Physics-Constrained Transfer-Matrix Optimization of Diffused Regions in Bifacial p + – n – n + Crystalline-Silicon Solar Cells.
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| Title: | Physics-Constrained Transfer-Matrix Optimization of Diffused Regions in Bifacial p + – n – n + Crystalline-Silicon Solar Cells. |
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| Authors: | Ferrada, Pablo1,2 (AUTHOR) pdferrada@uloyola.es, Portillo, Carlos2,3 (AUTHOR) |
| Source: | Nanomaterials (2079-4991). Sep2026, Vol. 16 Issue 18, p1187. 27p. |
| Subjects: | Transfer matrix, Constrained optimization, Charge carrier mobility, Solar cells, Diffusion measurements, Global optimization, Silicon crystals |
| Abstract: | Physics-based models are useful for the analysis and optimization of crystalline-silicon solar cells when many device designs must be evaluated. This paper presents a compact transfer-matrix framework for one-dimensional carrier transport and physics-constrained optimization in bifacial p + –n– n + crystalline-silicon solar cells under front-side illumination. The model includes a distributed optical generation profile, explicit emitter, base, and rear-field regions, surface recombination, doping-dependent mobility, Auger recombination, band-gap narrowing, sheet and contact resistances, and external series and shunt losses. The front and rear dopant distributions are described by complementary-error-function profiles, so their junction depths follow from the diffusion parameters and base concentration instead of being independent optimization variables. The solver is verified in limiting transport conditions and with tabulated generation data. The complete model is then calibrated against the reported photovoltaic figures of merit of an experimental bifacial n-type passivated-emitter and rear-totally-diffused (n-PERT) solar cell, which serves as the reference device and is subsequently applied to global optimization. The calibration reproduces a short-circuit current density of J s c = 39.20 mA / cm 2 , an open-circuit voltage of V o c = 653.1 mV , a fill factor of 0.783, and an efficiency of 20.05%. For the 180 µm reference geometry, the optimized design reaches an efficiency of 20.63%. Independent optimizations for wafer thicknesses of 160, 180, and 200 µm produce a consistent family of solutions with efficiency gains of approximately 0.56–0.60 percentage points. These gains result from the higher open-circuit voltage and fill factor despite a moderate reduction in short-circuit current density, while the optimized total series resistance remains nearly constant. The framework provides a physically interpretable method for combining carrier-transport modeling, experimental calibration, inverse design, and repeated global optimization. [ABSTRACT FROM AUTHOR] |
| Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
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| Items | – Name: Title Label: Title Group: Ti Data: Physics-Constrained Transfer-Matrix Optimization of Diffused Regions in Bifacial p + – n – n + Crystalline-Silicon Solar Cells. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Ferrada%2C+Pablo%22">Ferrada, Pablo</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> pdferrada@uloyola.es</i><br /><searchLink fieldCode="AR" term="%22Portillo%2C+Carlos%22">Portillo, Carlos</searchLink><relatesTo>2,3</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nanomaterials+%282079-4991%29%22">Nanomaterials (2079-4991)</searchLink>. Sep2026, Vol. 16 Issue 18, p1187. 27p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Transfer+matrix%22">Transfer matrix</searchLink><br /><searchLink fieldCode="DE" term="%22Constrained+optimization%22">Constrained optimization</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+carrier+mobility%22">Charge carrier mobility</searchLink><br /><searchLink fieldCode="DE" term="%22Solar+cells%22">Solar cells</searchLink><br /><searchLink fieldCode="DE" term="%22Diffusion+measurements%22">Diffusion measurements</searchLink><br /><searchLink fieldCode="DE" term="%22Global+optimization%22">Global optimization</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+crystals%22">Silicon crystals</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Physics-based models are useful for the analysis and optimization of crystalline-silicon solar cells when many device designs must be evaluated. This paper presents a compact transfer-matrix framework for one-dimensional carrier transport and physics-constrained optimization in bifacial p + –n– n + crystalline-silicon solar cells under front-side illumination. The model includes a distributed optical generation profile, explicit emitter, base, and rear-field regions, surface recombination, doping-dependent mobility, Auger recombination, band-gap narrowing, sheet and contact resistances, and external series and shunt losses. The front and rear dopant distributions are described by complementary-error-function profiles, so their junction depths follow from the diffusion parameters and base concentration instead of being independent optimization variables. The solver is verified in limiting transport conditions and with tabulated generation data. The complete model is then calibrated against the reported photovoltaic figures of merit of an experimental bifacial n-type passivated-emitter and rear-totally-diffused (n-PERT) solar cell, which serves as the reference device and is subsequently applied to global optimization. The calibration reproduces a short-circuit current density of J s c = 39.20 mA / cm 2 , an open-circuit voltage of V o c = 653.1 mV , a fill factor of 0.783, and an efficiency of 20.05%. For the 180 µm reference geometry, the optimized design reaches an efficiency of 20.63%. Independent optimizations for wafer thicknesses of 160, 180, and 200 µm produce a consistent family of solutions with efficiency gains of approximately 0.56–0.60 percentage points. These gains result from the higher open-circuit voltage and fill factor despite a moderate reduction in short-circuit current density, while the optimized total series resistance remains nearly constant. The framework provides a physically interpretable method for combining carrier-transport modeling, experimental calibration, inverse design, and repeated global optimization. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Nanomaterials (2079-4991) is the property of MDPI and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/nano16181187 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 27 StartPage: 1187 Subjects: – SubjectFull: Transfer matrix Type: general – SubjectFull: Constrained optimization Type: general – SubjectFull: Charge carrier mobility Type: general – SubjectFull: Solar cells Type: general – SubjectFull: Diffusion measurements Type: general – SubjectFull: Global optimization Type: general – SubjectFull: Silicon crystals Type: general Titles: – TitleFull: Physics-Constrained Transfer-Matrix Optimization of Diffused Regions in Bifacial p + – n – n + Crystalline-Silicon Solar Cells. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Ferrada, Pablo – PersonEntity: Name: NameFull: Portillo, Carlos IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 09 Text: Sep2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 20794991 Numbering: – Type: volume Value: 16 – Type: issue Value: 18 Titles: – TitleFull: Nanomaterials (2079-4991) Type: main |
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