Hybrid Phase Change/Ionic Device Reliability and Variability Under Thermal–Electrostatic Control.
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| Title: | Hybrid Phase Change/Ionic Device Reliability and Variability Under Thermal–Electrostatic Control. |
|---|---|
| Authors: | Bhatnagar, Vikas1 (AUTHOR), Kumar, Adesh1 (AUTHOR) adeshmanav@gmail.com, Bilgaye, Manish H.2 (AUTHOR) |
| Source: | JOM: The Journal of The Minerals, Metals & Materials Society (TMS). Jul2026, Vol. 78 Issue 7, p7062-7079. 18p. |
| Subjects: | Phase change memory, Ionic conductivity, Computer simulation, Phase change materials, Temperature control |
| Abstract: | Conventional phase-change memory (PCM) technologies are constrained by excessive power requirements, resistance instability, and variability across devices. The study presents an electrothermal simulation of a hybrid PCM architecture based on germanium–antimony–tellurium Ge4Sb6Te7 (GST467), in which thermally induced phase transition is coupled with ionic transport, governed by a crystallization temperature threshold. In contrast to the widely adopted Ge2Sb2Te5 (GST225), GST467 offers improved thermal robustness and elevated crystallization temperature, leading to enhanced resistance stability. The hybrid device exhibits autonomous switching behavior resulting from the interplay between temperature-dependent phase-change conduction at higher thermal regimes and electric-field-assisted ionic migration at lower temperatures, enabling the formation of reliable conductive channels. A filament regulation strategy is incorporated to precisely control ion transport, thereby suppressing stochastic filament growth and ensuring stable multilevel resistance operation. Numerical simulations performed using MATLAB R2023b demonstrate nearly a 90.00% suppression in resistance drift and an endurance beyond 108 switching cycles, indicating a substantial improvement over conventional PCM implementations. The electro-ionic model parameters are derived from experimentally reported GST467 and carbon nanotube-based devices, ensuring physical realism and practical applicability. [ABSTRACT FROM AUTHOR] |
| Copyright of JOM: The Journal of The Minerals, Metals & Materials Society (TMS) is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 194996246 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Hybrid Phase Change/Ionic Device Reliability and Variability Under Thermal–Electrostatic Control. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Bhatnagar%2C+Vikas%22">Bhatnagar, Vikas</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kumar%2C+Adesh%22">Kumar, Adesh</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> adeshmanav@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Bilgaye%2C+Manish+H%2E%22">Bilgaye, Manish H.</searchLink><relatesTo>2</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22JOM%3A+The+Journal+of+The+Minerals%2C+Metals+%26+Materials+Society+%28TMS%29%22">JOM: The Journal of The Minerals, Metals & Materials Society (TMS)</searchLink>. Jul2026, Vol. 78 Issue 7, p7062-7079. 18p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Phase+change+memory%22">Phase change memory</searchLink><br /><searchLink fieldCode="DE" term="%22Ionic+conductivity%22">Ionic conductivity</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+simulation%22">Computer simulation</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+change+materials%22">Phase change materials</searchLink><br /><searchLink fieldCode="DE" term="%22Temperature+control%22">Temperature control</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Conventional phase-change memory (PCM) technologies are constrained by excessive power requirements, resistance instability, and variability across devices. The study presents an electrothermal simulation of a hybrid PCM architecture based on germanium–antimony–tellurium Ge4Sb6Te7 (GST467), in which thermally induced phase transition is coupled with ionic transport, governed by a crystallization temperature threshold. In contrast to the widely adopted Ge2Sb2Te5 (GST225), GST467 offers improved thermal robustness and elevated crystallization temperature, leading to enhanced resistance stability. The hybrid device exhibits autonomous switching behavior resulting from the interplay between temperature-dependent phase-change conduction at higher thermal regimes and electric-field-assisted ionic migration at lower temperatures, enabling the formation of reliable conductive channels. A filament regulation strategy is incorporated to precisely control ion transport, thereby suppressing stochastic filament growth and ensuring stable multilevel resistance operation. Numerical simulations performed using MATLAB R2023b demonstrate nearly a 90.00% suppression in resistance drift and an endurance beyond 108 switching cycles, indicating a substantial improvement over conventional PCM implementations. The electro-ionic model parameters are derived from experimentally reported GST467 and carbon nanotube-based devices, ensuring physical realism and practical applicability. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of JOM: The Journal of The Minerals, Metals & Materials Society (TMS) is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11837-026-08425-z Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 18 StartPage: 7062 Subjects: – SubjectFull: Phase change memory Type: general – SubjectFull: Ionic conductivity Type: general – SubjectFull: Computer simulation Type: general – SubjectFull: Phase change materials Type: general – SubjectFull: Temperature control Type: general Titles: – TitleFull: Hybrid Phase Change/Ionic Device Reliability and Variability Under Thermal–Electrostatic Control. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Bhatnagar, Vikas – PersonEntity: Name: NameFull: Kumar, Adesh – PersonEntity: Name: NameFull: Bilgaye, Manish H. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: Jul2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 10474838 Numbering: – Type: volume Value: 78 – Type: issue Value: 7 Titles: – TitleFull: JOM: The Journal of The Minerals, Metals & Materials Society (TMS) Type: main |
| ResultId | 1 |
