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Effect of aluminium on the phase change properties of Ge₂Sb₂Te₅ for memory applications.

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Title: Effect of aluminium on the phase change properties of Ge₂Sb₂Te₅ for memory applications.
Authors: Kemparaju, R.1 (AUTHOR) r21pph09@reva.edu.in, Rohit2 (AUTHOR), Prabhudessai, Akila2 (AUTHOR), Kumar, M. Madesh1 (AUTHOR), Ramesh, K.2 (AUTHOR) kramesh@iisc.ac.in
Source: Applied Physics A: Materials Science & Processing. Jun2026, Vol. 132 Issue 6, p1-15. 15p.
Subjects: Aluminum alloying, Phase change memory, Thermal stability, Phase change materials, Electrical resistivity, Phase transitions
Abstract: Ge₂Sb₂Te₅ (GST) is a prominent non-volatile phase change material extensively investigated for phase change random access memory (PCRAM) applications. GST exhibits a phase transition from the amorphous phase to a metastable NaCl-type crystalline structure at approximately 145 °C, and followed by a transition to a stable hexagonal phase at around 220 °C. In this study, we explore the effect of substituting Sb with Al to form Ge2 Sb2-xTe5Alx alloys, with x = 0, 0.1, 0.25, 0.5, and 1.0. The incorporation of Al enhances network connectivity and rigidity, significantly influencing the structural, electrical, and optical properties of the GSTt matrix. In particular, the addition of Al stabilizes the metastable FCC phase and suppresses the FCC to hexagonal transition. The electrical resistivity contrast increased by an order of magnitude compared to pristine GST. Also, the crystalline phase resistivity is higher for the Al added samples compared to the undoped GST. The high contrast in electrical resistivity, increased transition temperature, high thermal stability and data retention make it a promising candidate for next-generation PCRAM devices. [ABSTRACT FROM AUTHOR]
Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Effect of aluminium on the phase change properties of Ge₂Sb₂Te₅ for memory applications.
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  Data: <searchLink fieldCode="AR" term="%22Kemparaju%2C+R%2E%22">Kemparaju, R.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> r21pph09@reva.edu.in</i><br /><searchLink fieldCode="AR" term="%22Rohit%22">Rohit</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Prabhudessai%2C+Akila%22">Prabhudessai, Akila</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kumar%2C+M%2E+Madesh%22">Kumar, M. Madesh</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ramesh%2C+K%2E%22">Ramesh, K.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> kramesh@iisc.ac.in</i>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+A%3A+Materials+Science+%26+Processing%22">Applied Physics A: Materials Science & Processing</searchLink>. Jun2026, Vol. 132 Issue 6, p1-15. 15p.
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  Data: <searchLink fieldCode="DE" term="%22Aluminum+alloying%22">Aluminum alloying</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+change+memory%22">Phase change memory</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+stability%22">Thermal stability</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+change+materials%22">Phase change materials</searchLink><br /><searchLink fieldCode="DE" term="%22Electrical+resistivity%22">Electrical resistivity</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+transitions%22">Phase transitions</searchLink>
– Name: Abstract
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  Data: Ge₂Sb₂Te₅ (GST) is a prominent non-volatile phase change material extensively investigated for phase change random access memory (PCRAM) applications. GST exhibits a phase transition from the amorphous phase to a metastable NaCl-type crystalline structure at approximately 145 °C, and followed by a transition to a stable hexagonal phase at around 220 °C. In this study, we explore the effect of substituting Sb with Al to form Ge2 Sb2-xTe5Alx alloys, with x = 0, 0.1, 0.25, 0.5, and 1.0. The incorporation of Al enhances network connectivity and rigidity, significantly influencing the structural, electrical, and optical properties of the GSTt matrix. In particular, the addition of Al stabilizes the metastable FCC phase and suppresses the FCC to hexagonal transition. The electrical resistivity contrast increased by an order of magnitude compared to pristine GST. Also, the crystalline phase resistivity is higher for the Al added samples compared to the undoped GST. The high contrast in electrical resistivity, increased transition temperature, high thermal stability and data retention make it a promising candidate for next-generation PCRAM devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Applied Physics A: Materials Science & Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Text: English
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      – SubjectFull: Thermal stability
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              Text: Jun2026
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