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Two-dimensional 1T-HfSe2: Surface structure and air stability.

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Title: Two-dimensional 1T-HfSe2: Surface structure and air stability.
Authors: Smyth, Christopher M.1,2 (AUTHOR), Zhu, Hui1 (AUTHOR), Guo, Zaibing3 (AUTHOR), Lee, Joy S.1 (AUTHOR), Oviedo, Juan Pablo1 (AUTHOR), Wang, Jian1 (AUTHOR), Hsu, Julia W. P.1 (AUTHOR), Alshareef, Husam N.4 (AUTHOR), Kim, Moon J.1 (AUTHOR), Kim, Jiyoung1 (AUTHOR), Wallace, Robert M.1 (AUTHOR), Addou, Rafik1 (AUTHOR) addou@utdallas.edu
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Jul2026, Vol. 44 Issue 4, p1-9. 9p.
Subjects: Surface structure, Surface stability, Scanning tunneling microscopy, Semiconductor thin films, Electronic materials, Photoelectron spectroscopy, Oxidation
Abstract: The two-dimensional semiconductor HfSe2 is a promising candidate for future electronic, optical, and sensing applications due to its moderate bandgap (∼1.1 eV) and the spontaneous formation of a native high-κ dielectric in ambient conditions. In this study, a range of experimental techniques was employed to investigate the intrinsic surface properties of bulk HfSe2 grown by chemical vapor transport and to directly track oxidation in air. Scanning tunneling microscopy reveals a high defect density across the HfSe2 surface caused by Se vacancies and impurities, confirmed by XPS, inductively coupled plasma mass spectrometry, and high-resolution Rutherford backscattering spectrometry. Furthermore, XPS highlights the highly reactive nature of the HfSe2 surface in air, where the formation of HfOx is detected after a 1 min exposure to air, resulting in changes to the electronic properties, such as the work function and the valence band offset. Understanding the intrinsic surface properties, air stability, and material quality will facilitate the integration of 1T-HfSe2 in novel devices. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 195070412
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Two-dimensional 1T-HfSe<subscript>2</subscript>: Surface structure and air stability.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Smyth%2C+Christopher+M%2E%22">Smyth, Christopher M.</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zhu%2C+Hui%22">Zhu, Hui</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Guo%2C+Zaibing%22">Guo, Zaibing</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lee%2C+Joy+S%2E%22">Lee, Joy S.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Oviedo%2C+Juan+Pablo%22">Oviedo, Juan Pablo</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wang%2C+Jian%22">Wang, Jian</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hsu%2C+Julia+W%2E+P%2E%22">Hsu, Julia W. P.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Alshareef%2C+Husam+N%2E%22">Alshareef, Husam N.</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kim%2C+Moon+J%2E%22">Kim, Moon J.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kim%2C+Jiyoung%22">Kim, Jiyoung</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Wallace%2C+Robert+M%2E%22">Wallace, Robert M.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Addou%2C+Rafik%22">Addou, Rafik</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> addou@utdallas.edu</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+A-Vacuums%2C+Surfaces+%26+Films%22">Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films</searchLink>. Jul2026, Vol. 44 Issue 4, p1-9. 9p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Surface+structure%22">Surface structure</searchLink><br /><searchLink fieldCode="DE" term="%22Surface+stability%22">Surface stability</searchLink><br /><searchLink fieldCode="DE" term="%22Scanning+tunneling+microscopy%22">Scanning tunneling microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+thin+films%22">Semiconductor thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Electronic+materials%22">Electronic materials</searchLink><br /><searchLink fieldCode="DE" term="%22Photoelectron+spectroscopy%22">Photoelectron spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Oxidation%22">Oxidation</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The two-dimensional semiconductor HfSe2 is a promising candidate for future electronic, optical, and sensing applications due to its moderate bandgap (∼1.1 eV) and the spontaneous formation of a native high-κ dielectric in ambient conditions. In this study, a range of experimental techniques was employed to investigate the intrinsic surface properties of bulk HfSe2 grown by chemical vapor transport and to directly track oxidation in air. Scanning tunneling microscopy reveals a high defect density across the HfSe2 surface caused by Se vacancies and impurities, confirmed by XPS, inductively coupled plasma mass spectrometry, and high-resolution Rutherford backscattering spectrometry. Furthermore, XPS highlights the highly reactive nature of the HfSe2 surface in air, where the formation of HfOx is detected after a 1 min exposure to air, resulting in changes to the electronic properties, such as the work function and the valence band offset. Understanding the intrinsic surface properties, air stability, and material quality will facilitate the integration of 1T-HfSe2 in novel devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1116/6.0005434
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 9
        StartPage: 1
    Subjects:
      – SubjectFull: Surface structure
        Type: general
      – SubjectFull: Surface stability
        Type: general
      – SubjectFull: Scanning tunneling microscopy
        Type: general
      – SubjectFull: Semiconductor thin films
        Type: general
      – SubjectFull: Electronic materials
        Type: general
      – SubjectFull: Photoelectron spectroscopy
        Type: general
      – SubjectFull: Oxidation
        Type: general
    Titles:
      – TitleFull: Two-dimensional 1T-HfSe2: Surface structure and air stability.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Smyth, Christopher M.
      – PersonEntity:
          Name:
            NameFull: Zhu, Hui
      – PersonEntity:
          Name:
            NameFull: Guo, Zaibing
      – PersonEntity:
          Name:
            NameFull: Lee, Joy S.
      – PersonEntity:
          Name:
            NameFull: Oviedo, Juan Pablo
      – PersonEntity:
          Name:
            NameFull: Wang, Jian
      – PersonEntity:
          Name:
            NameFull: Hsu, Julia W. P.
      – PersonEntity:
          Name:
            NameFull: Alshareef, Husam N.
      – PersonEntity:
          Name:
            NameFull: Kim, Moon J.
      – PersonEntity:
          Name:
            NameFull: Kim, Jiyoung
      – PersonEntity:
          Name:
            NameFull: Wallace, Robert M.
      – PersonEntity:
          Name:
            NameFull: Addou, Rafik
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 07
              Text: Jul2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 07342101
          Numbering:
            – Type: volume
              Value: 44
            – Type: issue
              Value: 4
          Titles:
            – TitleFull: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
              Type: main
ResultId 1