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Recent Advances in the Synthesis and Application of Tellurium Semiconductors.

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Title: Recent Advances in the Synthesis and Application of Tellurium Semiconductors.
Authors: Yang, Hao1,2 (AUTHOR), Lyu, Zhiyi2,3 (AUTHOR), Lee, Hoo-Jeong1,3,4 (AUTHOR) hlee@skku.edu
Source: Nanomaterials (2079-4991). Jun2026, Vol. 16 Issue 12, p725. 24p.
Subjects: Nanostructures, Semiconductors, Chemical synthesis, Memristors, Field-effect transistors, Optoelectronics, Neuromorphics, Photodetectors
Abstract: Tellurium (Te), an attractive p-type van der Waals semiconductor, has been considered a promising candidate in electrical applications due to its unique one-dimensional chiral atomic-helical-chain structure, tunable bandgap, and ultrahigh hole mobility. This review summarizes recent advances in the controlled synthesis of Te semiconductor nanostructures, including one-dimensional tellurium nanowires and two-dimensional tellurene in the form of nanosheets and thin films. We further highlight emerging electrical applications of Te in field-effect transistors, logic circuits, photodetectors, memristors, and artificial synapse devices. Finally, current challenges and future opportunities for the commercialization of Te-based electronic and optoelectronic devices, particularly for neuromorphic and in-sensor computing systems, are discussed. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: <searchLink fieldCode="DE" term="%22Nanostructures%22">Nanostructures</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+synthesis%22">Chemical synthesis</searchLink><br /><searchLink fieldCode="DE" term="%22Memristors%22">Memristors</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Optoelectronics%22">Optoelectronics</searchLink><br /><searchLink fieldCode="DE" term="%22Neuromorphics%22">Neuromorphics</searchLink><br /><searchLink fieldCode="DE" term="%22Photodetectors%22">Photodetectors</searchLink>
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  Data: Tellurium (Te), an attractive p-type van der Waals semiconductor, has been considered a promising candidate in electrical applications due to its unique one-dimensional chiral atomic-helical-chain structure, tunable bandgap, and ultrahigh hole mobility. This review summarizes recent advances in the controlled synthesis of Te semiconductor nanostructures, including one-dimensional tellurium nanowires and two-dimensional tellurene in the form of nanosheets and thin films. We further highlight emerging electrical applications of Te in field-effect transistors, logic circuits, photodetectors, memristors, and artificial synapse devices. Finally, current challenges and future opportunities for the commercialization of Te-based electronic and optoelectronic devices, particularly for neuromorphic and in-sensor computing systems, are discussed. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano16120725
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      – Code: eng
        Text: English
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        PageCount: 24
        StartPage: 725
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      – SubjectFull: Nanostructures
        Type: general
      – SubjectFull: Semiconductors
        Type: general
      – SubjectFull: Chemical synthesis
        Type: general
      – SubjectFull: Memristors
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      – SubjectFull: Field-effect transistors
        Type: general
      – SubjectFull: Optoelectronics
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      – SubjectFull: Neuromorphics
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      – SubjectFull: Photodetectors
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      – TitleFull: Recent Advances in the Synthesis and Application of Tellurium Semiconductors.
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            NameFull: Yang, Hao
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            NameFull: Lyu, Zhiyi
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            NameFull: Lee, Hoo-Jeong
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            – D: 15
              M: 06
              Text: Jun2026
              Type: published
              Y: 2026
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