethan</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lo+Nigro%2C+Raffaella%22">Lo Nigro, Raffaella</searchLink><relatesTo>1,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Roccaforte%2C+Fabrizio%22">Roccaforte, Fabrizio</searchLink><relatesTo>1,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Blagoev%2C+Blagoy%22">Blagoev, Blagoy</searchLink><relatesTo>2,5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Mehandzhiev%2C+Vladimir%22">Mehandzhiev, Vladimir</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Georgieva%2C+Borislava%22">Georgieva, Borislava</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Avramova%2C+Ivalina%22">Avramova, Ivalina</searchLink><relatesTo>3,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Yakimova%2C+Rositsa%22">Yakimova, Rositsa</searchLink><relatesTo>4,5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Beshkova%2C+Milena%22">Beshkova, Milena</searchLink><relatesTo>3,5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Giannazzo%2C+Filippo%22">Giannazzo, Filippo</searchLink><relatesTo>1</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Jun2026, Vol. 16 Issue 11, p659. 12p.
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  Data: <searchLink fieldCode="DE" term="%22Aluminum+nitride%22">Aluminum nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Graphene%22">Graphene</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+band+structure%22">Electronic band structure</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+structure%22">Crystal structure</searchLink><br /><searchLink fieldCode="DE" term="%22Kelvin+probe+force+microscopy%22">Kelvin probe force microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22X-ray+photoelectron+spectroscopy%22">X-ray photoelectron spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Raman+spectroscopy%22">Raman spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+layer+deposition%22">Atomic layer deposition</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this work, the atomic layer deposition (ALD) of an ultra-thin AlN film on the surface of monolayer EG grown on-axis 4H-SiC(0001) substrates has been investigated as a function of the number of ALD cycles. The formation of a homogeneous film with a 10 nm thickness and crystalline wurtzite structure was obtained after 320 cycles, as demonstrated by atomic force microscopy (AFM) mapping, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction. Raman mapping revealed a significant reduction in the native compressive strain of as-grown EG (ε ≈ −0.36%) with increasing ALD cycles, down to a value of −0.16% after full coverage. Finally, Kelvin Probe Force Microscopy (KPFM) surface potential mapping allowed the evaluation of energy band alignment of the AlN/EG heterojunction, with a conduction band offset of ~2.6 eV between the crystalline AlN film and the underlying EG. Such a large offset confirms AlN as a promising gate dielectric for EG-based devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano16110659
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 12
        StartPage: 659
    Subjects:
      – SubjectFull: Aluminum nitride
        Type: general
      – SubjectFull: Graphene
        Type: general
      – SubjectFull: Electronic band structure
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      – SubjectFull: Crystal structure
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      – SubjectFull: Kelvin probe force microscopy
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      – SubjectFull: X-ray photoelectron spectroscopy
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      – SubjectFull: Raman spectroscopy
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      – SubjectFull: Atomic layer deposition
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      – TitleFull: Structural Properties and Energy Band Alignment of Crystalline AlN Grown by Atomic Layer Deposition on Epitaxial Graphene.
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              M: 06
              Text: Jun2026
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