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Catalyst-free growth of graphene on Si substrate using reactive pulsed sputtering.

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Title: Catalyst-free growth of graphene on Si substrate using reactive pulsed sputtering.
Authors: Oishi, Yuto1 (AUTHOR), Iwata, Akihiro2 (AUTHOR), Shinohara, Masanori2 (AUTHOR) sinohara@fukuoka-u.ac.jp, Maeda, Fumihiko3 (AUTHOR), Matsumoto, Takashi4 (AUTHOR)
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Jul2026, Vol. 44 Issue 4, p1-8. 8p.
Subjects: Graphene, Reactive sputtering, Substrates (Materials science), Carbon nanomaterials, Carbon-based materials
Abstract: Reactive pulsed plasma sputtering was used to grow graphene directly (i.e., without catalysts) on a Si substrate. Graphene layers and carbon nanowalls were grown at 600 and 800 °C, respectively. Hydrocarbon with sp3-hydrocarbon components, including CHX (X = 1–3), may be the film growth precursors. The amount of precursor supplied by the plasma, which, in turn, governs graphene formation, depends on the target current, as this parameter determines the discharge current. Graphene formation is also attributed to the substrate temperature. Finally, growth time can influence the number of graphene layers, facilitating the growth of few-layer or multilayer graphene. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 195070410
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Catalyst-free growth of graphene on Si substrate using reactive pulsed sputtering.
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  Data: <searchLink fieldCode="AR" term="%22Oishi%2C+Yuto%22">Oishi, Yuto</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Iwata%2C+Akihiro%22">Iwata, Akihiro</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Shinohara%2C+Masanori%22">Shinohara, Masanori</searchLink><relatesTo>2</relatesTo> (AUTHOR)<i> sinohara@fukuoka-u.ac.jp</i><br /><searchLink fieldCode="AR" term="%22Maeda%2C+Fumihiko%22">Maeda, Fumihiko</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Matsumoto%2C+Takashi%22">Matsumoto, Takashi</searchLink><relatesTo>4</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+A-Vacuums%2C+Surfaces+%26+Films%22">Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films</searchLink>. Jul2026, Vol. 44 Issue 4, p1-8. 8p.
– Name: Subject
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  Data: <searchLink fieldCode="DE" term="%22Graphene%22">Graphene</searchLink><br /><searchLink fieldCode="DE" term="%22Reactive+sputtering%22">Reactive sputtering</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Carbon+nanomaterials%22">Carbon nanomaterials</searchLink><br /><searchLink fieldCode="DE" term="%22Carbon-based+materials%22">Carbon-based materials</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Reactive pulsed plasma sputtering was used to grow graphene directly (i.e., without catalysts) on a Si substrate. Graphene layers and carbon nanowalls were grown at 600 and 800 °C, respectively. Hydrocarbon with sp3-hydrocarbon components, including CHX (X = 1–3), may be the film growth precursors. The amount of precursor supplied by the plasma, which, in turn, governs graphene formation, depends on the target current, as this parameter determines the discharge current. Graphene formation is also attributed to the substrate temperature. Finally, growth time can influence the number of graphene layers, facilitating the growth of few-layer or multilayer graphene. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1116/6.0005380
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 8
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    Subjects:
      – SubjectFull: Graphene
        Type: general
      – SubjectFull: Reactive sputtering
        Type: general
      – SubjectFull: Substrates (Materials science)
        Type: general
      – SubjectFull: Carbon nanomaterials
        Type: general
      – SubjectFull: Carbon-based materials
        Type: general
    Titles:
      – TitleFull: Catalyst-free growth of graphene on Si substrate using reactive pulsed sputtering.
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            NameFull: Oishi, Yuto
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            NameFull: Iwata, Akihiro
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            NameFull: Shinohara, Masanori
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            NameFull: Maeda, Fumihiko
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            NameFull: Matsumoto, Takashi
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            – D: 01
              M: 07
              Text: Jul2026
              Type: published
              Y: 2026
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              Value: 44
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            – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
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