A 1–12 GHz Ultra‐Wide Band Bidirectional Amplifier Featuring Enhanced Loop Stability.
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| Title: | A 1–12 GHz Ultra‐Wide Band Bidirectional Amplifier Featuring Enhanced Loop Stability. |
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| Authors: | Diao, Rui1 (AUTHOR), Ai, Yu1 (AUTHOR), Zhang, Tiedi1 (AUTHOR) zhangtiedi@uestc.edu.cn, Fan, Chao2 (AUTHOR) |
| Source: | Microwave & Optical Technology Letters. Jun2026, Vol. 68 Issue 6, p1-10. 10p. |
| Subjects: | Electronic amplifiers, Closed loop system stability, Reliability in engineering, Radio frequency, Gallium arsenide transistors, Ultra-wideband devices |
| Abstract: | Bidirectional amplifiers (BDAs) are key components in RF communication systems, enabling efficient two‐way signal transmission over shared paths. Enhancing their performance is essential for improving signal integrity, reduce power loss, and increase overall system efficiency, particularly in compact and high‐frequency wireless applications. In this study, we report the design and fabrication of an ultra‐wideband BDA operating at 1–12 GHz using the GaAs 0.25 μm PHEMT process. we introduce a new common‐leg topology, which significantly improves the switching speed between transmit and receive (T/R) modes. We incorporate RLC negative feedback and peaking inductor techniques to ensure consistent gain flatness across the operating band of the developed amplifier and provide positive gain slope compensation. Moreover, we analyze the high‐frequency stability in the bidirectional signal paths by proposing a design methodology based on the loop stability model to guarantee unconditional stability. Our findings demonstrate a small‐signal gain exceeding 13 dB in both T/R modes over the full 1–12 GHz band of the amplifier, with input and output return losses better than 10 dB. The noise figure remains below 4 dB, and the output 1 dB compression point (OP‐1dB) is better than 14 dBm. Additionally, the amplifier exhibits stable performance across varying temperature conditions, indicating robust thermal reliability. [ABSTRACT FROM AUTHOR] |
| Copyright of Microwave & Optical Technology Letters is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 194919738 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: A 1–12 GHz Ultra‐Wide Band Bidirectional Amplifier Featuring Enhanced Loop Stability. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Diao%2C+Rui%22">Diao, Rui</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ai%2C+Yu%22">Ai, Yu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhang%2C+Tiedi%22">Zhang, Tiedi</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> zhangtiedi@uestc.edu.cn</i><br /><searchLink fieldCode="AR" term="%22Fan%2C+Chao%22">Fan, Chao</searchLink><relatesTo>2</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Microwave+%26+Optical+Technology+Letters%22">Microwave & Optical Technology Letters</searchLink>. Jun2026, Vol. 68 Issue 6, p1-10. 10p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Electronic+amplifiers%22">Electronic amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22Closed+loop+system+stability%22">Closed loop system stability</searchLink><br /><searchLink fieldCode="DE" term="%22Reliability+in+engineering%22">Reliability in engineering</searchLink><br /><searchLink fieldCode="DE" term="%22Radio+frequency%22">Radio frequency</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium+arsenide+transistors%22">Gallium arsenide transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Ultra-wideband+devices%22">Ultra-wideband devices</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Bidirectional amplifiers (BDAs) are key components in RF communication systems, enabling efficient two‐way signal transmission over shared paths. Enhancing their performance is essential for improving signal integrity, reduce power loss, and increase overall system efficiency, particularly in compact and high‐frequency wireless applications. In this study, we report the design and fabrication of an ultra‐wideband BDA operating at 1–12 GHz using the GaAs 0.25 μm PHEMT process. we introduce a new common‐leg topology, which significantly improves the switching speed between transmit and receive (T/R) modes. We incorporate RLC negative feedback and peaking inductor techniques to ensure consistent gain flatness across the operating band of the developed amplifier and provide positive gain slope compensation. Moreover, we analyze the high‐frequency stability in the bidirectional signal paths by proposing a design methodology based on the loop stability model to guarantee unconditional stability. Our findings demonstrate a small‐signal gain exceeding 13 dB in both T/R modes over the full 1–12 GHz band of the amplifier, with input and output return losses better than 10 dB. The noise figure remains below 4 dB, and the output 1 dB compression point (OP‐1dB) is better than 14 dBm. Additionally, the amplifier exhibits stable performance across varying temperature conditions, indicating robust thermal reliability. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Microwave & Optical Technology Letters is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1002/mop.70663 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 10 StartPage: 1 Subjects: – SubjectFull: Electronic amplifiers Type: general – SubjectFull: Closed loop system stability Type: general – SubjectFull: Reliability in engineering Type: general – SubjectFull: Radio frequency Type: general – SubjectFull: Gallium arsenide transistors Type: general – SubjectFull: Ultra-wideband devices Type: general Titles: – TitleFull: A 1–12 GHz Ultra‐Wide Band Bidirectional Amplifier Featuring Enhanced Loop Stability. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Diao, Rui – PersonEntity: Name: NameFull: Ai, Yu – PersonEntity: Name: NameFull: Zhang, Tiedi – PersonEntity: Name: NameFull: Fan, Chao IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: Jun2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 08952477 Numbering: – Type: volume Value: 68 – Type: issue Value: 6 Titles: – TitleFull: Microwave & Optical Technology Letters Type: main |
| ResultId | 1 |
