A four MOSFETs based grounded memristor emulator.
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| Title: | A four MOSFETs based grounded memristor emulator. |
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| Authors: | Kumar, Navnit1 (AUTHOR) navnitnitmanipur@gmail.com, Pandey, Neeta2 (AUTHOR) n66pandey@rediffmail.com, Kumar, Manjeet2 (AUTHOR) manjeetchhillar@gmail.com, Kumar, Manish3 (AUTHOR) manishk19071984@gmail.com |
| Source: | Analog Integrated Circuits & Signal Processing. Jun2026, Vol. 127 Issue 3, p1-11. 11p. |
| Abstract: | A novel off- the-shelf Grounded Memristor Emulator (GME) based on four MOS transistors is reported in this brief. It consists of one PMOS and three NMOS transistors. The proposed emulator utilizes MOS capacitors instead of passive capacitors. Consequently, it can be stated that the circuit is exceedingly easy and appropriate for VLSI implementation. The fingerprint of memristor is represented by a pinched hysteresis loop thoroughly analyzed by SPICE simulator utilizing 180-nm CMOS technology with a bias voltage of ± 0.45 V. The designed circuit demonstrates non-linear behavior effectively up to 400. The suggested circuit consumes 9.03 of power. Moreover, area of the layout of the proposed circuit is 627.41 Further, the analysis of non-ideal conditions and post-layout simulations have been incorporated to illustrate the impact of parasitic components on the designed memristor emulator. In addition, the feasible practical applications are examined via the implementation of relaxation oscillator, which is suitable for biomedical and neuromorphic applications. [ABSTRACT FROM AUTHOR] |
| Copyright of Analog Integrated Circuits & Signal Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 194744588 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: A four MOSFETs based grounded memristor emulator. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Kumar%2C+Navnit%22">Kumar, Navnit</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> navnitnitmanipur@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Pandey%2C+Neeta%22">Pandey, Neeta</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> n66pandey@rediffmail.com</i><br /><searchLink fieldCode="AR" term="%22Kumar%2C+Manjeet%22">Kumar, Manjeet</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> manjeetchhillar@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Kumar%2C+Manish%22">Kumar, Manish</searchLink><relatesTo>3</relatesTo> (AUTHOR)<i> manishk19071984@gmail.com</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Analog+Integrated+Circuits+%26+Signal+Processing%22">Analog Integrated Circuits & Signal Processing</searchLink>. Jun2026, Vol. 127 Issue 3, p1-11. 11p. – Name: Abstract Label: Abstract Group: Ab Data: A novel off- the-shelf Grounded Memristor Emulator (GME) based on four MOS transistors is reported in this brief. It consists of one PMOS and three NMOS transistors. The proposed emulator utilizes MOS capacitors instead of passive capacitors. Consequently, it can be stated that the circuit is exceedingly easy and appropriate for VLSI implementation. The fingerprint of memristor is represented by a pinched hysteresis loop thoroughly analyzed by SPICE simulator utilizing 180-nm CMOS technology with a bias voltage of ± 0.45 V. The designed circuit demonstrates non-linear behavior effectively up to 400. The suggested circuit consumes 9.03 of power. Moreover, area of the layout of the proposed circuit is 627.41 Further, the analysis of non-ideal conditions and post-layout simulations have been incorporated to illustrate the impact of parasitic components on the designed memristor emulator. In addition, the feasible practical applications are examined via the implementation of relaxation oscillator, which is suitable for biomedical and neuromorphic applications. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Analog Integrated Circuits & Signal Processing is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10470-026-02602-5 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 11 StartPage: 1 Titles: – TitleFull: A four MOSFETs based grounded memristor emulator. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Kumar, Navnit – PersonEntity: Name: NameFull: Pandey, Neeta – PersonEntity: Name: NameFull: Kumar, Manjeet – PersonEntity: Name: NameFull: Kumar, Manish IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: Jun2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 09251030 Numbering: – Type: volume Value: 127 – Type: issue Value: 3 Titles: – TitleFull: Analog Integrated Circuits & Signal Processing Type: main |
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