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An Ether-Containing Hafnium–Diethylene Glycol Dry Resist Prepared by Molecular Layer Deposition for Mild-Acid Development.

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Title: An Ether-Containing Hafnium–Diethylene Glycol Dry Resist Prepared by Molecular Layer Deposition for Mild-Acid Development.
Authors: Shi, Chao1,2 (AUTHOR), Wang, Yixian1,2 (AUTHOR), Wang, Zimai1,2,3 (AUTHOR), Tian, Yumo1,2,4 (AUTHOR), Chen, Kuanlin1,2,5 (AUTHOR), Li, Linyang1,2,6 (AUTHOR), Chen, Xianhaoyan1,2 (AUTHOR), Cai, Yuan2,3 (AUTHOR), Wang, Tuo1,2,3,4,5,6 (AUTHOR) wangtuo@tju.edu.cn
Source: Nanomaterials (2079-4991). Jun2026, Vol. 16 Issue 12, p726. 16p.
Subjects: Diethylene glycol, Photoresists, Dissolution (Chemistry), Atomic layer deposition, Electron beam lithography, Photolithography
Abstract: Advanced lithography, including electron beam lithography (EBL), X-ray lithography (XRL), and extreme ultraviolet lithography (EUVL), imposes stringent requirements on photoresists in resolution, sensitivity, and process compatibility, thereby driving the development of metal-containing hybrid resists and vapor-phase deposition strategies. However, existing Hf-based dry hybrid photoresists often struggle to provide sufficient dissolution contrast for clean pattern formation under mild development, as unexposed regions are not fully removed. In this work, an ether-containing hafnium-based photoresist was fabricated by molecular layer deposition (MLD). Incorporation of the diethylene glycol (DEG)-derived ether unit modifies the local coordination environment of the hybrid film and enhances the removability of the unexposed regions, enabling removal in 0.1 M HCl. FTIR and XPS analyses reveal that exposure disrupts Hf-O-C coordination motifs and converts the initial hybrid network into a more HfOx-rich, less soluble framework. This combination of enhanced solubility in the unexposed regions and exposure-induced stabilization in the exposed regions establishes sufficient dissolution contrast for mild-acid negative-tone development. E-beam tests show a critical dose of approximately 250 μC·cm−2 and reproducible patterning down to 50 nm. These results identify DEG-mediated ether incorporation as an effective route to improving developer compatibility in Hf-based MLD dry resists. [ABSTRACT FROM AUTHOR]
Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: An Ether-Containing Hafnium–Diethylene Glycol Dry Resist Prepared by Molecular Layer Deposition for Mild-Acid Development.
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  Data: <searchLink fieldCode="AR" term="%22Shi%2C+Chao%22">Shi, Chao</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Yixian%22">Wang, Yixian</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Zimai%22">Wang, Zimai</searchLink><relatesTo>1,2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tian%2C+Yumo%22">Tian, Yumo</searchLink><relatesTo>1,2,4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Kuanlin%22">Chen, Kuanlin</searchLink><relatesTo>1,2,5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Li%2C+Linyang%22">Li, Linyang</searchLink><relatesTo>1,2,6</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Chen%2C+Xianhaoyan%22">Chen, Xianhaoyan</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Cai%2C+Yuan%22">Cai, Yuan</searchLink><relatesTo>2,3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Tuo%22">Wang, Tuo</searchLink><relatesTo>1,2,3,4,5,6</relatesTo> (AUTHOR)<i> wangtuo@tju.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Jun2026, Vol. 16 Issue 12, p726. 16p.
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  Data: <searchLink fieldCode="DE" term="%22Diethylene+glycol%22">Diethylene glycol</searchLink><br /><searchLink fieldCode="DE" term="%22Photoresists%22">Photoresists</searchLink><br /><searchLink fieldCode="DE" term="%22Dissolution+%28Chemistry%29%22">Dissolution (Chemistry)</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+layer+deposition%22">Atomic layer deposition</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+beam+lithography%22">Electron beam lithography</searchLink><br /><searchLink fieldCode="DE" term="%22Photolithography%22">Photolithography</searchLink>
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  Data: Advanced lithography, including electron beam lithography (EBL), X-ray lithography (XRL), and extreme ultraviolet lithography (EUVL), imposes stringent requirements on photoresists in resolution, sensitivity, and process compatibility, thereby driving the development of metal-containing hybrid resists and vapor-phase deposition strategies. However, existing Hf-based dry hybrid photoresists often struggle to provide sufficient dissolution contrast for clean pattern formation under mild development, as unexposed regions are not fully removed. In this work, an ether-containing hafnium-based photoresist was fabricated by molecular layer deposition (MLD). Incorporation of the diethylene glycol (DEG)-derived ether unit modifies the local coordination environment of the hybrid film and enhances the removability of the unexposed regions, enabling removal in 0.1 M HCl. FTIR and XPS analyses reveal that exposure disrupts Hf-O-C coordination motifs and converts the initial hybrid network into a more HfOx-rich, less soluble framework. This combination of enhanced solubility in the unexposed regions and exposure-induced stabilization in the exposed regions establishes sufficient dissolution contrast for mild-acid negative-tone development. E-beam tests show a critical dose of approximately 250 μC·cm−2 and reproducible patterning down to 50 nm. These results identify DEG-mediated ether incorporation as an effective route to improving developer compatibility in Hf-based MLD dry resists. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.3390/nano16120726
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        Text: English
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      – SubjectFull: Diethylene glycol
        Type: general
      – SubjectFull: Photoresists
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      – SubjectFull: Dissolution (Chemistry)
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      – SubjectFull: Atomic layer deposition
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      – SubjectFull: Electron beam lithography
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      – SubjectFull: Photolithography
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      – TitleFull: An Ether-Containing Hafnium–Diethylene Glycol Dry Resist Prepared by Molecular Layer Deposition for Mild-Acid Development.
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              Text: Jun2026
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